N-CHANNEL MOSFET. DMTH10H010SCT Datasheet

DMTH10H010SCT MOSFET. Datasheet pdf. Equivalent

DMTH10H010SCT Datasheet
Recommendation DMTH10H010SCT Datasheet
Part DMTH10H010SCT
Description N-CHANNEL MOSFET
Feature DMTH10H010SCT; Green DMTH10H010SCT 100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RD.
Manufacture DIODES
Datasheet
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DIODES DMTH10H010SCT
Green
DMTH10H010SCT
100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
100V
RDS(ON)
9.5m@VGS = 10V
Package
TO220AB
ID
TC = +25°C
100A
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high-efficiency power management
applications.
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Features
Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: TO220AB
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
TO220AB
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMTH10H010SCT
Case
TO220AB
Packaging
50 Pieces/Tube
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free Greenproducts are defined as those which contain <900ppm bromine, <900ppm chlorine 1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
H10H010S
YYWW
= Manufacturer’s Marking
H10H010S = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 18 = 2018)
WW or WW = Week Code (01 to 53)
DMTH10H010SCT
Document number: DS39681 Rev. 3 - 2
1 of 7
www.diodes.com
July 2018
© Diodes Incorporated



DIODES DMTH10H010SCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current
Maximum Continuous Body Diode Forward Current
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.3mH (Note 7)
Avalanche Energy, L = 0.3mH (Note 7)
TC = +25°C
TC = +100°C
TC = +25°C
Symbol
VDSS
VGSS
ID
IS
IDM
ISM
IAS
EAS
DMTH10H010SCT
Value
Unit
100
V
±20
V
100
80
A
90
A
400
A
400
A
33.7
A
170
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.5
60
187
0.8
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min
BVDSS
100
IDSS
IGSS
VGS(TH)
2
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Typ
7.4
0.8
4468
746
31.6
0.9
56.4
15.4
14.0
18.6
22.5
44.8
29.5
54.5
106.4
Max
1
±100
4
9.5
1.3
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V
VGS = 0V, ID = 1mA
µA VDS = 80V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V
VDS = VGS, ID = 250µA
mVGS = 10V, ID = 13A
V
VGS = 0V, IS = 13A
pF
VDS = 50V, VGS = 0V
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nCVDD = 50V, ID = 13A,
VGS = 10V
ns
VDD = 50V, VGS = 10V,
ID = 13A, Rg = 6
ns
nC IF = 13A, di/dt = 100A/µs
DMTH10H010SCT
Document number: DS39681 Rev. 3 - 2
2 of 7
www.diodes.com
July 2018
© Diodes Incorporated



DIODES DMTH10H010SCT
DMTH10H010SCT
30.0
25.0
20.0
15.0
VGS=5.0V
VGS = 6.0V
VGS = 10.0V
VGS = 4.5V
10.0
5.0
0.0
0
0.0090
VGS = 4.0V
VGS = 3.5V
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.0085
0.0080
0.0075
0.0070
0.0065
VGS = 10V
0.0060
0.0055
0
5
10
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
30
VDS = 5.0V
25
20
15
10
5
0
2
0.03
150
175
125
85
25
-55
2.5 3 3.5 4 4.5 5 5.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.025
0.02
0.015
0.01
0.005
ID = 13A
0
0
4
8
12
16
20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
0.018
0.016
0.014
175
150
VGS = 10V
0.012
0.01
0.008
0.006
125
85
25
0.004
-55
0.002
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
2.2
2
1.8
1.6
1.4
1.2
1
0.8
VGS = 10V, ID = 13A
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMTH10H010SCT
Document number: DS39681 Rev. 3 - 2
3 of 7
www.diodes.com
July 2018
© Diodes Incorporated





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