Suppressor Diode. SJPZ-K28 Datasheet

SJPZ-K28 Diode. Datasheet pdf. Equivalent

SJPZ-K28 Datasheet
Recommendation SJPZ-K28 Datasheet
Part SJPZ-K28
Description Transient Voltage Suppressor Diode
Feature SJPZ-K28; PD = 1 W Transient Voltage Suppressor Diode SJPZ-K28 Data Sheet Description Package The SJPZ-K28.
Manufacture Sanken
Datasheet
Download SJPZ-K28 Datasheet




Sanken SJPZ-K28
PD = 1 W
Transient Voltage Suppressor Diode
SJPZ-K28
Data Sheet
Description
Package
The SJPZ-K28 is a power Zener diode designed for SJP
the protection of automotive electronic units, especially
from the surge generated during load dump conditions
and voltage transients induced by inductive loads.
Features
(1)
(2)
VZ----------------------------------------------- 2 5 V to 31 V
PRSM ----------------------50 W (5 ms, single block pulse)
PD -----------------------------------------------------------1 W
AEC-Q101 Qualified
Meets the Surge Protection Requirements in
ISO7637-2 Standard (Pulse 1 to 3)
Suitable for High Reliability and Automotive
Requirement
High Surge Capability
Flammability UL94V-0 (Equivalent)
Bare Lead Frame: Pb-free (RoHS Compliant)
(1)
(2)
(1) Cathode
(2) Anode
Not to scale
Applications
Protection of sensitive electronic equipment in
passenger cars, trucks, vans, and buses:
Engine Control Units
Electric Control Units
Braking System
Power Steering System
Airbags
Audio/Infotainment Equipment
Typical Application
Battery
GND
Load
Surge Absorber
SJPZ-K28
SJPZ-K28-DSE Rev.1.4
SANKEN ELECTRIC CO., LTD.
1
Feb. 06, 2020
https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2016



Sanken SJPZ-K28
SJPZ-K28
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Power Dissipation(1)
PD
DC Blocking Voltage
VDC
Peak Pulse Reverse Power
PRSM
Junction Temperature
TJ
Storage Temperature
TSTG
Conditions
Lead temperature, TL(2)
5 ms, single block pulse
Rating
Unit
1
W
20
V
50
W
40 to 150
°C
4 0 to 150
°C
Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Forward Voltage Drop
VF
Reverse Leakage Current
IR
Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Breakdown Region Equivalent
Resistance
Thermal Resistance
VZ
rZ
RZ
Rth(J-L)
Conditions
IF = 1 A
VR = 20 V
IZ = 1 mA
IZ = 1 mA
IZ = 1 mA to 10 mA
(3)
Min. Typ. Max. Unit
0.95
V
10
μA
25
31
V
25
mV/°C
26
Ω
20 °C/W
TL
Device
TA
2 mm
Copper Area
25 mm
2 mm
2 mm
Substrate
25 mm
Figure 1. Lead Temperature Measurement Conditions
(1) See Figure 2.
(2) See Figure 1.
(3) Rth(J-L) is thermal resistance between junction and lead. Lead temperature is measured as shown in Figure 1.
SJPZ-K28-DSE Rev.1.4
SANKEN ELECTRIC CO., LTD.
2
Feb. 06, 2020
https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2016



Sanken SJPZ-K28
SJPZ-K28
Rating and Characteristics Curves
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25 50 75 100 125 150
Ambient Temperature, TA (°C)
Figure 2. Power Dissipation Curve(4)
10000
1000
100
10
0.1
1
10
100
Pulse Width, tP (ms)
Figure 3. Peak Pulse Reverse Power(5)
1000
100
10
1
0.1
0.01
0.01
Between junction and ambient air
Between junction and lead
0.1
1
10
100
Time (s)
1000
Figure 4. Typical Transient Thermal Resistance(6)
(4) See Figure 1 for the measurement conditions.
(5) The pulse is single block pulse.
(6) Lead temperature is measured as shown in Figure 1.
SJPZ-K28-DSE Rev.1.4
SANKEN ELECTRIC CO., LTD.
3
Feb. 06, 2020
https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2016





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