Recovery Diode. SJPD-D5 Datasheet

SJPD-D5 Diode. Datasheet pdf. Equivalent

SJPD-D5 Datasheet
Recommendation SJPD-D5 Datasheet
Part SJPD-D5
Description Fast Recovery Diode
Feature SJPD-D5; VRM = 500 V, IF(AV) = 1.0 A, trr = 40 ns Fast Recovery Diode SJPD-D5 Data Sheet Description The SJ.
Manufacture Sanken
Datasheet
Download SJPD-D5 Datasheet




Sanken SJPD-D5
VRM = 500 V, IF(AV) = 1.0 A, trr = 40 ns
Fast Recovery Diode
SJPD-D5
Data Sheet
Description
The SJPD-D5 is a fast recovery diode of 500 V / 1.0 A.
The maximum trr of 40 ns is realized by optimizing a life-
time control.
Features
VRM---------------------------------------------------- 500 V
IF(AV)----------------------------------------------------1.0 A
VF ------------------------------------------------------1.4 V
trr1------------------------------------------------------- 40 ns
Bare Lead Frame: Pb-free (RoHS Compliant)
Flammability: Equivalent to UL94V-0
Suitable for High Reliability and Automotive
Requirement
Package
SJP
(1)
(1)
Applications
White Goods
Audiovisual Equipment
Lighting Equipment
Industrial Electronic Equipment
(Communication Equipment and Factory Automation)
Secondary-side Rectifier Diode
(Flyback Converter, LLC Converter, etc.)
Freewheel Diode
(Offline Buck Converter, Offline Buck-boost
Converter, etc.)
Cathode Mark
(2)
(2)
(1) Cathode
(2) Anode
Not to scale
SJPD-D5-DSE Rev.1.2
SANKEN ELECTRIC CO., LTD.
1
Sep. 14, 2020
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2010



Sanken SJPD-D5
SJPD-D5
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Conditions
Rating
Unit
Nonrepetitive Peak Reverse Voltage VRSM
500
V
Repetitive Peak Reverse Voltage
VRM
500
V
Average Forward Current
IF(AV) See Figure 2 and Figure 3
1.0
A
Half cycle sine wave,
Surge Forward Current
IFSM positive side, 10 ms,
1 shot
20
A
I2t Limiting Value
I2t
1 ms t 10 ms
2.0
A2s
Junction Temperature
TJ
40 to 150
°C
Storage Temperature
TSTG
40 to 150
°C
Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward Voltage Drop
VF
TJ = 25 °C, IF = 1.0 A
TJ = 100 °C, IF = 1.0 A
1.4
V
1.0
V
Reverse Leakage Current
IR
VR = VRM
10
µA
Reverse Leakage Current
under High Temperature
HIR VR = VRM, TJ = 150 °C
100
µA
Reverse Recovery Time
IF = IRP = 100 mA,
trr1 90% recovery point,
40
ns
TJ = 25 °C
IF = 100 mA, IRP = 200 mA,
trr2 75% recovery point,
30
ns
Thermal Resistance (1)
Rth(J-L)
TJ = 25 °C
20 °C/W
Mechanical Characteristics
Parameter
Package Weight
Conditions
TL
Device
TA
Min.
Typ.
Max.
Unit
0.072
g
2 mm
Copper Area
25 mm
2 mm
2 mm
Substrate
25 mm
Figure 1. Lead Temperature Measurement Conditions
(1) Rth (J-L) is thermal resistance between junction and lead. Lead temperature (TL) is measured near the root of pin (see
Figure 1).
SJPD-D5-DSE Rev.1.2
SANKEN ELECTRIC CO., LTD.
2
Sep. 14, 2020
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2010



Sanken SJPD-D5
SJPD-D5
Derating Curves
1.0
t/T = 1/2
DC
0.8
0.6
t/T = 1/3, sine wave
t/T = 1/6
0.4
0.2
t
T
0.0
100 110 120 130 140 150
Lead Temperature, TL (°C)
Figure 2. IF(AV) vs. TL (TJ = 150 °C, VR = 0 V)
1.0
DC
0.8
t/T = 1/2
0.6
t/T = 1/3, sine wave
t/T = 1/6
0.4
0.2
t
T
0.0
100 110 120 130 140 150
Lead Temperature, TL (°C)
Figure 3. IF(AV) vs. TL (TJ = 150 °C, VR = 500 V)
SJPD-D5-DSE Rev.1.2
SANKEN ELECTRIC CO., LTD.
3
Sep. 14, 2020
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2010





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