Schottky Diode. SJPB-H4 Datasheet

SJPB-H4 Diode. Datasheet pdf. Equivalent

SJPB-H4 Datasheet
Recommendation SJPB-H4 Datasheet
Part SJPB-H4
Description Schottky Diode
Feature SJPB-H4; VRSM = 40 V, IF(AV) = 2.0 A Schottky Diode SJPB-H4 Data Sheet Description The SJPB-H4 is a 40 V, 2.
Manufacture Sanken
Datasheet
Download SJPB-H4 Datasheet





Sanken SJPB-H4
VRSM = 40 V, IF(AV) = 2.0 A
Schottky Diode
SJPB-H4
Data Sheet
Description
The SJPB-H4 is a 40 V, 2.0 A Schottky diode with
allowing improvements in VF and IR characteristics.
These characteristic features contribute to improving
power supply efficiency and to enabling high-frequency
systems.
Features
VRSM ------------------------------------------------------ 40 V
IF(AV)------------------------------------------------------ 2.0 A
VF (IF = 2.0 A)----------------------------------- 0.50 V typ.
Bare Lead Frame: Pb-free (RoHS Compliant)
Flammability: Equivalent to UL94V-0
Suitable for High Reliability and Automotive
Requirement
Applications
High speed switching applications as follows:
DC-DC Converter
Adapter
Package
SJP
(1)
(1)
(2)
(2)
(1) Cathode
(2) Anode
Not to scale
SJPB-H4-DSE Rev.1.2
SANKEN ELECTRIC CO., LTD.
1
Oct. 24, 2019
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016



Sanken SJPB-H4
SJPB-H4
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Conditions
Nonrepetitive Peak Reverse Voltage VRSM
Repetitive Peak Reverse Voltage
VRM
Average Forward Current
Surge Forward Current
I2t Limiting Value
IF(AV)
IFSM
I2t
See Figure 1 and Figure 2
Half cycle sine wave,
positive side, 10 ms, 1 shot
1 ms t 10ms
Junction Temperature
TJ
Storage Temperature
TSTG
Rating
Unit
40
V
40
V
2.0
A
50
A
12.5
A2s
40 to 150
°C
40 to 150
°C
Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Conditions
Forward Voltage Drop
Reverse Leakage Current
Reverse Leakage Current
under High Temperature
Thermal Resistance(1)
VF
IR
HIR
Rth(J-L)
IF = 2.0 A
VR = VRM
VR = VRM, TJ = 150 °C
Min. Typ. Max. Unit
0.50 0.55
V
200 µA
70
mA
20 °C/W
(1) Rth (J-L) is thermal resistance between junction and lead.
SJPB-H4-DSE Rev.1.2
SANKEN ELECTRIC CO., LTD.
2
Oct. 24, 2019
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016



Sanken SJPB-H4
SJPB-H4
Rating and Characteristic Curves
TJ = 150 °C
2.0
t
T
1.8
1.6
DC
1.4
t/T = 1/2
1.2
t/T = 1/3, sine wave
1.0
t/T = 1/6
0.8
0.6
0.4
0.2
0.0
100 110 120 130 140 150
Case Temperature, TC (°C)
Figure 1. Typical Characteristics: IF(AV) vs. TC
(VR = 0 V)
100
10
TJ = 150 °C
1
0.1
0.01
TJ = 100 °C
TJ = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage Drop, VF (V)
Figure 3. Typical Characteristics: IF vs. VF
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
TJ = 150 °C
t
T
DC
Sine wave
t/T = 1/2
t/T = 1/3
t/T = 1/6
100
150
Case Temperature, TC (°C)
Figure 2. Typical Characteristics: IF(AV) vs. TC
(VR = 40 V)
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
TJ = 150 °C
TJ = 100 °C
1.E-05
1.E-06
TJ = 25 °C
1.E-07
0
10
20
30
40
Reverse Voltage, VR (V)
Figure 4. Typical Characteristics: IR vs. VR
SJPB-H4-DSE Rev.1.2
SANKEN ELECTRIC CO., LTD.
3
Oct. 24, 2019
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016





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