Document
Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A
VCES 600 V 600 V
IC25 40 A 40 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions
Maximum Ratings
VCES V
CGR
VGES V
GEM
IC25 IC90 I
CM
SSOA (RBSOA)
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GE
=
1
MΩ
Continuous
Transient
TC = 25°C TC = 90°C
T C
= 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µH
P C
TJ TJM T
stg
Md Weight
T C
= 25°C
Mounting torque (M3)
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
600
V
600
V
±20
V
±30
V
40
A
20
A
80
A
ICM = 40
A
@ 0.8 VCES
150
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300
°C
Symbol
BV CES
VGE(th) ICES
I GES
V CE(sat)
Test Conditions
Characteristic Values
(T J
=
25°C,
unless
otherwise
specified)
min. typ. max.
I C
=
250
µA,
V GE
=
0
V
600
IC = 250 µA, VCE = VGE
2.5
VCE = 0.8 • VCES V =0V
GE
TJ = 25°C
T J
=
125°C
V CE
=
0
V,
V GE
=
±20
V
I = I , V = 15 V
C
C90 GE
20N60 20N60A
V 5V
200 µA 1 mA
±100 nA
2.5 V 3.0 V
TO-247 AD (IXGH)
G C E
TO-204 AE (IXGM)
G = Gate, E = Emitter,
C
C = Collector, TAB = Collector
Features l International standard packages l 2nd generation HDMOSTM process l Low V
CE(sat)
- for low on-state conduction losses l High current handling capability l MOS Gate turn-on
- drive simplicity l Voltage rating guaranteed at high
temperature (125°C)
Applications l AC motor speed control l DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) l Switch-mode and resonant-mode
power supplies
Advantages l Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) l High power density
© 1996 IXYS All rights reserved
91511F (3/96)
IXGH 20N60 IXGM 20N60 IXGH 20N60A IXGM 20N60A
Symbol
gfs
Cies Coes C
res
Q g
Qge Qgc td(on) t
ri
td(off) tfi Eoff td(on) t
ri
Eon td(off) t
fi
Eoff
RthJC RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES, RG = Roff = 82 Ω Switching times may increase
for VCE (Clamp) > 0.8 • VCES, 20N60A higher TJ or increased RG 20N60A
Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 82 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG
20N60 20N60A
20N60 20N60A
6 14
S
1500
pF
200
pF
40
pF
100 120 nC 20 30 nC 60 90 nC
100
ns
200
ns
600
ns
200
ns
1.5
mJ
100
ns
200
ns
2
mJ
900 1500 ns
530 2000 ns 250 600 ns
3.2
mJ
2.0
mJ
0.83 K/W
0.25
K/W
TO-247 AD Outline
1 = Gate 2 = Collector 3 = Emitter Tab = Collector
TO-204AE Outline
IXGH 20N60 and IXGH 20N60A characteristic curves are located on the IXGH 20N60U1 and IXGH 20N60AU1 .