Power MOSFET. SHD4115 Datasheet

SHD4115 MOSFET. Datasheet pdf. Equivalent

SHD4115 Datasheet
Recommendation SHD4115 Datasheet
Part SHD4115
Description Power MOSFET
Feature SHD4115; 100 V, 10 A, 50 mΩ Power MOSFET Module SHD4115 Data Sheet Description The SHD4115 includes four N-.
Manufacture Sanken
Datasheet
Download SHD4115 Datasheet




Sanken SHD4115
100 V, 10 A, 50
Power MOSFET Module
SHD4115
Data Sheet
Description
The SHD4115 includes four N-channel power
MOSFETs in its small HSON package. The internal
power MOSFETs have Zener diodes between gates and
sources, thus requiring no externally clamped circuit for
an injection coil drive circuit. Supplied in a low thermal
resistance package, the product achieves high
performance in heat dissipation. In addition, its HSON
package employs a wettable flank structure, with the pin
tips plated and the case resin around the pins grooved.
This achieves higher reliability in mounting.
Features
High Reliability Achieved
Automotive Requirements Satisfied
AEC-Q101 Qualified
Bare Lead Frame: Pb-free (RoHS Compliant)
Wettable Flank HSON Package
Case Resin around the Pins Grooved
Built-in Zener Diodes between Gates and Sources
Specifications (Q1 to Q4)
V(BR)DSS ------------------------------- 100 V (ID = 100 μA)
ID ------------------------------------------------------- 10 A
RDS(ON) --------------- 50 mΩ max. (ID = 5 A, VGS = 10 V)
Typical Application
Solenoid Injection System
Package
HSON-20
Not to scale
Internal Schematic Diagram
DD
14 13
DD
12 11
G 15
D 16
S 17
S 18
D 19
G 20
Q4
Q3
Q1
Q2
10 G
9D
8S
7S
6D
5G
SHD4111
D: Drain
S: Source
G: Gate
12
DD
34
DD
DC/DC
Control
SHD4115
Application
Injection Coil Driver Circuits
SHD4115-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
1
Sep. 01, 2020
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2020



Sanken SHD4115
SHD4115
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Drain-to-Source Voltage
VDS
Gate-to-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Power Dissipation
PD
Avalanche Energy
EAS
Avalanche Current
Maximum Drain-to-Source dv/dt
Maximum Diode Recovery dv/dt
Maximum Diode Recovery di/dt
Junction Temperature
Storage Temperature
IAS
dv/dt1
dv/dt2
di/dt
TJ
TSTG
Conditions
TC = 25 °C
t 30 µs, duty cycle 1 %
TC = 25 °C, all power MSOFETs
operating; mounted on an FR4 board
(26 mm × 36 mm × 1.66 mm)
TC = 25 °C, all power MSOFETs;
with an infinite heatsink
Single pulse, VDD = 14 V,
L = 1.0 mH, ID = 10 A,
unclamped, RG = 50 Ω;
see Figure 16
VDD = 14 V, L = 1.08 mH,
ID = 10 A, unclamped, RG = 50 Ω;
see Figure 16
See Figure 17
See Figure 17
Rating
100
±20
10
30
1.7
80
62.5
10
0.6
5
100
150
55 to 150
Unit
V
V
A
A
W
W
mJ
A
V/ns
V/ns
A/µs
°C
°C
Thermal Resistance Characteristics
Parameter
Junction-to-Case Thermal
Resistance
Symbol
RθJC
Conditions
TC = 25 °C; with an infinite
heatsink
Min.
Typ.
Max.
6.25
Unit
°C/W
SHD4115-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
2
Sep. 01, 2020
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2020



Sanken SHD4115
SHD4115
Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Drain-to-Source Breakdown
Voltage
V(BR)DSS ID = 100 μA, VGS = 0 V
100
V
Drain-to-Source Leakage Current
IDSS
VDS = 100 V, VGS = 0 V
100
µA
Gate-to-Source Leakage Current
IGSS
VGS = ±15 V
± 10
µA
Gate Threshold Voltage
VGS(TH) VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transconductance
Static Drain-to-Source On-
resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Source-to-Drain Diode Forward
Voltage Drop
Source-to-Drain Diode Reverse
Recovery Time
gFS
VDS = 10 V, ID = 5 A
9
S
RDS(ON) ID = 5 A, VGS = 10 V
38
50
Ciss
VDS = 10 V,
Coss
VGS = 0 V,
f = 1 MHz
Crss
2200
210
pF
110
QG
QGS
QGD
VDD = 50 V,
ID = 5 A,
VGS = 10 V,
RL = 10 Ω
45
6
nC
10
td(ON)
VDD = 50 V,
30
tr
ID = 5 A,
40
VGS = 10 V, RG = 20 Ω,
ns
td(OFF) RL = 10 Ω;
160
tf
see Figure 18
80
VSD
IS = 10 A, VGS = 0 V
IS = 10 A,
trr
di/dt = 100 A/µs;
see Figure 17
1.2
V
50
ns
SHD4115-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
3
Sep. 01, 2020
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2020





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