Document
March 2018
Preliminary
MM20G3R135B
1350V 20A RC- IGBT RoHS Compliant
PRODUCT FEATURES
□ 1350V Reverse conducting IGBT with monolithic body diode □ VCE(sat) with positive temperature coefficient □ Low switching losses □ Low EMI
APPLICATIONS
□ HInductive cooking □ Inverterized microwave ovens □ Resonant converters □ Soft switching applications
1 2 3
1.Gate 2.Collector 3.Emitter
Type
VCES
IC
MM20G3R135B 1350V 20A
VCE(sat) TJ=25°C 1.6V
TJmax 175°C
Marking MM20G3R135B
Package TO-247
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25℃
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25℃ TC=100℃
ICpuls
Pulsed collector current,tp limited by TJmax
Ptot
Power Dissipation Per IGBT
VRRM Repetitive Reverse Voltage
TJ=25℃
IF(AV)
Average Forward Current
TC=100℃
IFpuls
Diode pulsed current,tp limited by TJmax
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Torque to heatsink
Recommended(M3)
Weight
Values
Unit
1350 V
±20
40
20
A
60
333
W
1350
V
20 A
60
175
-40~175
℃
-55~150
1.1
Nm
8
g
MacMic Science & Technology Co., Ltd.
Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website :www.macmicst.com
MM20G3R135B
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=0.5mA
VCE(sat)
Collector Emitter Saturation Voltage
IC=20A, VGE=15V, TJ=25℃ IC=20A, VGE=15V, TJ=125℃ IC=20A, VGE=15V, TJ=175℃
ICES
Collector Leakage Current
VCE=1350V, VGE=0V, TJ=25℃ VCE=1350V, VGE=0V, TJ=175℃
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25℃
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=20A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=20A RG =20Ω, VGE=±15V, Inductive Load
TJ=25℃ TJ=125℃ TJ=25℃ TJ=125℃
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=20A RG =20Ω, VGE=±15V, Inductive Load
TJ=25℃ TJ=125℃ TJ=25℃ TJ=125℃
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=20A RG =20Ω, VGE=±15V, Inductive Load
TJ=25℃ TJ=125℃ TJ=25℃ TJ=125℃
RthJC Junction to Case Thermal Resistance ( Per IGBT)
Min. 5.1
-100
Typ. 5.8 1.6 1.8 1.9
none 0.195 1.65
50 70 110 50 60 250 350 80 100 2 2.4 1.1 1.4
Max. Unit 6.4 1.8
V
100 µA 2.5 mA 100 nA
Ω µC nF pF ns ns ns ns ns ns ns ns mJ mJ mJ mJ 0.45 K /W
Body Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=20A , VGE=0V, TJ =25℃
VF
Forward Voltage
IF=20A , VGE=0V, TJ =125℃
IF=20A , VGE=0V, TJ =175℃
RthJCD Junction to Case Thermal Resistance ( Per Diode)
Min. Typ. Max. Unit
1.6
1.8
1.73
V
1.8
0.45 K /W
2
MM20G3R135B
Dimensions in (mm) Package Ou.