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PWM Controller. SD4842P Datasheet

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PWM Controller. SD4842P Datasheet






SD4842P Controller. Datasheet pdf. Equivalent




SD4842P Controller. Datasheet pdf. Equivalent





Part

SD4842P

Description

PWM Controller

Manufacture

Silan Microelectronics

Datasheet
Download SD4842P Datasheet


Silan Microelectronics SD4842P

SD4842P; SD4840/4841/4842/4843/4844 CURRENT MODE PWM CONTROLLER WITH BUILT-IN HIGH VOLT AGE MOSFET DESCRIPTION SD4840/4841/484 2/4843/4844 is a current mode PWM contr oller with low standby power and low st art current for power switch. In standb y mode, the circuit enters burst mode t o reduce the standby power dissipation. The switch frequency is 67KHz with ±2 .5 KHz jitter frequ.


Silan Microelectronics SD4842P

ency for low EMI. The stress on transfor mer during power on is reduced by the b uiltin 15ms soft start circuit to avoid the saturation of transformer. SD4840/ 4841/4842/4843/4844 includes under volt age lock-out, over voltage protection, leading edge blanking, over current pro tection and the temperature protection. The circuit will restart automatically until the system .


Silan Microelectronics SD4842P

is normal after the protection is active . FEATURES * Lower start-up current (T yp.6μA) * Frequency jitter for low EMI * Overcurrent protection * Overvoltage protection * Undervoltage lockout * Bu ilt-in temperature protection * Built-i n high voltage MOSFET www.DataShee*t4AU u.ctomrestart mode * Built-in soft star t * Burst mode operation * Cycle by cyc le current limit A.



Part

SD4842P

Description

PWM Controller

Manufacture

Silan Microelectronics

Datasheet
Download SD4842P Datasheet




 SD4842P
SD4840/4841/4842/4843/4844
CURRENT MODE PWM CONTROLLER WITH BUILT-IN HIGH VOLTAGE
MOSFET
DESCRIPTION
SD4840/4841/4842/4843/4844 is a current mode PWM controller
with low standby power and low start current for power switch. In
standby mode, the circuit enters burst mode to reduce the standby
power dissipation.
The switch frequency is 67KHz with ±2.5 KHz jitter frequency for
low EMI.
The stress on transformer during power on is reduced by the built-
in 15ms soft start circuit to avoid the saturation of transformer.
SD4840/4841/4842/4843/4844 includes under voltage lock-out,
over voltage protection, leading edge blanking, over current
protection and the temperature protection. The circuit will restart
automatically until the system is normal after the protection is
active.
FEATURES
* Lower start-up current (Typ.6μA)
* Frequency jitter for low EMI
* Overcurrent protection
* Overvoltage protection
* Undervoltage lockout
* Built-in temperature protection
* Built-in high voltage MOSFET
www.DataShee*t4AUu.ctomrestart mode
* Built-in soft start
* Burst mode operation
* Cycle by cycle current limit
APPLICATIONS
* Switch power
ORDERING INFORMATION
Part No.
Package
Marking
SD4840P67K65
SD4840P67K65
SD4841P67K65
SD4841P67K65
SD4842P67K65
DIP-8-300-2.54
SD4842P67K65
SD4843P67K65
SD4843P67K65
SD4844P67K65
SD4844P67K65
Note: P denotes it is available in DIP8 package, 67k denotes 67KHz, and 65 denotes withstand voltage is 650V.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: //www.silan.com.cn
REV:1.2 2008.12.17
Page 1 of 11





 SD4842P
SD4840/4841/4842/4843/4844
TYPICAL OUPUT POWER CAPABILITY
Device
SD4840P67K65
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
190~265VAC
Adapter
Open
7W
9W
10W
14W
12W
17W
14W
19W
16W
21W
BLOCK DIAGRAM
85~265VAC
Adapter
Open
5W
7.2W
8W
12W
10W
14W
12W
15W
14W
18W
www.DataSheet4U.com
ABSOLUTE MAXIMUM RATING
Characteristics
Drain-Gate Voltage (RGS=1MΩ)
Gate-Source (GND) Voltage
SD4840P67K65
SD4841P67K65
Drain Current Pulse (note1) SD4842P67K65
SD4843P67K65
SD4844P67K65
Symbol
VDGR
VGS
IDM
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: //www.silan.com.cn
Rating
650
±30
4
6
8
11
14
Unit
V
V
A
REV:1.2 2008.12.17
Page 2 of 11





 SD4842P
SD4840/4841/4842/4843/4844
Characteristics
Symbol
SD4840P67K65
SD4841P67K65
Continuous Drain Current
SD4842P67K65
ID
(Tamb=25°C)
SD4843P67K65
SD4844P67K65
SD4840P67K65
SD4841P67K65
Signal Pulse Avalanche
SD4842P67K65
EAS
Energy(note 2)
SD4843P67K65
SD4844P67K65
Power Supply Voltage
VCC,MAX
Analog Input Voltage
VFB
Total Power Dissipation
PD
Darting
Operating Junction Temperature
TJ
Operating Temperature
Tamb
Storage Temperature
TSTG
Note: 1. Pulse width is limited by maximum junction temperature.
2. L=51mH, starting Tj=25°C
Rating
1
1.5
2
3
4
15
30
68
140
200
21
-0.3~ VSD
1.5
0.017
+160
-25~ +85
-55~+150
Unit
A
mJ
V
V
W
W/°C
°C
°C
°C
ELECTRICAL CHARACTERISTICS (sense MOSFET part, unless otherwise specified, Tamb=25°c)
Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
www.DataSheet4U.com
Static Drain-
Source On
Resistance
Input
Capacitance
Output
Capacitance
SD4840P67K65
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
SD4840P67K65
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
SD4840P67K65
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
Symbol
Test conditions
BVDSS VGS=0V, ID=50μA
VDS=Max. VGS=0V
IDSS VDS=0.8Max. VGS=0V
Tamb=125°C
RDS(ON) VGS=10V, ID=0.5A
Ciss VGS=0V, VDS=25V, f=1MHz
Coss VGS=0V, VDS=25V, f=1MHz
Min.
650
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
14.0
8.0
5.0
4.0
3.0
210
250
550
640
840
18
25
38
40
44
Max.
--
50
200
16.8
9.6
6.0
4.8
3.6
--
--
--
--
--
--
--
--
--
--
Unit
V
μA
μA
Ω
pF
pF
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: //www.silan.com.cn
REV:1.2 2008.12.17
Page 3 of 11



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