Power MOSFET. SHD4101 Datasheet

SHD4101 MOSFET. Datasheet pdf. Equivalent

SHD4101 Datasheet
Recommendation SHD4101 Datasheet
Part SHD4101
Description Power MOSFET
Feature SHD4101; Power MOSFET Module SHD4101 Data Sheet Description The SHD4101 includes four elements (two each of.
Manufacture Sanken
Datasheet
Download SHD4101 Datasheet




Sanken SHD4101
Power MOSFET Module
SHD4101
Data Sheet
Description
The SHD4101 includes four elements (two each of
single and dual fast recovery diodes, two N-channel
power MOSFETs) in its small HSON package. The
internal power MOSFETs have Zener diodes between
gates and sources, thus requiring no externally clamped
circuit for an injection coil drive circuit. Supplied in a
low thermal resistance package, the product achieves
high performance in heat dissipation.
Features
Suitable for High Reliability Applications
Complies with Automotive Quality Requirements
AEC-Q101 Qualified
Bare Lead Frame: Pb-free (RoHS Compliant)
Built-in Zener Diodes between Gates and Sources
Specifications
Element 1: Single Fast Recovery Diode (200 V, 5 A)
Element 2: Dual Fast Recovery Diodes (200 V, 3 A)
Element 3: N-channel Power MOSFET (100 V, 10 A)
Element 4: N-channel Power MOSFET (40 V, 10 A)
Typical Application
Solenoid Injection System
SHD4101
Package
HSON-20
Not to scale
Internal Schematic Diagram
DD
14 13
DD
12 11
G 15
D 16
S 17
NC 18
C 19
A 20
Element 4
Element 1
Element 3
Element 2
12
CC
A: Diode Anode
C: Diode Cathode
D: Power MOSFET Drain
S: Power MOSFET Source
G: Power MOSFET Gate
NC: No Connection
34
CC
10 G
9D
8S
7A
6C
5A
DC/DC
Control
SHD4102
Applications
Injection Coil Driver Circuits
SHD4101-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
1
Oct. 03, 2018
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016



Sanken SHD4101
SHD4101
Contents
Description ------------------------------------------------------------------------------------------------------ 1
Contents --------------------------------------------------------------------------------------------------------- 2
1. Absolute Maximum Ratings (All Elements Common) --------------------------------------------- 3
2. Thermal Characteristics --------------------------------------------------------------------------------- 3
3. Absolute Maximum Ratings and Electrical Characteristics -------------------------------------- 3
3.1. Element 1 (200 V, 5 A Fast Recovery Diode)--------------------------------------------------- 3
3.1.1. Absolute Maximum Ratings----------------------------------------------------------------- 3
3.1.2. Electrical Characteristics -------------------------------------------------------------------- 3
3.1.3. Characteristic Curves ------------------------------------------------------------------------ 4
3.2. Element 2 (200 V, 3 A Fast Recovery Diode)--------------------------------------------------- 5
3.2.1. Absolute Maximum Ratings----------------------------------------------------------------- 5
3.2.2. Electrical Characteristics -------------------------------------------------------------------- 5
3.2.3. Characteristic Curves ------------------------------------------------------------------------ 5
3.3. Element 3 (100 V, 10 A Power MOSFET) ------------------------------------------------------ 6
3.3.1. Absolute Maximum Ratings----------------------------------------------------------------- 6
3.3.2. Electrical Characteristics -------------------------------------------------------------------- 6
3.3.3. Rating and Characteristic Curves --------------------------------------------------------- 7
3.4. Element 4 (40 V, 10 A Power MOSFET) ----------------------------------------------------- 11
3.4.1. Absolute Maximum Ratings--------------------------------------------------------------- 11
3.4.2. Electrical Characteristics ------------------------------------------------------------------ 11
3.4.3. Rating and Characteristic Curves ------------------------------------------------------- 12
3.5. Test Circuits and Waveforms ------------------------------------------------------------------- 16
4. Pin Configuration Definitions------------------------------------------------------------------------- 17
5. Physical Dimensions ------------------------------------------------------------------------------------ 18
5.1. HSON-20 Package--------------------------------------------------------------------------------- 18
5.2. Land Pattern Example --------------------------------------------------------------------------- 19
6. Marking Diagram --------------------------------------------------------------------------------------- 19
Important Notes---------------------------------------------------------------------------------------------- 20
SHD4101-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
2
Oct. 03, 2018
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016



Sanken SHD4101
SHD4101
1. Absolute Maximum Ratings (All Elements Common)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Conditions
Rating
Unit
TC = 25 °C, all elements operating;
mounted on an FR4 board
1.7
W
PD
(26 mm × 36 mm × 1.66 mm)
TC = 25 °C, all elements operating;
with an infinite heatsink
80
W
TJ
150
°C
TSTG
55 to 150
°C
2. Thermal Characteristics
Parameter
Thermal Resistance
(Junction-to-Case)
Symbol
RθJC
Conditions
TC = 25 °C, all elements operating;
with an infinite heatsink
Min.
Typ.
Max.
6.25
Unit
°C/W
3. Absolute Maximum Ratings and Electrical Characteristics
3.1. Element 1 (200 V, 5 A Fast Recovery Diode)
3.1.1. Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Conditions
Rating
Unit
Peak Repetitive Reverse Voltage
VRSM
200
V
Repetitive Reverse Voltage
VRM
200
V
Average Forward Current
Surge Forward Current
I2t Limiting Value
IF(AV)
5
A
IFSM
Half cycle sine wave,
positive side, 10 ms, 1 shot
30
A
I2t
t 30 μs, duty cycle 1%
4.5
A2s
3.1.2. Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward Voltage Drop
VF
TJ = 25 °C, IF = 5 A
1
V
Reverse Leakage Current
Reverse Leakage Current
under High Temperature
Reverse Recovery Time
IR
VR = VRM
HIR VR = VRM, TJ = 150 °C
IF = IRP = 100 mA,
trr
90% recovery point,
TJ = 25 °C
50
µA
300
µA
50
ns
SHD4101-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
3
Oct. 03, 2018
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016





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