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IGBT. MMG10CB120X6TC Datasheet

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IGBT. MMG10CB120X6TC Datasheet






MMG10CB120X6TC IGBT. Datasheet pdf. Equivalent




MMG10CB120X6TC IGBT. Datasheet pdf. Equivalent





Part

MMG10CB120X6TC

Description

IGBT



Feature


November 2019 MMG10CB120X6TC Version 0 1 1200V 10A Six-Pack Module RoHS Compl iant PRODUCT FEATURES □ IGBT CHIP(Tr ench+Field Stop technology) □ Substra te for Low Thermal Resistance □ Low s aturation voltage and positive temperat ure coefficient □ Fast switching and short tail current □ Free wheeling di odes with fast and soft reverse recover y □ Solder Contact Technolog.
Manufacture

MacMic

Datasheet
Download MMG10CB120X6TC Datasheet


MacMic MMG10CB120X6TC

MMG10CB120X6TC; y, Rugged mounting due to integrated Mou nting clamps □ Temperature sense incl uded APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter a nd power supplies IGBT-inverter ABSOL UTE MAXIMUM RATINGS(T C =25°C unless o therwise specified) Symbol Parameter/ Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter V oltage IC DC Collector Curr.


MacMic MMG10CB120X6TC

ent TC=25℃, TJmax=175℃ TC=105℃, T Jmax=175℃ ICM Repetitive Peak Colle ctor Current tp=1ms Ptot Power Dissi pation Per IGBT TC=25℃, TJmax=175℃ Values Unit 1200 V ±20 19 10 A 20 107 W Diode-inverter ABSOLUTE M AXIMUM RATINGS (T C =25°C unless other wise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Vo ltage TJ=25℃ IF(AV) Average F.


MacMic MMG10CB120X6TC

orward Current IFRM Repetitive Peak Fo rward Current tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values Unit 1200 V 10 A 20 18 A2S MacMic Science & Tech nology Co., Ltd. Add:#18, Hua Shan Zh ong Lu, New District, Changzhou City, J iangsu Province, P. R .of China Tel.: +86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website:www.macmi cst.com 1 MMG10CB120X6TC IGB.

Part

MMG10CB120X6TC

Description

IGBT



Feature


November 2019 MMG10CB120X6TC Version 0 1 1200V 10A Six-Pack Module RoHS Compl iant PRODUCT FEATURES □ IGBT CHIP(Tr ench+Field Stop technology) □ Substra te for Low Thermal Resistance □ Low s aturation voltage and positive temperat ure coefficient □ Fast switching and short tail current □ Free wheeling di odes with fast and soft reverse recover y □ Solder Contact Technolog.
Manufacture

MacMic

Datasheet
Download MMG10CB120X6TC Datasheet




 MMG10CB120X6TC
November 2019
MMG10CB120X6TC
Version 01
1200V 10A Six-Pack Module
RoHS Compliant
PRODUCT FEATURES
IGBT CHIP(Trench+Field Stop technology)
Substrate for Low Thermal Resistance
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Solder Contact Technology, Rugged mounting due to integrated
Mounting clamps
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25, TJmax=175
TC=105, TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1200
V
±20
19
10
A
20
107
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
1200
V
10
A
20
18
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1




 MMG10CB120X6TC
MMG10CB120X6TC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=0.25mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=10A, VGE=15V, TJ=25
IC=10A, VGE=15V, TJ=125
IC=10A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=10A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=10A
RG =50,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=10A
RG =50,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=10A
RG =50,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=150,VCC=800V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-400
Typ.
5.8
1.85
2.15
2.25
0
0.08
0.8
35
20
25
25
22
24
24
150
180
210
180
215
225
1.15
1.25
0.69
0.72
40
1.25
Max. Unit
6.5
2.25
V
100 µA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
1.4 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=10A , VGE=0V, TJ =25
VF
Forward Voltage
IF=10A , VGE=0V, TJ =125
IF=10A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=10A , VR=600V
dIF/dt=-500A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.95 2.45
1.55
V
1.5
161
ns
15
A
1.6
µC
0.57
mJ
1.75
1.9 K /W
2




 MMG10CB120X6TC
MMG10CB120X6TC
NTC CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
R25
Resistance
TC =25
B25/50 R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
Min. Typ. Max. Unit
5
K
3375
K
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
F
Mounting Force Per Clamp
Weight
Values
Unit
175
-40~150
-40~125
3000
V
>200
20~50
N
25
g
20
25
150
15
10
5
VGE=15V
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT-inverter
3
20
Vge=17V
Vge=15V
15
Vge=13V
Vge=11V
10
Vge=9V
5
TJ=150
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT-inverter






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