2N3867, 2N3867S & 2N3868, 2N3868S
PNP Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-19...
2N3867, 2N3867S & 2N3868, 2N3868S
PNP Power Silicon
Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/545
TO-5 Package: 2N3867, 2N3868 TO-39 (TO-205AD) Package: 2N3867S, 2N3868S
Rev. V1
Electrical Characteristics
Parameter Off Characteristics
Collector - Base Breakdown Voltage
Collector - Emitter Breakdown Voltage
Test Conditions
IC = 100 µAdc, 2N3867, 2N3867S IC = 100 µAdc, 2N3868, 2N3868S IC = 20 mAdc, 2N3867, 2N3867S IC = 20 mAdc, 2N3868, 2N3868S
Emitter - Base Breakdown Voltage Collector - Emitter Cutoff Current Collector - Base Cutoff Current
IC = 100 mAdc
VEB = 2 Vdc, VCE = 40 Vdc, 2N3867, 2N3867S
VEB = 2 Vdc, VCE = 60 Vdc, 2N3868, 2N3868S
VCB = 60 Vdc, 2N3867, 2N3867S VCB = 80 Vdc, 2N3868, 2N3868S
Emitter - Base Cutoff Current On Characteristics1
VEB = 4.0 Vdc
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
IC = 500 mAdc, VCE = 1 Vdc, 2N3867, 2N3867S 2N3868, 2N3868S
IC = 1.5 Adc, VCE = 2 Vdc, 2N3867, 2N3867S 2N3868, 2N3868S
IC = 2.5 Adc, VCE = 3 Vdc, 2N3867, 2N3867S 2N3868, 2N3868S
IC = 3.0 mAdc, VCE = 5 Vdc, All Types
IC = 500 mAdc, IB = 50 mAdc IC = 1.5 Adc, IB = 150 mAdc IC = 2.5 Adc, IB = 250 mAdc
IC = 500 mAdc, IB = 50 mAdc IC = 1.5 Adc, IB = 150 mAdc IC = 2.5 Adc, IB = 250 mAdc
Symbol Units Min.
V(BR)CEO Vdc
40 60
V(BR)CEO Vdc
40 60
V(BR)EBO Vdc
40
ICEX µAdc
—
ICEO µAdc
—
IEBO µAdc
—
50 35
40
HFE
-
30...