Power MOSFET. SHD4102 Datasheet

SHD4102 MOSFET. Datasheet pdf. Equivalent

SHD4102 Datasheet
Recommendation SHD4102 Datasheet
Part SHD4102
Description Power MOSFET
Feature SHD4102; 100 V, 10 A, 50 mΩ N-channel Power MOSFET Module SHD4102 Data Sheet Description The SHD4102 includ.
Manufacture Sanken
Datasheet
Download SHD4102 Datasheet





Sanken SHD4102
100 V, 10 A, 50
N-channel Power MOSFET Module
SHD4102
Data Sheet
Description
The SHD4102 includes four N-channel power
MOSFETs in its small HSON package. The internal
power MOSFETs have Zener diodes between gates and
sources, thus requiring no externally clamped circuit for
an injection coil drive circuit. Supplied in a low thermal
resistance package, the product achieves high
performance in heat dissipation.
Features
Suitable for High Reliability Applications
Complies with Automotive Quality Requirements
AEC-Q101 Qualified
Bare Lead Frame: Pb-free (RoHS Compliant)
Built-in Zener Diodes between Gates and Sources
Low On-resistance
Specifications (Q1 to Q4)
V(BR)DSS ---------------------------------100 V (ID = 100 μA)
ID ---------------------------------------------------------- 10 A
RDS(ON) ---------------- 50 mΩ max. (ID = 5 A, VGS = 10 V)
Typical Application
Solenoid Injection System
Package
HSON-20
Not to scale
Internal Schematic Diagram
DD
14 13
DD
12 11
G 15
D 16
S 17
S 18
D 19
G 20
Q4
Q3
Q1
Q2
10 G
9D
8S
7S
6D
5G
SHD4101
DC/DC
Control
SHD4102
D: Drain
S: Source
G: Gate
12
DD
34
DD
Applications
Injection Coil Driver Circuits
SHD4102-DSE Rev.1.1
SANKEN ELCTRIC CO., LTD.
1
Oct. 31, 2018
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016



Sanken SHD4102
SHD4102
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Drain-to-Source Voltage
VDS
Gate-to-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Single Pulse Avalanche Energy
EAS
Avalanche Current
Drain-to-Source dv/dt 1
Peak Diode Recovery dv/dt 2
Peak Diode Recovery di/dt
IAS
dv/dt 1
dv/dt 2
di/dt
Power Dissipation
PD
Junction Temperature
TJ
Storage Temperature
TSTG
Conditions
TC = 25 °C
t 30 µs, duty cycle 1 %
VDD = 14 V, L = 1.08 mH,
ID = 10 A, unclamped,
RG = 50 Ω;
see Figure 16
See Figure 16
See Figure 17
See Figure 17
TC = 25 °C, all elements operating;
mounted on an FR4 board (26 mm
× 36 mm × 1.66 mm)
TC = 25 °C, all elements operating;
with an infinite heatsink
Rating
100
±20
10
30
62.5
10
0.6
5
100
1.7
80
150
55 to 150
Unit
V
V
A
A
mJ
A
V/ns
V/ns
A/µs
W
W
°C
°C
Thermal Characteristics
Parameter
Thermal Resistance
(Junction-to-Case)
Symbol
RθJC
Conditions
TC = 25 °C, all elements operating;
with an infinite heatsink
Min.
Typ.
Max.
6.25
Unit
°C/W
SHD4102-DSE Rev.1.1
SANKEN ELCTRIC CO., LTD.
2
Oct. 31, 2018
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016



Sanken SHD4102
SHD4102
Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID = 100 μA, VGS = 0 V
100
V
Drain-to-Source Leakage Current
IDSS
VDS = 100 V, VGS = 0 V
100
µA
Gate-to-Source Leakage Current
IGSS
VGS = ± 15 V
± 10
µA
Gate Threshold Voltage
VGS(th) VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transconductance
gfs
VDS = 10 V, ID = 5 A
9
S
Static Drain-to-Source On-resistance RDS(ON) ID = 5 A, VGS = 10 V
38
50
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
VDS = 10 V,
Coss
VGS = 0 V,
f = 1 MHz
Crss
2200
210
pF
110
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Qg
VDD = 50 V,
Qgs
ID = 5 A,
VGS = 10 V,
Qgd
RL = 10 Ω
45
6
nC
10
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Source-to-Drain Diode Forward
Voltage
Source-to-Drain Diode Reverse
Recovery Time
td(on)
VDD = 50 V,
30
tr
ID = 5 A,
40
VGS = 10 V, RG = 20 Ω,
ns
td(off)
RL = 10 Ω;
160
tf
see Figure 18
80
VSD
IS = 10 A, VGS = 0 V
IF = 10 A,
trr
di/dt = 100 A/µs;
see Figure 17
1.2
V
50
ns
SHD4102-DSE Rev.1.1
SANKEN ELCTRIC CO., LTD.
3
Oct. 31, 2018
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016





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