Schottky Diode. SZ-10EF Datasheet

SZ-10EF Diode. Datasheet pdf. Equivalent

SZ-10EF Datasheet
Recommendation SZ-10EF Datasheet
Part SZ-10EF
Description Schottky Diode
Feature SZ-10EF; VRM = 80 V, IF(AV) = 45 A Schottky Diode SZ-10EF Data Sheet Description Package The SZ-10EF is a.
Manufacture Sanken
Datasheet
Download SZ-10EF Datasheet




Sanken SZ-10EF
VRM = 80 V, IF(AV) = 45 A
Schottky Diode
SZ-10EF
Data Sheet
Description
Package
The SZ-10EF is an 80 V, 45 A Schottky diode for
SZ-10
automotive, and has low leakage current and low forward
voltage drop. These characteristics provide high
efficiency rectification circuit. The low thermal resistance
(2)
package achieves high performance in terms of heat
dissipation.
Features
VRM------------------------------------------------------- 80 V
IF(AV)------------------------------------------------------ 45 A
VF (IF = 45 A)----------------------------------0.75 V (typ.)
HIR (TJ = 150 °C) ---------------------------------------- 50 mA (max.)
Repetitive Avalanche Power-------------------------3 kW
Bare Lead Frame: Pb-free (RoHS Compliant)
Flammability UL94V-0 (Equivalent)
Suitable for High Reliability and Automotive
Requrement
Anode Heatsink Package
(1)
(1)
(2)
(1) Cathode
(2) Anode
Not to scale
Applications
High speed switching applications as follows:
DC/DC Converter
Secondary Rectifier Circuit
Adapter
SZ-10EF-DSE Rev.1.3
SANKEN ELECTRIC CO., LTD.
1
Jan. 22, 2020
https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2016



Sanken SZ-10EF
SZ-10EF
Absolute Maximum Ratings
Unless specifically noted TA = 25 °C.
Parameter
Symbol
Conditions
Rating
Unit
Repetitive Peak Reverse Voltage
VRM
80
V
Average Forward Current
IF(AV)
t/T 1/4,
see Figure 3 and Figure 4.
45
A
Half cycle sine wave,
Surge Forward Current
IFSM
positive side, 10 ms, 1
300
A
shot
Repetitive Avalanche Power
PAR
tP = 10 μs,
see Figure 1
3
kW
Junction Temperature
TJ
40 to 150
°C
Storage Temperature
TSTG
40 to 150
°C
Electrical Characteristics
Unless specifically noted TA = 25 °C.
Parameter
Symbol
Forward Voltage Drop
VF
Reverse Leakage Current
Reverse Leakage Current
under High Temperature
Thermal Resistance(1)
IR
HIR
Rth(J-F)
Conditions
IF = 45 A
VR = VRM
VR = VRM, TJ = 150 °C
Min. Typ. Max. Unit
0.75 0.82
V
1
50
µA
10
50
mA
0 .4 0 0.65 °C/W
Avalanche
current
IP
0.5×IP
tP
0 10µs
time
Figure 1. Definition of Pulse Width, tP
TF
Figure 2. Frame Temperature Measurement Point
(1) Rth(J-F) is thermal resistance between junction and frame with infinite heatsink. Lead temperature is measured at anode
frame (see Figure 2).
SZ-10EF-DSE Rev.1.3
SANKEN ELECTRIC CO., LTD.
2
Jan. 22, 2020
https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2016



Sanken SZ-10EF
SZ-10EF
Rating and Characteristic Curves
45
40
t/T=1/4
35
30
t/T = 1/3
t/T = 1/2
DC
25
20
15
TJ = 150 °C
10
t
5
T
0
120 125 130 135 140 145 150
Frame Temperature, TF (°C)
Figure 3. Typical Characteristics: IF(AV) vs. TF
(VR = 0 V, Rth(J-F) = 0.65 °C/W)
45
40
35
t/T = 1/4
30
t/T = 1/3
t/T = 1/2
DC
25
20
15
TJ = 150 °C
10
t
5
T
0
120 125 130 135 140 145 150
Frame Temperature, TF (°C)
Figure 4. Typical Characteristics: IF(AV) vs. TF
(VR = 80 V, Rth(J-F) = 0.65 °C/W)
120
10
100
80
60
1
40
20
0
0 25 50 75 100 125 150
Junction Temperature, TJ (°C)
Figure 5. Typical Characteristics: PAR vs. TJ (tP = 10
µs)
0.1
0.1
1
10
100
Pulse Width, tP (μs)
Figure 6. Typical Characteristics: PAR vs. tP
(TJ = 25 °C)
SZ-10EF-DSE Rev.1.3
SANKEN ELECTRIC CO., LTD.
3
Jan. 22, 2020
https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2016





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)