IGBT. MM40G3U65B Datasheet

MM40G3U65B IGBT. Datasheet pdf. Equivalent

MM40G3U65B Datasheet
Recommendation MM40G3U65B Datasheet
Part MM40G3U65B
Description IGBT
Feature MM40G3U65B; May 2020 Version 01 MM40G3U65B 650V 40A IGBT RoHS Compliant PRODUCT FEATURES □ 650V IGBT chip in .
Manufacture MacMic
Datasheet
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MacMic MM40G3U65B
May 2020
Version 01
MM40G3U65B
650V 40A IGBT
RoHS Compliant
PRODUCT FEATURES
650V IGBT chip in trench FS-technology
Low switching losses
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
1
2
3
1.Gate
2.Collector
3.Emitter
Type
VCES
IC
MM40G3U65B 650V 40A
VCE(sat) TJ=25°C
1.75V
TJmax
175°C
Marking
MM40G3U65B
Package
TO-247
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=100
ICpuls
Pulsed collector current,tp limited by TJmax
Ptot
Power Dissipation Per IGBT
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV) Average Forward Current
TC=25
IFpuls
Diode pulsed current,tp limited by TJmax
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Torque to heatsink
RecommendedM3
Weight
Values
Unit
650
V
±20
61
40
A
120
230
W
650
V
40
A
80
175
-40~175
-55~150
1.1
Nm
8
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com



MacMic MM40G3U65B
MM40G3U65B
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=1.6mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=40A, VGE=15V, TJ=25
IC=40A, VGE=15V, TJ=125
IC=40A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=650V, VGE=0V, TJ=25
VCE=650V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=300V, IC=40A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=400V,IC=40A
RG =20Ω,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
td(off)
Turn off Delay Time
tf
Fall Time
VCC=400V,IC=40A
RG =20Ω,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=400V,IC=40A
RG =20Ω,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc6µS , VGE=15V
TJ=125,VCC=360V
RthJC Junction to Case Thermal Resistance Per IGBT
Anti-Parallel Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=40A , VGE=0V, TJ =25
IF=40A , VGE=0V, TJ =125
IF=40A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=40A , VR=400V
dIF/dt=-800A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
2
Min.
4.5
-200
Typ.
5.2
1.75
2.1
2.15
2
180
1.8
95
20
25
25
35
40
40
200
230
240
30
35
35
1.75
1.87
0.85
0.9
230
Max. Unit
6.0
2.25
V
100 µA
10 mA
200 nA
Ω
nC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.65 K /W
Min. Typ. Max. Unit
2.15
2.6
1.85
V
1.75
180
ns
25
A
2.1
µC
0.42
mJ
1.5 K /W



MacMic MM40G3U65B
80
25
60
150
40
MM40G3U65B
80
60
40
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
20
VGE=15V
20
TJ=150
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT
80
VCE=20V
60
40
20
25
150
0
6
7
8
9
10
11
VGEV
Figure 3. Typical Transfer characteristics IGBT
6
VCE=400V
5
Rg=20Ω
VGE=±15V
TJ=150
4
3
Eon
Eoff
2
1
0
0
20
40
60
80
ICA
Figure 5. Switching Energy vs Collector Current IGBT
3
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT
6
VCE=400V
5
IC=40A
VGE=±15V
TJ=150
4
3
Eon
Eoff
2
1
0
0
20
40
60
80 100
RgΩ
Figure 4. Switching Energy vs Gate Resistor IGBT
100
80
Rg=20Ω
VGE=±15V
60
TJ=150
40
20
0
0 100 200 300 400 500 600 700
VCEV
Figure 6. Reverse Biased Safe Operating Area IGBT





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