Rectifier Diode. MMD200S180B Datasheet

MMD200S180B Diode. Datasheet pdf. Equivalent

MMD200S180B Datasheet
Recommendation MMD200S180B Datasheet
Part MMD200S180B
Description Rectifier Diode
Feature MMD200S180B; JANUARY 2014 MMD200S 200A Rectifier Diode Module Version 04 RoHS Compliant FEATURES □ Low Forwa.
Manufacture MacMic
Datasheet
Download MMD200S180B Datasheet




MacMic MMD200S180B
JANUARY 2014
MMD200S
200A Rectifier Diode Module
Version 04
RoHS Compliant
FEATURES
Low Forward Voltage
High Surge Current Capability
Low Leakage Current
Low Inductance Package
APPLICATIONS
Field Supply For DC Motors
Line Rectifiers For Transistorized AC Motor Controllers
Non-controllable Rectifiers For AC/DC Converter
MODULE TYPE
Circuit Diagram
B
DK
MMD200S120B MMD200S120DK
TYPE
MMD200S140B MMD200S140DK
MMD200S160B MMD200S160DK
MMD200S180B MMD200S180DK
VRRM (Repetitive Peak
Reverse Voltage)
1200
1400
1600
1800
VRSM (Non-Repetitive
Unit
Peak Reverse Voltage)
1300
1500
`V
1700
1900
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
IF(AV)
Average Forward Current
IF(RMS)
IFSM
R.M.S. Forward Current
Non-Repetitive Surge
Forward Current
I2t
I2t (For Fusing)
Test Conditions
Single phase, half wave, 180°conduction,
Tc= 85°C
1/2 cycle, 50HZ, peak value Tc =45°C
1/2 cycle, 60HZ, peak value Tc =45°C
1/2 cycle, 50HZ, peak value Tc =45°C
1/2 cycle, 60HZ, peak value Tc =45°C
PD
TJ
TSTG
VISO
Torque
Torque
RthJ-C
Weight
Power Dissipation
Junction Temperature
Storage Temperature Range
Isolation Breakdown Voltage AC, 50Hz(R.M.S), t=1minute
Module-to-Sink
RecommendedM6
Module Electrodes
RecommendedM6
Junction-to-Case Thermal Resistance
Values
200
310
6500
7000
211.2
203.3
781
-40 to +150
-40 to +125
3000
35
35
0.16
170
Unit
A
KA2s
KA2s
W
°C
°C
V
N.m
N.m
K /W
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com



MacMic MMD200S180B
MMD200S
ELECTRICAL AND THERMAL CHARACTERISTICS TC=25°C unless otherwise specified
Symbol
Parameter
IRM
Max.Reverse Leakage Current
VF
Forward Voltage
VT0
For power-loss calculations only
rT
TJ=125°C
Test Conditions
VR= VRRM
VR= VRRM , TJ=125°C
IF=600A
Min. Typ. Max. Unit
500
µA
10
mA
1.5
V
0.8
V
1.0
m
600
500
400
300
TJ=125°C
200
Max.
100
TJ=25°C
00
0.4 0.8 1.2 1.6 2.0
VFV
Figure1. Forward current vs.voltage drop
7000
6000
5000
4000
50Hz
3000
2000
1000
01
10
100
Cycles
Figure3. Max Non-Repetitive Forward Surge Current
300
240
Single Phase
180
Three-Phase
DC
120
Per Diode
60
00
40
80 120 160 200
IF(AV)A
Figure2. Diode Power dissipation vs. IF(AV)
250
200
150
Single Phase
100
50
0
25
75
125
175
TC°C
Figure4. Forward current vs.Case temperature
-2-



MacMic MMD200S180B
MMD200S
1
0.1
0.01
0.001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
Figure5. Transient Thermal Impedance
Dimensions in Millimeters
Figure6. Package Outline
-3-





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