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IGBT. MM15G3T120B Datasheet |
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November 2019
Version 01
MM15G3T120B
1200V 15A IGBT
RoHS Compliant
PRODUCT FEATURES
□ IGBT chip in trench FS-technology
□ Low switching losses
□ VCE(sat) with positive temperature coefficient
□ Fast switching and short tail current
□ Free wheeling diodes with fast and soft reverse recovery
APPLICATIONS
□ High frequency switching application
□ Medical applications
□ Motion/servo control
□ UPS systems
1
2
3
1.Gate
2.Collector
3.Emitter
Type
VCES
IC
MM15G3T120B 1200V 15A
VCE(sat) TJ=25°C
1.85V
TJmax
175°C
Marking
MM15G3T120B
Package
TO-247
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25℃
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25℃
TC=110℃
ICpuls
Pulsed collector current,tp limited by TJmax
Ptot
Power Dissipation Per IGBT
VRRM Repetitive Reverse Voltage
TJ=25℃
IF(AV) Average Forward Current
TC=110℃
IFpuls
Diode pulsed current,tp limited by TJmax
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Torque to heatsink
Recommended（M3）
Weight
Values
Unit
1200
V
±20
26
15
A
60
200
W
1200
V
15
A
60
175
-40~175
℃
-55~150
1.1
Nm
8
g
MacMic Science & Technology Co., Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com
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MM15G3T120B
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=0.6mA
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
IC=15A, VGE=15V, TJ=25℃
IC=15A, VGE=15V, TJ=125℃
IC=15A, VGE=15V, TJ=150℃
VCE=1200V, VGE=0V, TJ=25℃
VCE=1200V, VGE=0V, TJ=150℃
VCE=0V,VGE=±20V, TJ=25℃
Qg
Gate Charge
VCE=600V, IC=15A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25℃
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=15A
RG =30Ω,
VGE=±15V,
Inductive Load
TJ=125℃
TJ=150℃
TJ=25℃
TJ=125℃
TJ=150℃
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=15A
RG =30Ω,
VGE=±15V,
Inductive Load
TJ=25℃
TJ=125℃
TJ=150℃
TJ=25℃
TJ=125℃
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=15A
RG =30Ω,
VGE=±15V,
Inductive Load
TJ=150℃
TJ=125℃
TJ=150℃
TJ=125℃
TJ=150℃
ISC
Short Circuit Current
tpsc≤10µS , VGE=15V
TJ=125℃,VCC=800V
RthJC Junction to Case Thermal Resistance （ Per IGBT）
Min.
5.2
-400
Typ.
5.8
1.85
2.15
2.25
0.105
1.1
50
22
26
26
22
24
24
180
220
240
155
195
215
1.71
1.93
1.12
1.21
60
Max. Unit
6.5
2.25
V
100 µA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.75 K /W
Anti-Parallel Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=15A , VGE=0V, TJ =25℃
IF=15A , VGE=0V, TJ =125℃
IF=15A , VGE=0V, TJ =150℃
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=15A , VR=600V
dIF/dt=-800A/μs
TJ =150℃
RthJCD Junction to Case Thermal Resistance （ Per Diode）
2
Min. Typ. Max. Unit
1.9
2.4
1.65
V
1.55
226
ns
25
A
2.68
µC
0.75
mJ
1.35 K /W
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30
25℃
25
150℃
20
15
MM15G3T120B
30
25
20
15
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
10
10
5
VGE=15V
5
TJ=150℃
0
0
1
2
3
4
VCE（V）
Figure 1. Typical Output Characteristics IGBT
30
25
VCE=20V
20
15
10
5
25℃
150℃
0
6
7
8
9 10 11 12
VGE（V）
Figure 3. Typical Transfer characteristics IGBT
6
VCE=600V
5
Rg=30Ω
VGE=±15V
TJ=150℃
4
3
Eon
2
Eoff
1
0
0
5 10 15 20 25 30
IC（A）
Figure 5. Switching Energy vs Collector Current IGBT
3
0
0
1
2
3
4
5
VCE（V）
Figure 2. Typical Output Characteristics IGBT
5
VCE=600V
4
IC=15A
VGE=±15V
TJ=150℃
3
2
Eon
Eoff
1
0
0
30
60
90
120
Rg（Ω）
Figure 4. Switching Energy vs Gate Resistor IGBT
35
30
25
Rg=30Ω
VGE=±15V
20
TJ=150℃
15
10
5
0
0 200 400 600 800 1000 1200 1400
VCE（V）
Figure 6. Reverse Biased Safe Operating Area IGBT
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