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MM20G3R135B Dataheets PDF



Part Number MM20G3R135B
Manufacturers MacMic
Logo MacMic
Description IGBT
Datasheet MM20G3R135B DatasheetMM20G3R135B Datasheet (PDF)

March 2018 Preliminary MM20G3R135B 1350V 20A RC- IGBT RoHS Compliant PRODUCT FEATURES □ 1350V Reverse conducting IGBT with monolithic body diode □ VCE(sat) with positive temperature coefficient □ Low switching losses □ Low EMI APPLICATIONS □ HInductive cooking □ Inverterized microwave ovens □ Resonant converters □ Soft switching applications 1 2 3 1.Gate 2.Collector 3.Emitter Type VCES IC MM20G3R135B 1350V 20A VCE(sat) TJ=25°C 1.6V TJmax 175°C Marking MM20G3R135B Package TO-247 ABSO.

  MM20G3R135B   MM20G3R135B



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March 2018 Preliminary MM20G3R135B 1350V 20A RC- IGBT RoHS Compliant PRODUCT FEATURES □ 1350V Reverse conducting IGBT with monolithic body diode □ VCE(sat) with positive temperature coefficient □ Low switching losses □ Low EMI APPLICATIONS □ HInductive cooking □ Inverterized microwave ovens □ Resonant converters □ Soft switching applications 1 2 3 1.Gate 2.Collector 3.Emitter Type VCES IC MM20G3R135B 1350V 20A VCE(sat) TJ=25°C 1.6V TJmax 175°C Marking MM20G3R135B Package TO-247 ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃ TC=100℃ ICpuls Pulsed collector current,tp limited by TJmax Ptot Power Dissipation Per IGBT VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current TC=100℃ IFpuls Diode pulsed current,tp limited by TJmax TJmax Max. Junction Temperature TJop Operating Temperature Tstg Storage Temperature Torque to heatsink Recommended(M3) Weight Values Unit 1350 V ±20 40 20 A 60 333 W 1350 V 20 A 60 175 -40~175 ℃ -55~150 1.1 Nm 8 g MacMic Science & Technology Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China 1 Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website :www.macmicst.com MM20G3R135B IGBT ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=0.5mA VCE(sat) Collector Emitter Saturation Voltage IC=20A, VGE=15V, TJ=25℃ IC=20A, VGE=15V, TJ=125℃ IC=20A, VGE=15V, TJ=175℃ ICES Collector Leakage Current VCE=1350V, VGE=0V, TJ=25℃ VCE=1350V, VGE=0V, TJ=175℃ IGES Gate Leakage Current VCE=0V,VGE=±15V, TJ=25℃ Rgint Integrated Gate Resistor Qg Gate Charge VCE=600V, IC=20A , VGE=15V Cies Input Capacitance Cres Reverse Transfer Capacitance VCE=25V, VGE=0V, f =1MHz td(on) Turn on Delay Time tr Rise Time VCC=600V,IC=20A RG =20Ω, VGE=±15V, Inductive Load TJ=25℃ TJ=125℃ TJ=25℃ TJ=125℃ td(off) Turn off Delay Time tf Fall Time VCC=600V,IC=20A RG =20Ω, VGE=±15V, Inductive Load TJ=25℃ TJ=125℃ TJ=25℃ TJ=125℃ Eon Turn on Energy Eoff Turn off Energy VCC=600V,IC=20A RG =20Ω, VGE=±15V, Inductive Load TJ=25℃ TJ=125℃ TJ=25℃ TJ=125℃ RthJC Junction to Case Thermal Resistance ( Per IGBT) Min. 5.1 -100 Typ. 5.8 1.6 1.8 1.9 none 0.195 1.65 50 70 110 50 60 250 350 80 100 2 2.4 1.1 1.4 Max. Unit 6.4 1.8 V 100 µA 2.5 mA 100 nA Ω µC nF pF ns ns ns ns ns ns ns ns mJ mJ mJ mJ 0.45 K /W Body Diode ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions IF=20A , VGE=0V, TJ =25℃ VF Forward Voltage IF=20A , VGE=0V, TJ =125℃ IF=20A , VGE=0V, TJ =175℃ RthJCD Junction to Case Thermal Resistance ( Per Diode) Min. Typ. Max. Unit 1.6 1.8 1.73 V 1.8 0.45 K /W 2 MM20G3R135B Dimensions in (mm) Package Ou.


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