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SJPM-H4 Dataheets PDF



Part Number SJPM-H4
Manufacturers Sanken
Logo Sanken
Description General-purpose Rectifier Diode
Datasheet SJPM-H4 DatasheetSJPM-H4 Datasheet (PDF)

VRSM = 400 V, IF(AV) = 2.0 A General-purpose Rectifier Diode SJPM-H4 Data Sheet Description The SJPM-H4 is a 400 V, 2.0 A general-purpose rectifier diode with low loss characteristics. This rectifier diode is for a commercial power supply. Features ● VRSM -------------------------------------------------- 400 V ● IF(AV)---------------------------------------------------- 2.0 A ● VF (IF = 2.0 A) --------------------------------- 0.94 V typ. ● Bare Lead Frame: Pb-free (RoHS Compliant) ● Flammabi.

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VRSM = 400 V, IF(AV) = 2.0 A General-purpose Rectifier Diode SJPM-H4 Data Sheet Description The SJPM-H4 is a 400 V, 2.0 A general-purpose rectifier diode with low loss characteristics. This rectifier diode is for a commercial power supply. Features ● VRSM -------------------------------------------------- 400 V ● IF(AV)---------------------------------------------------- 2.0 A ● VF (IF = 2.0 A) --------------------------------- 0.94 V typ. ● Bare Lead Frame: Pb-free (RoHS Compliant) ● Flammability: Equivalent to UL94V-0 ● Suitable for High Reliability and Automotive Requirement Applications ● Rectification Circuit ● Reverse Battery Protection Circuit Package SJP (1) (1) Cathode Mark (2) (2) (1) Cathode (2) Anode Not to scale SJPM-H4-DSE Rev.1.3 SANKEN ELECTRIC CO., LTD. 1 Mar. 09, 2021 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2008 SJPM-H4 Absolute Maximum Ratings Unless otherwise specified, TA = 25 °C. Parameter Symbol Conditions Rating Unit Nonrepetitive Peak Reverse Voltage VRSM 400 V Repetitive Peak Reverse Voltage VRM 400 V Average Forward Current IF(AV) See Figure 2 and Figure 3 2.0 A Surge Forward Current IFSM Half cycle sine wave, positive side, 10 ms, 1 shot 45 A I2t Limiting Value I2t 1 ms ≤ t ≤ 10ms 10.1 A2s Junction Temperature TJ − 40 to 150 °C Storage Temperature TSTG − 40 to 150 °C Electrical Characteristics Unless otherwise specified, TA = 25 °C. Parameter Symbol Conditions Forward Voltage Drop VF IF = 2.0 A Reverse Leakage Current Reverse Leakage Current under High Temperature Thermal Resistance(1) IR H∙IR Rth(J-L) VR = VRM VR = VRM, TJ = 150 °C Min. Typ. Max. Unit — 0.94 1.10 V — — 10 µA — — 50 µA — — 20 °C/W Mechanical Characteristics Parameter Package Weight Conditions TL Device TA Min. Typ. Max. Unit ― 0.072 ― g 1.6 mm 2 mm Copper Area 25 mm 2 mm 2 mm Substrate 25 mm Figure 1. Lead Temperature Measurement Conditions (1) Rth (J-L) is thermal resistance between junction and lead. Lead temperature (TL) is measured near the root of pin (see Figure 1). SJPM-H4-DSE Rev.1.3 SANKEN ELECTRIC CO., LTD. 2 Mar. 09, 2021 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2008 Average Forward Current, IF(AV) (A) Average Forward Current, IF(AV) (A) SJPM-H4 Derating Curves 2.0 DC t/T = 1/2 1.5 t/T = 1/3, sine wave 1.0 t/T = 1/6 0.5 t T 0.0 50 75 100 125 150 Lead Temperature, TL (°C) Figure 2. IF(AV) vs. TL (TJ = 150 °C, VR = 0 V) 2.0 DC t/T = 1/2 1.5 t/T = 1/3, sine wave 1.0 t/T = 1/6 0.5 t T 0.0 50 75 100 125 150 Lead Temperature, TL (°C) Figure 3. IF(AV) vs. TL (TJ = 150 °C, VR = 400 V) SJPM-H4-DSE Rev.1.3 SANKEN ELECTRIC CO., LTD. 3 Mar. 09, 2021 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2008 Maximum Forward Power Dissipation, PF(MAX) (W) SJPM-H4 Characteristic Curves 3.0 t T 2.0 t/T = 1/6 t/T = 1/3, sine wave 1.0 t/T = 1/2 DC 0.0 0.0 0.5 1.0 1.5 2.0 Average Forward Current, IF(AV) (A) Figure 4. PF(MAX) vs. IF(AV) (TJ = 150 °C) 10 Forward Current, IF (A) 1 TJ = 150 °C 0.1 TJ = 100 °C 0.01 TJ = 25 °C 0.001 0.0 0.5 1.0 1.5 Forward Voltage Drop, VF (V) Figure 6. Typical Characteristics: IF vs. VF Reverse Leakage Current, IR (A) Maximum Reverse Power Dissipation, PR(MAX) (W) 0.02 t T 0.015 1−t/T = 5/6 0.01 0.005 1−t/T = 2/3 1−t/T = 1/2 Sine wave 0 0 100 200 300 400 Reverse Voltage, VR (V) Figure 5. PR(MAX) vs. VR (TJ = 150 °C) 1.E-05 1.E-06 1.E-07 TJ = 150 °C 1.E-08 1.E-09 TJ = 100 °C TJ = 25 °C 1.E-10 0 100 200 300 400 Reverse Voltage, VR (V) Figure 7. Typical Characteristics: IR vs. VR SJPM-H4-DSE Rev.1.3 SANKEN ELECTRIC CO., LTD. 4 Mar. 09, 2021 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2008 SJPM-H4 1000 100 10 Rth(J-A) Rth(J-L) Thermal Resistance (°C/W) 1 0.1 10m 100m 1 10 Pulse Width (s) 100 1000 Figure 8. Typical Transient Thermal Resistance Characteristics SJPM-H4-DSE Rev.1.3 SANKEN ELECTRIC CO., LTD. 5 Mar. 09, 2021 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2008 SJPM-H4 Physical Dimensions ● SJP Package 4.5±0.2 2.6±0.2 +0.1 -0.05 +0.1 -0.2 0.05 2.15 1.3±0.4 2.0min. 1.3±0.4 1.5±0.2 NOTES: 5.0 +0.4 -0.1 - Dimensions in millimeters - Bare lead frame: Pb-free (RoHS compliant) - Moisture Sensitivity Level 1 (MSL 1) - When soldering the products, be sure to minimize the working time within the following limits: - Flow: 260 °C / 10 s, 1 time Reflow: Preheat: 150 °C to 200 °C / 60 s to 120 s Solder heating: 255 °C / 30 s, 3 times (260 °C peak) - Soldering Iron: 350 °C / 3.5 s, 1 time ● SJP Land Pattern Example 2.0 2.0 4.0 to 4.2 NOTE: - Dimensions in millimeters SJPM-H4-DSE Rev.1.3 SANKEN ELECTRIC CO., LTD. 6 Mar. 09, 2021 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2008 SJPM-H4 Mark.


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