N-channel IGBT. DGU4020GR Datasheet

DGU4020GR IGBT. Datasheet pdf. Equivalent

DGU4020GR Datasheet
Recommendation DGU4020GR Datasheet
Part DGU4020GR
Description N-channel IGBT
Feature DGU4020GR; VBR(CES) = 400 V, IC = 20 A N-channel Ignition IGBT DGU4020GR Data Sheet Description The DGU4020GR.
Manufacture Sanken
Datasheet
Download DGU4020GR Datasheet





Sanken DGU4020GR
VBR(CES) = 400 V, IC = 20 A
N-channel Ignition IGBT
DGU4020GR
Data Sheet
Description
The DGU4020GR is 400 V IGBT with Zener diodes
and gate resistors, and achieves an ignition coil drive
circuit without an external clamped circuit. The IGBT
has low saturation characteristic, and can improve the
efficiency of the circuit.
Features
AEC-Q101 Qualified
Bare Lead Frame: Pb-free (RoHS Compliant)
Built-in Zener Diodes
Built-in Gate Resistors
Low Saturation Voltage
Packages
TO252-2L
V(BR)CES ----------------------------------------------- 400 V
IC -------------------------------------------------------- 20 A
VCE(SAT) ------------ 1.10 V typ. (VGE = 4.5 V, IC = 10 A)
(1)
Applications
Ignition Coil Driver Circuits
(4)
(1) (2) (3)
(2)(4)
(1) Gate
(2) Collector
(3) Emitter
(4) Collector
(3)
Not to scale
DGU4020GR-DSE Rev.1.3
SANKEN ELECTRIC CO., LTD.
1
Mar. 15, 2021
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2018



Sanken DGU4020GR
DGU4020GR
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Conditions
Rating
Unit
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Continuous Collector Current
VCE
VGE
IC
TC = 25 °C
V(BR)CES
V
±10
V
20
A
Power Dissipation
PD
TC = 25 °C
172
W
Self-clamped Inductive Switching
Energy
ESCIS
See エラー! 参照
元が見つかりま
320
mJ
せん。Figure 1 and
Equation (1)
ラー! 参照元が
Self-clamped Inductive Switching
Current
ISCIS
見つかりません。.
VCC = 14 V,
20
A
VGE = 5 V,
L = 1.6 mH,
RG = 1
Reverse Avalanche Energy
EAS(R)
L = 6 mH
2000
mJ
Operating Junction Temperature
TJ
40 to 175
°C
Storage Temperature
TSTG
40 to 175
°C
Conditions:
RG = 1 kΩ
L
VCE
L = 1.6 mH
VCE
VCC
RG
VCC
IC
IC
VGE
DUT
ISCIS
(I G BT )
(a) Test Circuit
(b) Waveform
Figure 1. Self-clamped Inductive Switching Energy Test
V(BR)CES
t
t
ESCIS
=
1
2
×
L
×
ISCIS2
×
V(BR)CES
V(BR)CES − VCC
(1)
DGU4020GR-DSE Rev.1.3
SANKEN ELECTRIC CO., LTD.
2
Mar. 15, 2021
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2018



Sanken DGU4020GR
DGU4020GR
Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Collector-to-Emitter Breakdown
Voltage
V(BR)CES
Gate-to-Emitter Breakdown Voltage V(BR)GES
Collector-to-Emitter Leakage Current
ICES
Emitter-to-Collector Leakage Current
IECS
Gate-to-Emitter Leakage Current
IGES
Gate Threshold Voltage
VGE(TH)
Collector-to-Emitter Saturation
Voltage
VCE(SAT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Internal Series Gate Resistor (1)
Internal Gate-to-Emitter Resistor (1)
Cies
Coes
Cres
td(ON)
tr
td(OFF)
tf
RG(INT)
RGE(INT)
Conditions
IC = 2 mA, VGE = 0 V
IG = ±1 mA, VCE = 0 V
VCE = 300 V, VGE = 0 V
VEC = 24 V
VGE = ±5 V
VCE = 10 V, IC = 1 mA
TJ = 25 °C
TJ = 150 °C
VGE = 3.5 V,
IC = 10 A
VGE = 4.5 V,
IC = 10 A
VGE = 4.5 V,
IC = 15 A
VGE = 4.5 V,
IC = 20 A
VGE = 3.5 V,
IC = 10 A
VGE = 4.5 V,
IC = 10 A
VGE = 4.5 V,
IC = 15 A
VGE = 4.5 V,
IC = 20 A
VCE = 10 V,
VGE = 0 V,
f = 1.0 MHz
Resistive load,
see Figure 3
Inductive load,
see Figure 4
TJ = −40 to 175 °C
Min. Typ. Max. Unit
375 400 425
V
±10.0 ±11.5 ±13.0 V
100 µA
1.0 mA
±89 ±106 ±132 µA
1.40 1.75 2.10
V
1.16 1.39
V
1.10 1.32
V
1.25 1.50
V
1.39 1.67
V
1.15 1.50
V
1.08 1.40
V
1.31 1.77
V
1.58 2.13
V
1900
pF
460
pF
160
pF
1.3
µs
3.8
µs
13.5
µs
2.7
µs
70
Ω
37.6 47.0 61.1(2)
(2)(4)
RG(INT)
(1)
RGE(INT)
(3)
Figure 2. Internal Gate Resistor
(1) See Figure 2.
(2) Guaranteed by design.
DGU4020GR-DSE Rev.1.3
SANKEN ELECTRIC CO., LTD.
3
Mar. 15, 2021
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2018





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