Schottky Diode. SZ-E10ET415 Datasheet

SZ-E10ET415 Diode. Datasheet pdf. Equivalent

SZ-E10ET415 Datasheet
Recommendation SZ-E10ET415 Datasheet
Part SZ-E10ET415
Description Schottky Diode
Feature SZ-E10ET415; VRM = 150 V, IF(AV) = 45 A Schottky Diode SZ-E10ET415 Data Sheet Description Package The SZ-E10E.
Manufacture Sanken
Datasheet
Download SZ-E10ET415 Datasheet





Sanken SZ-E10ET415
VRM = 150 V, IF(AV) = 45 A
Schottky Diode
SZ-E10ET415
Data Sheet
Description
Package
The SZ-E10ET415 is a 150 V, 45 A Schottky diode SZ-E10
for automotive applications. The product achieves
characteristics such as low leakage current and low
forward voltage drop, thus providing a high-efficient
rectification circuit. Its low thermal resistance package
(2)
has excellent performance in heat dissipation.
Features
VRM------------------------------------------------------ 150 V
IF(AV)------------------------------------------------------- 45 A
VF (IF = 45 A)---------------------------------- 0.98 V (typ.)
HIR (TJ = 150 °C) -----------------------------------------35 mA (max.)
Avalanche Power ------------------------------------ 2.5 kW
Bare Lead Frame: Pb-free (RoHS Compliant)
Flammability: Equivalent to UL94V-0
Suitable for High Reliability and Automotive
Requirements
Anode Heatsink Package
(1)
(1)
(2)
(1) Cathode
(2) Anode
Not to scale
Applications
High speed switching applications such as:
DC/DC Converter
Adapter
Secondary Rectifier Circuit
SZ-E10ET415-DSE Rev.1.2
SANKEN ELECTRIC CO., LTD.
1
Jan. 22, 2020
https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2019



Sanken SZ-E10ET415
SZ-E10ET415
Absolute Maximum Ratings
Unless specifically noted, TA = 25 °C.
Parameter
Symbol
Repetitive Peak Reverse Voltage
VRM
Average Forward Current
IF(AV)
Surge Forward Current
IFSM
Avalanche Power(1)
PA
Junction Temperature
TJ
Storage Temperature
TSTG
Conditions
t/T 1/4,
see Figure 3 and Figure 4.
Half cycle sine wave,
positive side, 10 ms, 1 shot
TJ = 150 °C;
tP = 0.5 μs (see Figure 1),
1 shot
Rating
Unit
150
V
45
A
300
A
2.5
kW
55 to 150
°C
55 to 150
°C
Electrical Characteristics
Unless specifically noted, TA = 25 °C.
Parameter
Symbol
Forward Voltage Drop
VF
Reverse Leakage Current
Reverse Leakage Current
under High Temperature
Thermal Resistance(2)
IR
HIR
Rth(J-F)
Conditions
IF = 45 A
VR = VRM
VR = VRM, TJ = 150 °C
Min. Typ. Max. Unit
0.98 1.10
V
3
30
µA
20
35
mA
0.35 0.55 °C/W
Avalanche
Current
IP
0.5 × IP
tP
0 0.5 µs
time
Figure 1. Definition of Pulse Width, tP
TF
Figure 2. Frame Temperature Measurement Point
(1) Allowed to be applied to the device up to 2 million times.
(2) Refers to thermal resistance between junction and frame with infinite heatsink. Lead temperature is measured at
anode frame (see Figure 2).
SZ-E10ET415-DSE Rev.1.2
SANKEN ELECTRIC CO., LTD.
2
Jan. 22, 2020
https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2019



Sanken SZ-E10ET415
SZ-E10ET415
Rating and Characteristic Curves
45
40
t/T = 1/3, sine wave
35
t/T = 1/2
DC
30
t/T=1/4
25
20
15
TJ = 150 °C
10
t
5
T
0
125
130 135 140 145 150
Frame Temperature, TF (°C)
Figure 3. Typical Characteristics: IF(AV) vs. TF
(VR = 0 V, Rth(J-F) = 0.55 °C/W)
45
40
35
30
t/T = 1/3
t/T = 1/4
25
Sine wave
t/T = 1/2
DC
20
15
TJ = 150 °C
10
5
t
T
0
120 125 130 135 140 145 150
Frame Temperature, TF (°C)
Figure 4. Typical Characteristics: IF(AV) vs. TF
(VR = 150 V, Rth(J-F) = 0.55 °C/W)
120
100
80
60
40
20
0
2.0
2.5
3.0
3.5
4.0
4.5
Avalanche Power, PA (kW)
Figure 5. Typical Characteristics: Derating of PA
Applying Times vs. PA (tP = 0.5 µs)
(3) See Figure 1.
1000
100
10
1
0.1
1.0
10.0
Pulse Width, tP (μs)
Figure 6. Typical Characteristics: Derating of PA
Applying Times vs. tP(3) (TJ = 150 °C)
SZ-E10ET415-DSE Rev.1.2
SANKEN ELECTRIC CO., LTD.
3
Jan. 22, 2020
https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2019





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