DatasheetsPDF.com

N-Channel MOSFET. TF12N65 Datasheet

DatasheetsPDF.com

N-Channel MOSFET. TF12N65 Datasheet






TF12N65 MOSFET. Datasheet pdf. Equivalent




TF12N65 MOSFET. Datasheet pdf. Equivalent





Part

TF12N65

Description

12A N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Datasheet
Download TF12N65 Datasheet


Alpha & Omega Semiconductors TF12N65

TF12N65; AOT12N65/AOTF12N65/AOTF12N65L/AOB12N65L 650V, 12A N-Channel MOSFET General Des cription Product Summary The AOT12N65 & AOTF12N65 & AOTF12N65L & AOB12N65L h ave been fabricated using an advanced h igh voltage MOSFET process that is desi gned to deliver high levels of performa nce and robustness in popular ACDC appl ications. By providing low RDS(on), Cis s and Crss along w.


Alpha & Omega Semiconductors TF12N65

ith guaranteed avalanche capability thes e parts can be adopted quickly into new and existing offline power supply desi gns. VDS ID (at VGS=10V) RDS(ON) (at V GS=10V) 100% UIS Tested 100% Rg Tested 750V@150℃ 12A < 0.72W TO-220 Top V iew TO-220F TO-263 D2PAK D D AOT12N 65 S D G Orderable Part Number AOT12N 65 AOTF12N65 AOTF12N65L AOB12N65L AOTF 12N65(L) GD S Pack.


Alpha & Omega Semiconductors TF12N65

age Type TO-220 Pb Free TO-220F Pb Free TO-220F Green TO-263 Green S G G S AOB12N65L Form Tube Tube Tube Tape & Reel Minimum Order Quantity 1000 1000 1000 800 Absolute Maximum Ratings TA=2 5°C unless otherwise noted Parameter Symbol AOT(B)12N65(L) Drain-Source Vo ltage VDS Gate-Source Voltage VGS C ontinuous Drain Current TC=25°C TC=10 0°C ID 12 7.7 Pul.



Part

TF12N65

Description

12A N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Datasheet
Download TF12N65 Datasheet




 TF12N65
AOT12N65/AOTF12N65/AOTF12N65L/AOB12N65L
650V, 12A N-Channel MOSFET
General Description
Product Summary
The AOT12N65 & AOTF12N65 & AOTF12N65L &
AOB12N65L have been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
750V@150
12A
< 0.72W
TO-220
Top View
TO-220F
TO-263
D2PAK
D
D
AOT12N65
S
D
G
Orderable Part Number
AOT12N65
AOTF12N65
AOTF12N65L
AOB12N65L
AOTF12N65(L)
GD S
Package Type
TO-220 Pb Free
TO-220F Pb Free
TO-220F Green
TO-263 Green
S
G
G
S
AOB12N65L
Form
Tube
Tube
Tube
Tape & Reel
Minimum Order Quantity
1000
1000
1000
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT(B)12N65(L)
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TC=25°C
TC=100°C
ID
12
7.7
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
278
2.2
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RqJA
RqCS
AOT(B)12N65(L)
65
0.5
Maximum Junction-to-Case
RqJC
0.45
* Drain current limited by maximum junction temperature.
AOTF12N65
650
±30
12*
7.7*
48
5
375
750
30
5
50
0.4
-55 to 150
300
AOTF12N65
65
--
2.5
AOTF12N65L
12*
7.7*
40
0.3
AOTF12N65L
65
--
3.1
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev.8.0: January 2021
www.aosmd.com
Page 1 of 6





 TF12N65
AOT12N65/AOTF12N65/AOTF12N65L/AOB12N65L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max
Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250μA, VGS=0V, TJ=25°C
ID=250μA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250μA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=650V, VGS=0V
VDS=520V, TJ=125°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250mA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=6A
gFS
Forward Transconductance
VDS=40V, ID=6A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
ISM
Maximum Body-Diode Pulsed Current
650
750
0.72
1
10
±100
3
3.9 4.5
0.57 0.72
17
0.71 1
12
48
V
V/ oC
mA
nA
V
W
S
V
A
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1430 1792 2150
pF
120 152 185
pF
9 11.5 18
pF
1.7 3.5 5.3
W
SWITCHING PARAMETERS
Qg
Total Gate Charge
32 39.8 48
nC
Qgs
Gate Source Charge
VGS=10V, VDS=520V, ID=12A
7.5 9.2 11
nC
Qgd
Gate Drain Charge
13.5 16.8 20
nC
tD(on)
Turn-On DelayTime
36
ns
tr
Turn-On Rise Time
VGS=10V, VDS=325V, ID=12A,
77
ns
tD(off)
Turn-Off DelayTime
RG=25W
120
ns
tf
Turn-Off Fall Time
63
ns
trr
Body Diode Reverse Recovery Time IF=12A,dI/dt=100A/ms,VDS=100V
300 375 450
ns
Qrr
Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/ms,VDS=100V
6
7.5
9
μC
A. The value of R qJA is measured with the device in a still air environment with TA =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsin k, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=5A, VDD=150V, RG=25, Starting TJ=25°C
APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO
PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT
FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE
EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.
AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale
Rev.8.0: January 2021
www.aosmd.com
Page 2 of 6





 TF12N65
AOT12N65/AOTF12N65/AOTF12N65L/AOB12N65L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
24
100
20
10V
6.5V
VDS=40V
-55°C
16
10
6V
12
125°C
8
1
4
VGS=5.5V
25°C
0
0
5
10
15
20
25
30
VDS (Volts)
Figure 1: On-Region Characteristics
0.1
2
4
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
1.2
3
1.0
VGS=10V
0.8
2.5
2
VGS=10V
ID=6A
1.5
0.6
0.4
0
5
10
15
20
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1
0.5
0
-100 -50
0
50
100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.1
1
0.9
0.8
-100 -50
0
50 100 150 200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
1.0E+02
1.0E+01
1.0E+00
125°C
1.0E-01
1.0E2-.022
1.0E-03
25°C
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev.8.0: January 2021
www.aosmd.com
Page 3 of 6



Recommended third-party TF12N65 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)