MM40G3U120B

September 2019 Version 03 MM40G3U120B 1200V 40A IGBT RoHS Compliant PRODUCT FEATURES □ IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery APPLICATIONS □ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems 1 2 3 1.Gate 2.Collector 3.Emitter Type VCES IC MM40G3U120B 1200V 40A VCE(sat) TJ=25°C 1.9V TJmax 175°C Marking MM40G3U120B Package TO-247 ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃ TC=110℃ ICpuls Pulsed collector current,tp limited by TJmax Ptot Power Dissipation Per IGBT VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current TC=25℃ TC=110℃ IFpuls Diode pulsed current,tp limited by TJmax TJmax Max. Junction Temperature TJop Operating Temperature Tstg Storage Temperature Torque to heatsink Recommended（M3） Weight Values Unit 1200 V ±20 65 40 A 160 395 W 1200 V 40 20 A 80 175 -40~175 ℃ -55~150 1.1 Nm 8 g MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China 1 Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com MM40G3U120B IGBT ELECTRICAL CHARACTERIS...