DatasheetsPDF.com

IGBT. MMG15CB120X6TC Datasheet

DatasheetsPDF.com

IGBT. MMG15CB120X6TC Datasheet







MMG15CB120X6TC IGBT. Datasheet pdf. Equivalent




MMG15CB120X6TC IGBT. Datasheet pdf. Equivalent





Part

MMG15CB120X6TC

Description

IGBT

Manufacture

MacMic

Datasheet
Download MMG15CB120X6TC Datasheet


MacMic MMG15CB120X6TC

MMG15CB120X6TC; November 2019 MMG15CB120X6TC Version 0 1 1200V 15A Six-Pack Module RoHS Compl iant PRODUCT FEATURES □ IGBT CHIP(Tr ench+Field Stop technology) □ Substra te for Low Thermal Resistance □ Low s aturation voltage and positive temperat ure coefficient □ Fast switching and short tail current □ Free wheeling di odes with fast and soft reverse recover y □ Solder Contact Technolog.


MacMic MMG15CB120X6TC

y, Rugged mounting due to integrated Mou nting clamps □ Temperature sense incl uded APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter a nd power supplies IGBT-inverter ABSOL UTE MAXIMUM RATINGS(T C =25°C unless o therwise specified) Symbol Parameter/ Test Conditions VCES VGES Collector E mitter Voltage Gate Emitter Voltage TJ =25℃ IC DC Collector Curr.


MacMic MMG15CB120X6TC

ent ICM Repetitive Peak Collector Curr ent TC=25℃, TJmax=175℃ TC=105℃, TJmax=175℃ tp=1ms Ptot Power Dissip ation Per IGBT TC=25℃, TJmax=175℃ Values Unit 1200 V ±20 27 15 A 30 130 W Diode-inverter ABSOLUTE MA XIMUM RATINGS (T C =25°C unless otherw ise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Vol tage TJ=25℃ IF(AV) Average Fo.



Part

MMG15CB120X6TC

Description

IGBT

Manufacture

MacMic

Datasheet
Download MMG15CB120X6TC Datasheet




 MMG15CB120X6TC
November 2019
MMG15CB120X6TC
Version 01
1200V 15A Six-Pack Module
RoHS Compliant
PRODUCT FEATURES
IGBT CHIP(Trench+Field Stop technology)
Substrate for Low Thermal Resistance
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Solder Contact Technology, Rugged mounting due to integrated
Mounting clamps
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25, TJmax=175
TC=105, TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1200
V
±20
27
15
A
30
130
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
1200
V
15
A
30
18
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1





 MMG15CB120X6TC
MMG15CB120X6TC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=0.38mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=15A, VGE=15V, TJ=25
IC=15A, VGE=15V, TJ=125
IC=15A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=15A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=15A
RG =30,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=15A
RG =30,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=15A
RG =30,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=150,VCC=800V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-400
Typ.
5.8
1.85
2.15
2.25
0
0.105
1.1
50
20
25
25
22
24
24
180
210
240
160
195
220
1.71
1.92
1.12
1.21
60
1.05
Max. Unit
6.5
2.25
V
100 µA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
1.15 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=15A , VGE=0V, TJ =25
VF
Forward Voltage
IF=15A , VGE=0V, TJ =125
IF=15A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=15A , VR=600V
dIF/dt=-800A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
2.1
2.65
1.75
V
1.7
220
ns
25
A
2.6
µC
0.75
mJ
1.75
1.9 K /W
2





 MMG15CB120X6TC
MMG15CB120X6TC
NTC CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
R25
Resistance
TC =25
B25/50 R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
Min. Typ. Max. Unit
5
K
3375
K
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
F
Mounting Force Per Clamp
Weight
Values
Unit
175
-40~150
-40~125
3000
V
>200
20~50
N
25
g
30
25
25
150
20
15
10
5
VGE=15V
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT-inverter
3
30
Vge=17V
25
Vge=15V
Vge=13V
20
Vge=11V
15
Vge=9V
10
5
TJ=150
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT-inverter



Recommended third-party MMG15CB120X6TC Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)