Document
November 2019
MMG25CE120XB6TC
Version 01
1200V 25A PIM Module RoHS Compliant
PRODUCT FEATURES
□ Substrate for Low Thermal Resistance □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Solder Contact Technology, Rugged mounting due to integrated Mounting clamps □ Temperature sense included
APPLICATIONS
□ AC motor control □ Motion/servo control □ Inverter and power supplies
Rectifier+Brake+Inverter
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25℃
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25℃, TJmax=175℃ TC=100℃, TJmax=175℃
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25℃, TJmax=175℃
Values
Unit
1200 V
±20
39
25
A
50
176
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25℃
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms TJ =125℃, t=10ms, VR=0V
Values
Unit
1200
V
25 A
50
110
A2S
MacMic Science & Technology Co., Ltd.
Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website:www.macmicst.com
MMG25CE120XB6TC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE(sat)
Collector Emitter Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=VGE, IC=0.8mA IC=25A, VGE=15V, TJ=25℃ IC=25A, VGE=15V, TJ=125℃ IC=25A, VGE=15V, TJ=150℃ VCE=1200V, VGE=0V, TJ=25℃ VCE=0V,VGE=±20V, TJ=25℃
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=25A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=25A, RG =20Ω, VGE=±15V, Inductive Load
VCC=600V,IC=25A, RG =20Ω, VGE=±15V, Inductive Load
VCC=600V,IC=25A, RG =20Ω, VGE=±15V, Inductive Load
TJ=25℃ TJ=150℃ TJ=25℃ TJ=150℃ TJ=25℃ TJ=150℃ TJ=25℃ TJ=150℃ TJ=25℃ TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃ TJ=150℃
ISC
Short Circuit Current
tpsc≤10µS , VGE=15V TJ=150℃,VCC=800V
RthJC Junction to Case Thermal Resistance ( Per IGBT)
Min. 5.0
-400
Typ. 5.8 1.85 2.15 2.25
0 0.166
2 90 20 25 24 26 210 270 190 230 1.85 2.6 3 1.41 2.1 2.3
100
0.75
Max. Unit 6.5 2.25
V
1
mA
400 nA
Ω
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
A
0.85 K /W
Diode-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
VF
Forward Voltage
Parameter/Test Conditions IF=25A , VGE=0V, TJ =25℃ IF=25A , VGE=0V, TJ =125℃ IF=25A , VGE=0V, TJ =150℃
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=25A , VR=600V dIF/dt=-1100A/μs TJ =150℃
RthJCD Junction to Case Thermal Resistance (Per Diode)
Min. Typ. Max. Unit 1.95 2.45
1.55
V
1.5
264
ns
37
A
4.4
µC
1.35
mJ
1.1
1.2 K /W
2
MMG25CE120XB6TC
Diode-RECTIFIER ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25℃
IFRMS IRMS
R.M.S. Forward Current Per Diode R.M.S. Current at rectifier output
TC=100℃
IFSM
Non Repetitive Surge Forward Current
TJ=45℃, t=10ms, 50Hz TJ=45℃, t=8.3ms, 60Hz
I2t
TJ=45℃, t=10ms, 50Hz TJ=45℃, t=8.3ms, 60Hz
Values
Unit
1600
V
60
60 A
480
527
1152 A2S
1152
Diode-RECTIFIER
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IR
Reverse Leakage Current
IF=25A , TJ =25℃ IF=25A , TJ =150℃ VR=1600V, TJ=25℃ VR=1600V, TJ=150℃
RthJCD Junction to Case Thermal Resistance ( Per Diode)
Min.
Typ. 1.0 0.91 50 1 0.8
Max. Unit 1.2
V
500 µA 10 mA 0.9 K /W
IGBT-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25℃
VGES IC
Gate Emitter Voltage DC Collector Current
TC=25℃, TJmax=175℃ TC=100℃, TJmax=175℃
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
tp=1ms TC=25℃, TJmax=175℃
Values
Unit
1200 V
±20
39
25
A
50
176
W
Diode-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25℃
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms TJ=125℃, t=10ms, VR=0V
Values
Unit
1.