IGBT. MM60G3U65B Datasheet

MM60G3U65B IGBT. Datasheet pdf. Equivalent

MM60G3U65B Datasheet
Recommendation MM60G3U65B Datasheet
Part MM60G3U65B
Description IGBT
Feature MM60G3U65B; December 2019 Version 01 MM60G3U65B 650V 60A IGBT RoHS Compliant PRODUCT FEATURES □ 650V IGBT chi.
Manufacture MacMic
Datasheet
Download MM60G3U65B Datasheet




MacMic MM60G3U65B
December 2019
Version 01
MM60G3U65B
650V 60A IGBT
RoHS Compliant
PRODUCT FEATURES
650V IGBT chip in trench FS-technology
Low switching losses
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
1
2
3
1.Gate
2.Collector
3.Emitter
Type
VCES
IC
MM60G3U65B 650V 60A
VCE(sat) TJ=25°C
1.8V
TJmax
175°C
Marking
MM60G3U65B
Package
TO-247
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=90
ICpuls
Pulsed collector current,tp limited by TJmax
Ptot
Power Dissipation Per IGBT
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV) Average Forward Current
TC=25
IFpuls
Diode pulsed current,tp limited by TJmax
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Torque to heatsink
RecommendedM3
Weight
Values
Unit
650
V
±20
85
60
A
240
300
W
650
V
60
A
240
175
-40~175
-55~150
1.1
Nm
8
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com



MacMic MM60G3U65B
MM60G3U65B
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=2.0mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=60A, VGE=15V, TJ=25
IC=60A, VGE=15V, TJ=125
IC=60A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=650V, VGE=0V, TJ=25
VCE=650V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Qg
Gate Charge
VCE=400V, IC=60A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=400V,IC=60A
RG =7.5Ω,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
td(off)
Turn off Delay Time
tf
Fall Time
VCC=400V,IC=60A
RG =7.5Ω,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=400V,IC=60A
RG =7.5Ω,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
4.0
-200
Typ.
5.0
1.8
2.05
2.2
260
4.9
145
25
30
30
28
28
30
130
160
170
38
38
42
1.26
1.45
1.04
1.12
Max. Unit
6.0
2.2
V
100 µA
10 mA
200 nA
nC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
0.5 K /W
Anti-Parallel Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=60A , VGE=0V, TJ =25
IF=60A , VGE=0V, TJ =125
IF=60A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=60A , VR=400V
dIF/dt=-2000A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.9
2.4
1.7
V
1.65
130
ns
51
A
3.5
µC
1.1
mJ
1.05 K /W
2



MacMic MM60G3U65B
120
25
90
150
60
30
MM60G3U65B
120
90
60
Vge=15V
Vge=13V
Vge=11V
Vge=9V
Vge=7V
VGE=15V
30
TJ=150
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT
250
VCE=20V
200
150
100
50
25
150
0
5
6
7
8
9 10 11
VGEV
Figure 3. Typical Transfer characteristics IGBT
5
VCE=400V
Rg=7.5Ω
4
VGE=±15V
TJ=150
3
Eon
2
Eoff
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT
8
VCE=400V
IC=60A
6
VGE=±15V
TJ=150
4
Eon
Eoff
2
0
0
20
40
60
80
RgΩ
Figure 4. Switching Energy vs Gate Resistor IGBT
150
120
Rg=7.5Ω
VGE=±15V
90
TJ=150
60
1
30
0
0
30
60
90
120
ICA
Figure 5. Switching Energy vs Collector Current IGBT
3
0
0 100 200 300 400 500 600 700
VCEV
Figure 6. Reverse Biased Safe Operating Area IGBT





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