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MMG25CE120XB6TC Dataheets PDF



Part Number MMG25CE120XB6TC
Manufacturers MacMic
Logo MacMic
Description PIM
Datasheet MMG25CE120XB6TC DatasheetMMG25CE120XB6TC Datasheet (PDF)

November 2019 MMG25CE120XB6TC Version 01 1200V 25A PIM Module RoHS Compliant PRODUCT FEATURES □ Substrate for Low Thermal Resistance □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Solder Contact Technology, Rugged mounting due to integrated Mounting clamps □ Temperature sense included APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies Rectifie.

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November 2019 MMG25CE120XB6TC Version 01 1200V 25A PIM Module RoHS Compliant PRODUCT FEATURES □ Substrate for Low Thermal Resistance □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Solder Contact Technology, Rugged mounting due to integrated Mounting clamps □ Temperature sense included APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies Rectifier+Brake+Inverter IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃, TJmax=175℃ TC=100℃, TJmax=175℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT TC=25℃, TJmax=175℃ Values Unit 1200 V ±20 39 25 A 50 176 W Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t tp=1ms TJ =125℃, t=10ms, VR=0V Values Unit 1200 V 25 A 50 110 A2S MacMic Science & Technology Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China 1 Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website:www.macmicst.com MMG25CE120XB6TC IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VGE(th) Gate Emitter Threshold Voltage VCE(sat) Collector Emitter Saturation Voltage ICES Collector Leakage Current IGES Gate Leakage Current VCE=VGE, IC=0.8mA IC=25A, VGE=15V, TJ=25℃ IC=25A, VGE=15V, TJ=125℃ IC=25A, VGE=15V, TJ=150℃ VCE=1200V, VGE=0V, TJ=25℃ VCE=0V,VGE=±20V, TJ=25℃ Rgint Integrated Gate Resistor Qg Gate Charge VCE=600V, IC=25A , VGE=15V Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn on Delay Time tr Rise Time td(off) Turn off Delay Time tf Fall Time Eon Turn on Energy Eoff Turn off Energy VCE=25V, VGE=0V, f =1MHz VCC=600V,IC=25A, RG =20Ω, VGE=±15V, Inductive Load VCC=600V,IC=25A, RG =20Ω, VGE=±15V, Inductive Load VCC=600V,IC=25A, RG =20Ω, VGE=±15V, Inductive Load TJ=25℃ TJ=150℃ TJ=25℃ TJ=150℃ TJ=25℃ TJ=150℃ TJ=25℃ TJ=150℃ TJ=25℃ TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃ TJ=150℃ ISC Short Circuit Current tpsc≤10µS , VGE=15V TJ=150℃,VCC=800V RthJC Junction to Case Thermal Resistance ( Per IGBT) Min. 5.0 -400 Typ. 5.8 1.85 2.15 2.25 0 0.166 2 90 20 25 24 26 210 270 190 230 1.85 2.6 3 1.41 2.1 2.3 100 0.75 Max. Unit 6.5 2.25 V 1 mA 400 nA Ω µC nF pF ns ns ns ns ns ns ns ns mJ mJ mJ mJ mJ mJ A 0.85 K /W Diode-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol VF Forward Voltage Parameter/Test Conditions IF=25A , VGE=0V, TJ =25℃ IF=25A , VGE=0V, TJ =125℃ IF=25A , VGE=0V, TJ =150℃ trr Reverse Recovery Time IRRM Max. Reverse Recovery Current QRR Reverse Recovery Charge Erec Reverse Recovery Energy IF=25A , VR=600V dIF/dt=-1100A/μs TJ =150℃ RthJCD Junction to Case Thermal Resistance (Per Diode) Min. Typ. Max. Unit 1.95 2.45 1.55 V 1.5 264 ns 37 A 4.4 µC 1.35 mJ 1.1 1.2 K /W 2 MMG25CE120XB6TC Diode-RECTIFIER ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IFRMS IRMS R.M.S. Forward Current Per Diode R.M.S. Current at rectifier output TC=100℃ IFSM Non Repetitive Surge Forward Current TJ=45℃, t=10ms, 50Hz TJ=45℃, t=8.3ms, 60Hz I2t TJ=45℃, t=10ms, 50Hz TJ=45℃, t=8.3ms, 60Hz Values Unit 1600 V 60 60 A 480 527 1152 A2S 1152 Diode-RECTIFIER ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VF Forward Voltage IR Reverse Leakage Current IF=25A , TJ =25℃ IF=25A , TJ =150℃ VR=1600V, TJ=25℃ VR=1600V, TJ=150℃ RthJCD Junction to Case Thermal Resistance ( Per Diode) Min. Typ. 1.0 0.91 50 1 0.8 Max. Unit 1.2 V 500 µA 10 mA 0.9 K /W IGBT-Brake chopper ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES IC Gate Emitter Voltage DC Collector Current TC=25℃, TJmax=175℃ TC=100℃, TJmax=175℃ ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT tp=1ms TC=25℃, TJmax=175℃ Values Unit 1200 V ±20 39 25 A 50 176 W Diode-Brake chopper ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t tp=1ms TJ=125℃, t=10ms, VR=0V Values Unit 1.


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