IGBT. MM75G3T65B Datasheet

MM75G3T65B IGBT. Datasheet pdf. Equivalent

MM75G3T65B Datasheet
Recommendation MM75G3T65B Datasheet
Part MM75G3T65B
Description IGBT
Feature MM75G3T65B; March 2020 Version 01 MM75G3T65B 650V 75A IGBT RoHS Compliant PRODUCT FEATURES □ 650V IGBT chip i.
Manufacture MacMic
Datasheet
Download MM75G3T65B Datasheet





MacMic MM75G3T65B
March 2020
Version 01
MM75G3T65B
650V 75A IGBT
RoHS Compliant
PRODUCT FEATURES
650V IGBT chip in trench FS-technology
Low switching losses
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
1
2
3
1.Gate
2.Collector
3.Emitter
Type
VCES
IC
MM75G3T65B 650V 75A
VCE(sat) TJ=25°C
1.55V
TJmax
175°C
Marking
MM75G3T65B
Package
TO-247
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=100
ICpuls
Pulsed collector current,tp limited by TJmax
Ptot
Power Dissipation Per IGBT
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV) Average Forward Current
TC=75
IFpuls
Diode pulsed current,tp limited by TJmax
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Torque to heatsink
RecommendedM3
Weight
Values
Unit
650
V
±20
115
75
A
225
417
W
650
V
75
A
225
175
-40~175
-55~150
1.1
Nm
8
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com



MacMic MM75G3T65B
MM75G3T65B
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=3.0mA
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
IC=75A, VGE=15V, TJ=25
IC=75A, VGE=15V, TJ=125
IC=75A, VGE=15V, TJ=150
VCE=650V, VGE=0V, TJ=25
VCE=650V, VGE=0V, TJ=150
VCE=0V,VGE=±20V, TJ=25
Qg
Gate Charge
VCE=400V, IC=75A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=400V,IC=75A
RG =7.5Ω,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=400V,IC=75A
RG =7.5Ω,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=150
TJ=25
TJ=125
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=400V,IC=75A
RG =7.5Ω,
VGE=±15V,
Inductive Load
TJ=150
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc5µS , VGE=15V
TJ=150,VCC=400V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
4.8
-200
Typ.
5.6
1.55
1.8
1.9
360
4.4
200
24
26
26
40
42
42
190
220
230
60
90
100
3
3.25
2.52
2.66
395
Max. Unit
6.5
1.95
V
100 µA
10 mA
200 nA
nC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.36 K /W
Anti-Parallel Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=75A , VGE=0V, TJ =25
IF=75A , VGE=0V, TJ =125
IF=75A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=75A , VR=400V
dIF/dt=-1800A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
2
Min. Typ. Max. Unit
1.9
2.4
1.7
V
1.65
162
ns
62
A
5
µC
1.25
mJ
0.7 K /W



MacMic MM75G3T65B
150
25
125
150
100
75
MM75G3T65B
150
125
100
75
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
50
50
TJ=150
25
VGE=15V
25
0
0
1
2
3
VCEV
Figure 1. Typical Output Characteristics IGBT
150
125
VCE=20V
100
75
50
25
25
150
0
6
7
8
9 10 11 12
VGEV
Figure 3. Typical Transfer characteristics IGBT
10
VCE=400V
Rg=7.5Ω
8
VGE=±15V
TJ=150
6
Eon
4
Eoff
2
0
0 25 50 75 100 125 150
ICA
Figure 5. Switching Energy vs Collector Current IGBT
3
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT
25
VCE=400V
20
IC=75A
VGE=±15V
TJ=150
15
Eon
10
Eoff
5
0
0
20
40
60
80
RgΩ
Figure 4. Switching Energy vs Gate Resistor IGBT
175
150
125 Rg=7.5Ω
VGE=±15V
100
TJ=150
75
50
25
0
0 100 200 300 400 500 600 700
VCEV
Figure 6. Reverse Biased Safe Operating Area IGBT





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