|
|
IGBT. MM40G3U65B Datasheet |
|
|
|
May 2020
Version 01
MM40G3U65B
650V 40A IGBT
RoHS Compliant
PRODUCT FEATURES
□ 650V IGBT chip in trench FS-technology
□ Low switching losses
□ VCE(sat) with positive temperature coefficient
□ Fast switching and short tail current
□ Free wheeling diodes with fast and soft reverse recovery
APPLICATIONS
□ High frequency switching application
□ Medical applications
□ Motion/servo control
□ UPS systems
1
2
3
1.Gate
2.Collector
3.Emitter
Type
VCES
IC
MM40G3U65B 650V 40A
VCE(sat) TJ=25°C
1.75V
TJmax
175°C
Marking
MM40G3U65B
Package
TO-247
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25℃
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25℃
TC=100℃
ICpuls
Pulsed collector current,tp limited by TJmax
Ptot
Power Dissipation Per IGBT
VRRM Repetitive Reverse Voltage
TJ=25℃
IF(AV) Average Forward Current
TC=25℃
IFpuls
Diode pulsed current,tp limited by TJmax
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Torque to heatsink
Recommended（M3）
Weight
Values
Unit
650
V
±20
61
40
A
120
230
W
650
V
40
A
80
175
-40~175
℃
-55~150
1.1
Nm
8
g
MacMic Science & Technology Co., Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com
|
MM40G3U65B
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=1.6mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=40A, VGE=15V, TJ=25℃
IC=40A, VGE=15V, TJ=125℃
IC=40A, VGE=15V, TJ=150℃
ICES
Collector Leakage Current
VCE=650V, VGE=0V, TJ=25℃
VCE=650V, VGE=0V, TJ=150℃
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25℃
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=300V, IC=40A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25℃
td(on)
Turn on Delay Time
tr
Rise Time
VCC=400V,IC=40A
RG =20Ω,
VGE=±15V,
Inductive Load
TJ=125℃
TJ=150℃
TJ=25℃
TJ=125℃
TJ=150℃
TJ=25℃
td(off)
Turn off Delay Time
tf
Fall Time
VCC=400V,IC=40A
RG =20Ω,
VGE=±15V,
Inductive Load
TJ=125℃
TJ=150℃
TJ=25℃
TJ=125℃
TJ=150℃
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=400V,IC=40A
RG =20Ω,
VGE=±15V,
Inductive Load
TJ=125℃
TJ=150℃
TJ=125℃
TJ=150℃
ISC
Short Circuit Current
tpsc≤6µS , VGE=15V
TJ=125℃,VCC=360V
RthJC Junction to Case Thermal Resistance （ Per IGBT）
Anti-Parallel Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=40A , VGE=0V, TJ =25℃
IF=40A , VGE=0V, TJ =125℃
IF=40A , VGE=0V, TJ =150℃
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=40A , VR=400V
dIF/dt=-800A/μs
TJ =150℃
RthJCD Junction to Case Thermal Resistance （ Per Diode）
2
Min.
4.5
-200
Typ.
5.2
1.75
2.1
2.15
2
180
1.8
95
20
25
25
35
40
40
200
230
240
30
35
35
1.75
1.87
0.85
0.9
230
Max. Unit
6.0
2.25
V
100 µA
10 mA
200 nA
Ω
nC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.65 K /W
Min. Typ. Max. Unit
2.15
2.6
1.85
V
1.75
180
ns
25
A
2.1
µC
0.42
mJ
1.5 K /W
|
80
25℃
60
150℃
40
MM40G3U65B
80
60
40
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
20
VGE=15V
20
TJ=150℃
0
0
1
2
3
4
VCE（V）
Figure 1. Typical Output Characteristics IGBT
80
VCE=20V
60
40
20
25℃
150℃
0
6
7
8
9
10
11
VGE（V）
Figure 3. Typical Transfer characteristics IGBT
6
VCE=400V
5
Rg=20Ω
VGE=±15V
TJ=150℃
4
3
Eon
Eoff
2
1
0
0
20
40
60
80
IC（A）
Figure 5. Switching Energy vs Collector Current IGBT
3
0
0
1
2
3
4
5
VCE（V）
Figure 2. Typical Output Characteristics IGBT
6
VCE=400V
5
IC=40A
VGE=±15V
TJ=150℃
4
3
Eon
Eoff
2
1
0
0
20
40
60
80 100
Rg（Ω）
Figure 4. Switching Energy vs Gate Resistor IGBT
100
80
Rg=20Ω
VGE=±15V
60
TJ=150℃
40
20
0
0 100 200 300 400 500 600 700
VCE（V）
Figure 6. Reverse Biased Safe Operating Area IGBT
|
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |