2N3868S

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/350 DEVICES 2N3867 2N3868 2N3867S 2N3868S LEVELS JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C (1) Operating & Storage Junction Temperature Range Symbol 2N3867 2N3868 VCBO VCEO VEBO IC PT TJ, Tstg 40 60 40 60 4.0 3.0 1.0 -65 to +200 THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Max. Thermal Resistance, Junction-to-Ambient RθJA 175 Note: * Electrical characteristics for “S” suffix devices are identical to the “non S” corresponding devices. 1/ Derate linearly 5.71mW/°C for TA > +25°C 2/ Derate linearly 57.1mW/°C for TC > +25°C Unit Vdc Vdc Vdc mAdc W/°C °C Unit °C/mW ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Current IC = 10μAdc 2N3867, S 2N3868, S Collector-Base Cutoff Current VCB = 40Vdc VCB = 60Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc Collector-Emitter Cutoff Current VCE = 40Vdc VCE = 60Vdc VCE = 40Vdc, TA = +150°C VCE = 60Vdc, TA = +15...