Schottky Diode. SZ-E10EF48 Datasheet

SZ-E10EF48 Diode. Datasheet pdf. Equivalent

SZ-E10EF48 Datasheet
Recommendation SZ-E10EF48 Datasheet
Part SZ-E10EF48
Description Schottky Diode
Feature SZ-E10EF48; VRM = 80 V, IF(AV) = 45 A Schottky Diode SZ-E10EF48 Data Sheet Description Package The SZ-E10EF4.
Manufacture Sanken
Datasheet
Download SZ-E10EF48 Datasheet





Sanken SZ-E10EF48
VRM = 80 V, IF(AV) = 45 A
Schottky Diode
SZ-E10EF48
Data Sheet
Description
Package
The SZ-E10EF48 is a 80 V, 45 A Schottky diode for
SZ-E10
automotive applications. The product achieves
characteristics such as low leakage current and low
forward voltage drop, thus providing a high-efficient
(2)
rectification circuit. Its low thermal resistance package
has excellent performance in heat dissipation.
Features
VRM------------------------------------------------------- 80 V
IF(AV)------------------------------------------------------ 45 A
VF (IF = 45 A)----------------------------------0.76 V (typ.)
HIR (TJ = 150 °C) ----------------------------------------50 mA (max.)
Avalanche Power --------------------------------------3 kW
Bare Lead Frame: Pb-free (RoHS Compliant)
Flammability: Equivalent to UL94V-0
Suitable for High Reliability and Automotive
Requirements
Anode Heatsink Package
(1)
(1)
(2)
(1) Cathode
(2) Anode
Not to scale
Applications
High speed switching applications such as:
DC/DC Converter
Adapter
Secondary Rectifier Circuit
SZ-E10EF48-DSE Rev.1.0
SANKEN ELECTRIC CO., LTD.
1
Sep. 11, 2020
https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2019



Sanken SZ-E10EF48
SZ-E10EF48
Absolute Maximum Ratings
Unless specifically noted, TA = 25 °C.
Parameter
Symbol
Repetitive Peak Reverse Voltage
VRM
Average Forward Current
IF(AV)
Surge Forward Current
IFSM
Avalanche Power
PA
Junction Temperature
TJ
Storage Temperature
TSTG
Conditions
t/T ≥ 1/4,
see Figure 3 and Figure 4.
Half cycle sine wave,
positive side, 10 ms, 1 shot
TJ = 25 °C;
tP = 10 μs (see Figure 1),
1 shot
Rating
Unit
80
V
45
A
300
A
3
kW
55 to 150
°C
55 to 150
°C
Electrical Characteristics
Unless specifically noted, TA = 25 °C.
Parameter
Symbol
Forward Voltage Drop
VF
Reverse Leakage Current
Reverse Leakage Current
under High Temperature
Thermal Resistance(1)
IR
HIR
Rth(J-L)
Conditions
IF = 45 A
VR = VRM
VR = VRM, TJ = 150 °C
Min. Typ. Max. Unit
0.76 0.82
V
50
µA
50 mA
0.50 °C/W
Mechanical Characteristics
Parameter
Package Weight
Conditions
Min. Typ. Max. Unit
2.6
g
Avalanche
Current
IP
0.5 × IP
tP
0 10 µs
time
Figure 1. Definition of Pulse Width, tP
TL
Figure 2. Lead Temperature Measurement Point
(1) Refers to thermal resistance between junction and lead with infinite heatsink. Lead temperature is measured at anode
lead (see Figure 2).
SZ-E10EF48-DSE Rev.1.0
SANKEN ELECTRIC CO., LTD.
2
Sep. 11, 2020
https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2019



Sanken SZ-E10EF48
SZ-E10EF48
Derating Curves
45
t/T = 1/3
40
t/T = 1/2
35
DC
30
t/T=1/4
25
20
15
10
5
t
T
0
130
135
140
145
150
Lead Temperature, TL (°C)
Figure 3. IF(AV) vs. TL
(TJ = 150 °C, VR = 0 V, Rth(J-L) = 0.50 °C/W)
45
40
35
t/T = 1/3
30
t/T = 1/4
25
t/T = 1/2
DC
20
15
10
5
t
T
0
125 130 135 140 145 150
Lead Temperature, TL (°C)
Figure 4. IF(AV) vs. TL
(TJ = 150 °C, VR = 80 V, Rth(J-L) = 0.50 °C/W)
120
10
100
80
60
1
40
20
0
0 25 50 75 100 125 150
Junction Temperature, TJ (°C)
Figure 5. Derating of PA Applying Power vs. TJ
(tP = 10 µs)
0.1
0.1
1
10
100
Pulse Width, tP (μs)
Figure 6. Derating Rate of PA Applying Power vs. tP(2)
(TJ = 25 °C)
(2) See Figure 1.
SZ-E10EF48-DSE Rev.1.0
SANKEN ELECTRIC CO., LTD.
3
Sep. 11, 2020
https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2019





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