Drive Inverter. SMA5135 Datasheet

SMA5135 Inverter. Datasheet pdf. Equivalent

SMA5135 Datasheet
Recommendation SMA5135 Datasheet
Part SMA5135
Description 3-phase Motor Drive Inverter
Feature SMA5135; VDSS = ± 60 V, ID(DC) = ± 6 A 3-phase Motor Drive Inverter SMA5135 Features ● V(BR)DSS ------------.
Manufacture Sanken
Datasheet
Download SMA5135 Datasheet




Sanken SMA5135
VDSS = ± 60 V, ID(DC) = ± 6 A
3-phase Motor Drive Inverter
SMA5135
Features
V(BR)DSS --------------------------------± 60 V (ID = 100 μA)
ID ---------------------------------------------------------- ± 6A
RDS(ON) -------------------------------------------0.22 Ω max.
Package
SIP12 (SMA-12)
Built-in three half bridge circuit configured by
P-channel MOSFET and N-channel MOSFET
Low On Resistance
ESD protection Zener with each Gate
Compliant with RoHS directive
Applications
3-phase DC Motor Driver
(1)
Equivalent circuit
(12)
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Characteristic
Symbol
Test conditions
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Allowable Power
Dissipation
Thermal Resistance
Channel Temperature
Storage Temperature
VDSS
VGSS
ID(DC)
ID(PULSE)
PT
θj-a
θj-c
Tch
Tstg
PW ≤ 1 ms
Duty cycle ≤25 %
No.Fin Ta=25°C
All Element Operation
Tc=25°C
All Element Operation
Junction-to-Ambient
All Element Operation
Junction-to-Case
All Element Operation
Rating
N-channel P-channel
MOSFET MOSFET
60
6 0
±20
±20
6
6
10
10
4
29
31.25
4.31
150
40 to 150
Unit
V
V
A
A
W
°C/W
°C/W
°C
°C
SMA5135 DSE Rev.1.1
SANKEN ELECTRIC CO.,LTD.
1
Apr. 13, 2016



Sanken SMA5135
SMA5135
Electrical Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Test Conditions
Min. Typ. Max. Unit
N-channel MOSFET
Drain to Source Breakdown
Voltage
V(BR)DSS ID = 100 μA, VGS = 0 V
60
V
Drain to Source Leakage Current
IDSS VDS = 60 V, VGS = 0 V
100
µA
Gate to Source Leakage Current
IGSS VGS = ± 20 V
± 10
µA
Gate Threshold Voltage
VTH VDS = 10 V, ID = 250 μA
1.0
2.0
V
Forward Transconductance
Re(yfs) VDS = 10 V, ID = 3 A
5.5
S
Static Drain to Source On-State
RDS(ON) ID = 3 A, VGS = 4 V
0.22
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
VDS = 10 V
Coss VGS = 0 V
Crss
f = 1 MHz
320
160
pF
35
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
16
tr
VDD 20 V
65
ID = 3 A
ns
td(off) VGS = 5 V, RL = 6.67 Ω
70
Fall Time
tf
45
Source to Drain Diode Forward
Voltage
VSD IS = 6A, VGS = 0 V
1.2
V
Source to Drain Diode Reverse
Recovery Time
trr
ISD = 3 A, VGS = 0 V
di/dt = 100 A/µs
65
ns
P-channel MOSFET
Drain to Source Breakdown
Voltage
V(BR)DSS ID = − 100 μA, VGS = 0 V
60
Drain to Source Leakage Current
IDSS VDS = − 60 V, VGS = 0 V
V
100
µA
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
IGSS VGS = ± 20 V
± 10
µA
VTH
VDS = − 10 V, ID = 250
μA
1.0
2.0
V
Re(yfs) VDS = − 10 V, ID = − 3 A
6.0
S
Static Drain to Source On-State
RDS(ON) ID = − 3 A, VGS = 10 V
0.22
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
VDS = − 10 V
Coss VGS = 0 V
Crss
f = 1 MHz
790
310
pF
90
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
40
tr
VDD 20 V
110
ID = − 3 A
ns
td(off) VGS = − 5 V, RL = 6.67 Ω
160
Fall Time
tf
80
Source to Drain Diode Forward
Voltage
VSD IS = − 6A, VGS = 0 V
1.1
V
Source to Drain Diode Reverse
Recovery Time
trr
ISD = − 3 A, VGS = 0 V
di/dt = 100 A/µs
85
ns
SMA5135 DSE Rev.1.1
SANKEN ELECTRIC CO.,LTD.
2
Apr. 13, 2016



Sanken SMA5135
SMA5135
Typical Characteristics
Figure 1 ID vs. VDS Characteristics (N-channel)
Figure 2 ID vs. VDS Characteristics (P-channel)
Figure 3 ID vs. VGS Characteristics (N-channel)
Figure 4 ID vs. VGS Characteristics (P-channel)
SMA5135 DSE Rev.1.1
SANKEN ELECTRIC CO.,LTD.
3
Apr. 13, 2016





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