Triac. T635T-8FP Datasheet

T635T-8FP Triac. Datasheet pdf. Equivalent

T635T-8FP Datasheet
Recommendation T635T-8FP Datasheet
Part T635T-8FP
Description Triac
Feature T635T-8FP; A2 G A1 G A2 A1 TO-220FPAB (T635T-8FP) Table 1. Device summary Symbol Value Unit IT(rms) 6 A.
Manufacture STMicroelectronics
Datasheet
Download T635T-8FP Datasheet





STMicroelectronics T635T-8FP
A2
G
A1
G
A2
A1
TO-220FPAB
(T635T-8FP)
Table 1. Device summary
Symbol
Value
Unit
IT(rms)
6
A
VDRM, VRRM
800
V
VDSM, VRSM
900
V
IGT
35
mA
T635T-8FP
6 A Snubberless™ Triac
Datasheet production data
Features
Medium current Triac
High static and dynamic commutation
Three quadrants
ECOPACK®2 compliant component
Complies with UL standards (File ref: E81734)
Applications
General purpose AC line load switching
Motor control circuits
Small home appliances
Lighting
Inrush current limiting circuits
Overvoltage crowbar protection
Description
Available in through-hole full pack package, the
T635T-8FP Triac can be used for the on/off or
phase angle control function in general purpose
AC switching where high commutation capability
is required. This device can be used without a
snubber circuit when the limits defined in this
datasheet are respected.
Provides UL certified insulation rated at 2 kV.
January 2015
This is information on a product in full production.
TM: Snubberless is a trademark of STMicroelectronics
DocID024247 Rev 2
1/9
www.st.com
9



STMicroelectronics T635T-8FP
Characteristics
1
Characteristics
T635T-8FP
Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)
Symbol
Parameter
Value
Unit
IT(rms)
ITSM
I²t
VDRM,
VRRM
VDSM,
VRSM
dI/dt
IGM
PG(AV)
Tstg
Tj
TL
Vins
On-state rms current (full sine wave)
Tc = 117 °C
6
A
Non repetitive surge peak on-state F = 50 Hz t = 20 ms
45
current (full cycle, Tj initial = 25 °C) F = 60 Hz t = 16.7 ms
47
A
I²t value for fusing, Tj initial = 25 °C
tp = 10 ms
13
A²s
Repetitive surge peak off-state voltage
Tj = 150 °C
600
V
Tj = 125 °C
800
Non repetitive surge peak off-state voltage
tp = 10 ms
900
V
Critical rate of rise of on-state
current IG = 2 x IGT, tr 100 ns
F = 100 Hz
Peak gate current
tp = 20 µs Tj = 150 °C
Average gate power dissipation
Tj = 150 °C
Storage junction temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s
Insulation rms voltage, 1 minute
100
4
1
- 40 to + 150
- 40 to + 150
260
2
A/µs
A
W
°C
°C
kV
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)
Symbol
Test conditions
Quadrant
Value
Unit
IGT (1) VD = 12 V, RL = 30 Ω
VGT
VGD
IH (1)
VD = 12 V, RL = 30 Ω
VD = VDRM, RL = 3.3 kΩ, Tj = 150 °C
IT = 500 mA
IL
IG = 1.2 IGT
dV/dt (1)
VD = 536 V, gate open
VD = 402 V, gate open
(dI/dt)c (1) Without snubber (dV/dt)c 20 V/µs)
1. For both polarities of A2 referenced to A1
I - II - III
Min.
Max.
I - II - III
Max.
I - II - III
Min.
Max.
I - III
Max.
II
Max.
Tj = 125 °C
Min.
Tj = 150 °C
Tj = 125 °C
Min.
Tj = 150 °C
1.75
35
1.3
0.2
40
60
65
2000
1000
6
3
mA
V
V
mA
mA
mA
V/µs
V/µs
A/ms
2/9
DocID024247 Rev 2



STMicroelectronics T635T-8FP
T635T-8FP
Characteristics
Table 4. Static characteristics
Symbol
Test conditions
VT (1)
Vt0 (1)
Rd (1)
ITM = 8.5 A, tp = 380 µs
Threshold voltage
Dynamic resistance
IDRM
IRRM
VDRM = VRRM = 800 V
VDRM = VRRM = 600 V
1. For both polarities of A2 referenced to A1
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
Symbol
Rth(j-c)
Rth(j-a)
Junction to case (AC)
Junction to ambient
Table 5. Thermal resistance
Parameter
Max.
Max.
Max.
Max.
Max.
Value
Unit
1.55
V
0.85
V
75
mΩ
5
µA
0.6
mA
2.0
Value
4.5
60
Unit
°C/W
°C/W
Figure 1. Maximum power dissipation versus
on-state rms current (full cycle)
8 P(W)
α =180
6
4
2
180°
IT(RMS)(A)
0
0
1
2
3
4
5
6
Figure 2. On-state rms current versus case
temperature (full cycle)
7 IT(RMS)(A)
6
α =180°
5
4
3
2
1
TC(°C)
0
0
25
50
75
100
125
150
Figure 3. On-state rms current versus ambient
temperature (free air convection)
3.0 IT(RMS)(A)
2.5
α = 180°
2.0
Figure 4. Relative variation of thermal
impedance versus pulse duration
1.0E+00 K = [Zth / Rth]
Zth(j-c)
Zth(j-a)
1.5
1.0E-01
1.0
0.5
0.0
0
Ta(°C)
tp (s)
1.0E-02
25
50
75
100
125
150
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
DocID024247 Rev 2
3/9





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)