IGBT. MM40G3U120BX Datasheet

MM40G3U120BX IGBT. Datasheet pdf. Equivalent

MM40G3U120BX Datasheet
Recommendation MM40G3U120BX Datasheet
Part MM40G3U120BX
Description IGBT
Feature MM40G3U120BX; September 2019 Version 01 MM40G3U120BX 1200V 40A IGBT RoHS Compliant PRODUCT FEATURES □ IGBT chip.
Manufacture MacMic
Datasheet
Download MM40G3U120BX Datasheet





MacMic MM40G3U120BX
September 2019
Version 01
MM40G3U120BX
1200V 40A IGBT
RoHS Compliant
PRODUCT FEATURES
IGBT chip in trench FS-technology
Low switching losses
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
1
2
3
1.Gate
2.Collector
3.Emitter
Type
VCES
IC
MM40G3U120BX 1200V 40A
VCE(sat) TJ=25°C
1.9V
TJmax
175°C
Marking
MM40G3U120BX
Package
TO-247
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=110
ICpuls
Pulsed collector current,tp limited by TJmax
Ptot
Power Dissipation Per IGBT
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV) Average Forward Current
TC=95
IFpuls
Diode pulsed current,tp limited by TJmax
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Torque to heatsink
RecommendedM3
Weight
Values
Unit
1200
V
±20
65
40
A
160
395
W
1200
V
40
A
160
175
-40~175
-55~150
1.1
Nm
8
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com



MacMic MM40G3U120BX
MM40G3U120BX
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=1.6mA
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
IC=40A, VGE=15V, TJ=25
IC=40A, VGE=15V, TJ=125
IC=40A, VGE=15V, TJ=150
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
VCE=0V,VGE=±20V, TJ=25
Qg
Gate Charge
VCE=600V, IC=40A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=40A
RG =15Ω,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=40A
RG =15Ω,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=150
TJ=25
TJ=125
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=40A
RG =15Ω,
VGE=±15V,
Inductive Load
TJ=150
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125,VCC=600V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.2
-400
Typ.
5.8
1.9
2.3
2.4
0.19
2.5
110
30
35
40
25
30
30
190
230
250
80
100
110
2.6
2.95
2
2.2
260
Max. Unit
6.5
2.35
V
100 µA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.38 K /W
Anti-Parallel Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=40A , VGE=0V, TJ =25
IF=40A , VGE=0V, TJ =125
IF=40A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=40A , VR=600V
dIF/dt=-800A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
2
Min. Typ. Max. Unit
1.9
2.4
1.65
V
1.55
380
ns
39
A
7
µC
2.55
mJ
0.7 K /W



MacMic MM40G3U120BX
80
25
60
150
40
MM40G3U120BX
80
60
40
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
20
VGE=15V
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT
80
VCE=20V
60
40
20
25
150
0
6
7
8
9
10
11
VGEV
Figure 3. Typical Transfer characteristics IGBT
8
VCE=600V
Rg=15Ω
6
VGE=±15V
TJ=150
4
Eon
Eoff
2
0
0
20
40
60
80
ICA
Figure 5. Switching Energy vs Collector Current IGBT
3
20
TJ=150
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT
12
VCE=600V
IC=40A
9
VGE=±15V
TJ=150
6
Eon
Eoff
3
0
0 10 20 30 40 50 60
RgΩ
Figure 4. Switching Energy vs Gate Resistor IGBT
90
75
Rg=15Ω
60
VGE=±15V
TJ=150
45
30
15
0
0 200 400 600 800 1000 1200 1400
VCEV
Figure 6. Reverse Biased Safe Operating Area IGBT





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