Recovery Diode. SPXS-2102S Datasheet

SPXS-2102S Diode. Datasheet pdf. Equivalent

SPXS-2102S Datasheet
Recommendation SPXS-2102S Datasheet
Part SPXS-2102S
Description Fast Recovery Diode
Feature SPXS-2102S; VRM = 200 V, IF(AV) = 10 A, trr = 30 ns Fast Recovery Diode SPXS-2102S Data Sheet Description The .
Manufacture Sanken
Datasheet
Download SPXS-2102S Datasheet





Sanken SPXS-2102S
VRM = 200 V, IF(AV) = 10 A, trr = 30 ns
Fast Recovery Diode
SPXS-2102S
Data Sheet
Description
The SPXS-2102S is a fast recovery diode of 200 V /
10 A. The maximum trr of 30 ns is realized by optimizing
a life-time control. The low thermal resistance package
achieves high performance in terms of heat dissipation.
Features
VRM---------------------------------------------------- 200 V
IF(AV)-----------------------------------------------------10 A
VF ---------------------------------------------------- 1.25 V
trr1------------------------------------------------------- 30 ns
Bare Leads: Pb-free (RoHS Compliant)
Flammability: Equivalent to UL94V-0
Applications
Secondary-side Rectifier Diode
(Flyback Converter, LLC Converter, etc.)
Freewheel Diode
(Offline Buck Converter, Offline Buck-boost
Converter, etc.)
Package
TO252-2L
(4)
(1) (2) (3)
(1)
(3)
(2)(4)
(1) Anode
(2) Cathode
(3) Anode
(4) Cathode
Not to scale
SPXS-2102S-DSE Rev.1.0
SANKEN ELECTRIC CO., LTD.
1
Jan. 06, 2021
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2019



Sanken SPXS-2102S
SPXS-2102S
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Conditions
Rating
Unit
Nonrepetitive Peak Reverse Voltage(1) VRSM
Repetitive Peak Reverse Voltage(1)
VRM
200
V
200
V
Average Forward Current
Surge Forward Current(1)
I2t Limiting Value(1)
IF(AV) See Figure 3 and Figure 4
10
A
IFSM
Half cycle sine wave,
positive side, 10 ms, 1 shot
65
A
I2t 1 ms t 10 ms
21
A2s
Junction Temperature
TJ
40 to 150
°C
Storage Temperature
TSTG
40 to 150
°C
Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Forward Voltage Drop(1)
VF
Reverse Leakage Current(1)
Reverse Leakage Current
under High Temperature(1)
Reverse Recovery Time(1)
Thermal Resistance (2)
IR
HIR
trr1
trr2
Rth(J-C)
Conditions
TJ = 25 °C, IF = 5.0 A
TJ = 100 °C, IF = 5.0 A
VR = VRM
VR = VRM, TJ = 150 °C
IF = IRP = 100 mA,
90% recovery point, TJ = 25 °C
IF = 100 mA, IRP = 200 mA,
75% recovery point, TJ = 25 °C
(3)
Min. Typ. Max. Unit
1.25 V
0.82
V
50 µA
10 mA
30
ns
25
ns
5.0 °C/W
Mechanical Characteristics
Parameter
Package Weight
Conditions
Min. Typ. Max. Unit
0.32
g
TC
20 mm
Figure 1. Case Temperature Measurement Point
5.0 mm
Copper area
5.8 mm
2.2 mm
4.0 mm
1.6 mm
3.0 mm
30 mm
Figure 2. Glass-epoxy Board
Board
(1) Specifies a value per chip; the SPXS-2102S consists of two chips.
(2) Refers to thermal resistance between junction and the case.
(3) The device is mounted on the glass-epoxy board (PCB: 42 mm × 32 mm in size, 1 mm in thickness, copper area: see
Figure 2).
SPXS-2102S-DSE Rev.1.0
SANKEN ELECTRIC CO., LTD.
2
Jan. 06, 2021
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2019



Sanken SPXS-2102S
SPXS-2102S
Derating Curves
10
8
t/T = 1/3, sine wave
6
t/T = 1/6
4
DC
t/T = 1/2
2
t
T
0
50 70
90 110 130 150
Case Temperature, TC (°C)
Figure 3. IF(AV) vs. TC (TJ = 150 °C, VR = 0 V)
10
Sine wave
t/T = 1/2
8
DC
6
t/T = 1/3
4
t/T = 1/6
2
t
T
0
50
70
90
110 130 150
Case Temperature, TC (°C)
Figure 4. IF(AV) vs. TC (TJ = 150 °C, VR = 200 V)
Characteristic Curves
18
16
t
14
T
t/T = 1/6
12
t/T = 1/3, sine wave
10
8
t/T = 1/2
6
DC
4
2
0
0
2
4
6
8
10
Average Forward Current, IF(AV) (A)
Figure 5. PF(MAX) vs. IF(AV) (TJ = 150 °C)
3.5
3.0
t
T
2.5
1t/T = 5/6
2.0
1t/T = 2/3
1.5
1t/T = 1/2
1.0
0.5
0.0
0
Sine wave
50
100
150
200
Reverse Voltage, VR (V)
Figure 6. PR(MAX) vs. VR (TJ = 150 °C)
SPXS-2102S-DSE Rev.1.0
SANKEN ELECTRIC CO., LTD.
3
Jan. 06, 2021
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2019





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