isc N-Channel MOSFET Transistor
ISP80N08S2L
FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage-
VDSS= 75V(...
isc N-Channel MOSFET
Transistor
ISP80N08S2L
FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage-
VDSS= 75V(Min) ·Static Drain-Source On-Resistance
RDS(on) :7.1mΩ(Max) ·175°C operating temperature ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
75
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
80
A
IDM
Drain Current-Single Pluse
280
A
PD
Total Dissipation @TC=25℃
300
W
TJ
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.5
℃/W
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1.0mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 80A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 75V; VGS= 0
VSD
Forward On-Voltage
IS= 80A; VGS= 0
ISP80N08S2L
MIN MAX UNIT
75
V
1.0
2.5
V
7.1
mΩ
±100 nA
1.0
μA
1.3
V
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