Suppressor Diode. SJPZ-E20 Datasheet

SJPZ-E20 Diode. Datasheet pdf. Equivalent

SJPZ-E20 Datasheet
Recommendation SJPZ-E20 Datasheet
Part SJPZ-E20
Description Transient Voltage Suppressor Diode
Feature SJPZ-E20; PD = 1 W Transient Voltage Suppressor Diode SJPZ-E20 Data Sheet Description The SJPZ-E20 is a powe.
Manufacture Sanken
Datasheet
Download SJPZ-E20 Datasheet





Sanken SJPZ-E20
PD = 1 W
Transient Voltage Suppressor Diode
SJPZ-E20
Data Sheet
Description
The SJPZ-E20 is a power Zener diode designed for the
protection of automotive electronic units, especially from
the surge generated during load dump conditions and
voltage transients induced by inductive loads.
Features
VZ --------------------------------------------- 25 V to 31 V
PRSM ------------------ 50 W (0.5 ms, single block pulse)
PD -------------------------------------------------------- 1 W
AEC-Q101 Qualified
Meets the Surge Protection Requirements in ISO7637-
2 Standard (Pulse 1 to 3)
Suitable for High Reliability and Automotive
Requirement
High Surge Capability
Flammability UL94V-0 (Equivalent)
Bare Lead Frame: Pb-free (RoHS Compliant)
Applications
Protection of sensitive electronic equipment in
passenger cars, trucks, vans, and buses:
Engine Control Units
Electric Control Units
Braking System
Power Steering System
Airbags
Audio/Infotainment Equipment
Typical Application
Package
SJP
(1)
Cathode Mark
(2)
(1)
(2)
(1) Cathode
(2) Anode
Not to scale
Battery
GND
Load
Surge Absorber
SJPZ-E20
SJPZ-E20-DSE Rev.1.0
SANKEN ELECTRIC CO., LTD.
1
Dec. 22, 2020
https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2020



Sanken SJPZ-E20
SJPZ-E20
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Power Dissipation(1)
PD
Peak Pulse Reverse Power
PRSM
Junction Temperature
TJ
Storage Temperature
TSTG
Conditions
Lead temperature, TL(2)
0.5 ms, single block pulse
Rating
Unit
1
W
50
W
55 to 150
°C
55 to 150
°C
Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Reverse Leakage Current
IR
Breakdown Voltage
VZ
Breakdown Voltage Temperature
Coefficient
rZ
Breakdown Region Equivalent
Resistance
RZ
Thermal Resistance
Rth(J-L)
Conditions
VR = 15 V
IZ = 1 mA
IZ = 1 mA
IZ = 10 mA to 20 mA
(3)
Min. Typ.
25
16
4
Max.
10
31
Unit
μA
V
mV/°C
Ω
20 °C/W
Mechanical Characteristics
Parameter
Package Weight
Conditions
TL
Device
TA
Min.
Typ.
Max.
Unit
0.072
g
2 mm
25 mm
2 mm
Copper Area
2 mm
Substrate
25 mm
Figure 1. Lead Temperature Measurement Conditions
(1) See Figure 2.
(2) See Figure 1.
(3) Rth(J-L) is thermal resistance between junction and lead. Lead temperature is measured as shown in Figure 1.
SJPZ-E20-DSE Rev.1.0
SANKEN ELECTRIC CO., LTD.
2
Dec. 22, 2020
https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2020



Sanken SJPZ-E20
SJPZ-E20
Derating Curves
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 140 160
Ambient Temperature, TA (°C)
Figure 2. Power Dissipation Curve(4)
1000
100
10
1
0.1
1
10
100
Pulse Width, tP (ms)
Figure 3. Peak Pulse Reverse Power(5)
(4) See Figure 1 for the measurement conditions.
(5) The pulse is single block pulse.
SJPZ-E20-DSE Rev.1.0
SANKEN ELECTRIC CO., LTD.
3
Dec. 22, 2020
https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2020





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