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IGBT. MM40G3U120B Datasheet |
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September 2019
Version 03
MM40G3U120B
1200V 40A IGBT
RoHS Compliant
PRODUCT FEATURES
□ IGBT chip in trench FS-technology
□ Low switching losses
□ VCE(sat) with positive temperature coefficient
□ Fast switching and short tail current
□ Free wheeling diodes with fast and soft reverse recovery
APPLICATIONS
□ High frequency switching application
□ Medical applications
□ Motion/servo control
□ UPS systems
1
2
3
1.Gate
2.Collector
3.Emitter
Type
VCES
IC
MM40G3U120B 1200V 40A
VCE(sat) TJ=25°C
1.9V
TJmax
175°C
Marking
MM40G3U120B
Package
TO-247
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25℃
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25℃
TC=110℃
ICpuls
Pulsed collector current,tp limited by TJmax
Ptot
Power Dissipation Per IGBT
VRRM Repetitive Reverse Voltage
TJ=25℃
IF(AV) Average Forward Current
TC=25℃
TC=110℃
IFpuls
Diode pulsed current,tp limited by TJmax
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Torque to heatsink
Recommended（M3）
Weight
Values
Unit
1200
V
±20
65
40
A
160
395
W
1200
V
40
20
A
80
175
-40~175
℃
-55~150
1.1
Nm
8
g
MacMic Science & Technology Co., Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com
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MM40G3U120B
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=1.6mA
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
IC=40A, VGE=15V, TJ=25℃
IC=40A, VGE=15V, TJ=125℃
IC=40A, VGE=15V, TJ=150℃
VCE=1200V, VGE=0V, TJ=25℃
VCE=1200V, VGE=0V, TJ=150℃
VCE=0V,VGE=±20V, TJ=25℃
Qg
Gate Charge
VCE=600V, IC=40A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25℃
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=40A
RG =15Ω,
VGE=±15V,
Inductive Load
TJ=125℃
TJ=150℃
TJ=25℃
TJ=125℃
TJ=150℃
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=40A
RG =15Ω,
VGE=±15V,
Inductive Load
TJ=25℃
TJ=125℃
TJ=150℃
TJ=25℃
TJ=125℃
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=40A
RG =15Ω,
VGE=±15V,
Inductive Load
TJ=150℃
TJ=125℃
TJ=150℃
TJ=125℃
TJ=150℃
ISC
Short Circuit Current
tpsc≤10µS , VGE=15V
TJ=125℃,VCC=600V
RthJC Junction to Case Thermal Resistance （ Per IGBT）
Min.
5.2
-400
Typ.
5.8
1.9
2.3
2.4
0.19
2.5
110
30
35
40
25
30
30
190
230
250
80
100
110
2.6
2.95
2
2.2
260
Max. Unit
6.5
2.35
V
100 µA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.38 K /W
Anti-Parallel Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=40A , VGE=0V, TJ =25℃
IF=40A , VGE=0V, TJ =125℃
IF=40A , VGE=0V, TJ =150℃
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=40A , VR=600V
dIF/dt=-1700A/μs
TJ =150℃
RthJCD Junction to Case Thermal Resistance （ Per Diode）
2
Min. Typ. Max. Unit
2.05 2.55
1.9
V
1.85
110
ns
65
A
6.6
µC
2.5
mJ
1.0 K /W
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80
25℃
60
150℃
40
MM40G3U120B
80
60
40
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
20
VGE=15V
0
0
1
2
3
4
VCE（V）
Figure 1. Typical Output Characteristics IGBT
80
VCE=20V
60
40
20
25℃
150℃
0
6
7
8
9
10
11
VGE（V）
Figure 3. Typical Transfer characteristics IGBT
8
VCE=600V
Rg=15Ω
6
VGE=±15V
TJ=150℃
4
Eon
Eoff
2
0
0
20
40
60
80
IC（A）
Figure 5. Switching Energy vs Collector Current IGBT
3
20
TJ=150℃
0
0
1
2
3
4
5
VCE（V）
Figure 2. Typical Output Characteristics IGBT
12
VCE=600V
IC=40A
9
VGE=±15V
TJ=150℃
6
Eon
Eoff
3
0
0 10 20 30 40 50 60
Rg（Ω）
Figure 4. Switching Energy vs Gate Resistor IGBT
90
75
Rg=15Ω
60
VGE=±15V
TJ=150℃
45
30
15
0
0 200 400 600 800 1000 1200 1400
VCE（V）
Figure 6. Reverse Biased Safe Operating Area IGBT
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