2N3868S

2N3867, 2N3867S & 2N3868, 2N3868S PNP Power Silicon Transistor Features  Available in JAN, JANTX, JANTXV per MIL-PRF-19500/545  TO-5 Package: 2N3867, 2N3868  TO-39 (TO-205AD) Package: 2N3867S, 2N3868S Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Test Conditions IC = 100 µAdc, 2N3867, 2N3867S IC = 100 µAdc, 2N3868, 2N3868S IC = 20 mAdc, 2N3867, 2N3867S IC = 20 mAdc, 2N3868, 2N3868S Emitter - Base Breakdown Voltage Collector - Emitter Cutoff Current Collector - Base Cutoff Current IC = 100 mAdc VEB = 2 Vdc, VCE = 40 Vdc, 2N3867, 2N3867S VEB = 2 Vdc, VCE = 60 Vdc, 2N3868, 2N3868S VCB = 60 Vdc, 2N3867, 2N3867S VCB = 80 Vdc, 2N3868, 2N3868S Emitter - Base Cutoff Current On Characteristics1 VEB = 4.0 Vdc Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage 1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%. IC = 500 mAdc, VCE = 1 Vdc, 2N3867, 2N3867S 2N3868, 2N3868S IC = 1.5 Adc, VCE = 2 Vdc, 2N3867, 2N3867S 2N3868, 2N3868S IC = 2.5 Adc, VCE = 3 Vdc, 2N3867, 2N3867S 2N3868, 2N3868S IC = 3.0 mAdc, VCE = 5 Vdc, All Types IC = 500 mAdc, IB = 50 mAdc IC = 1.5 Adc, IB = 150 mAdc IC = 2.5 Adc, IB = 250 mAdc IC = 500 mAdc, IB = 50 mAdc IC = 1.5 Adc, IB = 150 mAdc IC = 2.5 Adc, IB = 250 mAdc Symbol Units Min. V(BR)CEO Vdc 40 60 V(BR)CEO Vdc 40 60 V(BR)EBO Vdc 40 ICEX µAdc — ICEO µAdc — IEBO µAdc — 50 35 40 HFE - 30...