isc N-Channel MOSFET Transistor
FKV660S
FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Mi...
isc N-Channel MOSFET
Transistor
FKV660S
FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 14mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
60
A
IDM
Drain Current-Single Pluse
180
A
PD
Total Dissipation @TC=25℃
60
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 2.08 ℃/W
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 25A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 60V; VGS= 0
VSD
Forward On-Voltage
IS= 50A; VGS= 0
FKV660S
MIN MAX UNIT
60
V
1.0
2.5
V
14
mΩ
±10
uA
100
μA
1.5
V
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