FCB110N65F

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 650 V ±20 V ID Drain Current-Continuous 35 A IDM Drain Current-Single Pluse 105 A PD Total Dissipation @TC=25℃ 357 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.35 ℃/W FCB110N65F isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 3.5mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 17.5A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 650V; VGS= 0 VSD Forward On-Voltage IS= 17.5A; VGS= 0 FCB110N65F MIN MAX UNIT 650 V 3.0 5.0 V 110 mΩ ±100 nA 10 μA 1.4 V NOTICE： ISC reserves the rights to make changes of t...