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PIM. MMG25H120XB6TC Datasheet

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PIM. MMG25H120XB6TC Datasheet






MMG25H120XB6TC PIM. Datasheet pdf. Equivalent




MMG25H120XB6TC PIM. Datasheet pdf. Equivalent





Part

MMG25H120XB6TC

Description

PIM



Feature


June 2020 MMG25H120XB6TC Preliminary 1200V 25A PIM Module RoHS Compliant PR ODUCT FEATURES □ Substrate for Low Th ermal Resistance □ Low saturation vol tage and positive temperature coefficie nt □ Fast switching and short tail cu rrent □ Free wheeling diodes with fas t and soft reverse recovery □ Solder Contact Technology, Rugged mounting due to integrated Mounting clam.
Manufacture

MacMic

Datasheet
Download MMG25H120XB6TC Datasheet


MacMic MMG25H120XB6TC

MMG25H120XB6TC; ps □ Temperature sense included APPLIC ATIONS □ AC motor control □ Motion/ servo control □ Inverter and power su pplies Rectifier+Brake+Inverter IGBT- inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Sym bol Parameter/Test Conditions VCES VG ES Collector Emitter Voltage Gate Emit ter Voltage TJ=25℃ IC DC Collector Current ICM Repetitive Pea.


MacMic MMG25H120XB6TC

k Collector Current TC=25℃, TJmax=175 ℃ TC=100℃, TJmax=175℃ tp=1ms Pto t Power Dissipation Per IGBT TC=25℃ , TJmax=175℃ Values Unit 1200 V ± 20 39 25 A 50 157 W Diode-invert er ABSOLUTE MAXIMUM RATINGS (T C =25° C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetit ive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Rep.


MacMic MMG25H120XB6TC

etitive Peak Forward Current tp=1ms I2 t TJ =125℃, t=10ms, VR=0V Values U nit 1200 V 25 A 50 110 A2S MacMic Science & Technology Co., Ltd. Add: #18, Hua Shan Zhong Lu, New District, C hangzhou City, Jiangsu Province, P. R . of China 1 Tel.:+86-519-85163708 Fa x:+86-519-85162291 Post Code:213022 Website :www.macmicst.com MMG25H120 XB6TC IGBT-inverter ELECTRIC.

Part

MMG25H120XB6TC

Description

PIM



Feature


June 2020 MMG25H120XB6TC Preliminary 1200V 25A PIM Module RoHS Compliant PR ODUCT FEATURES □ Substrate for Low Th ermal Resistance □ Low saturation vol tage and positive temperature coefficie nt □ Fast switching and short tail cu rrent □ Free wheeling diodes with fas t and soft reverse recovery □ Solder Contact Technology, Rugged mounting due to integrated Mounting clam.
Manufacture

MacMic

Datasheet
Download MMG25H120XB6TC Datasheet




 MMG25H120XB6TC
June 2020
MMG25H120XB6TC
Preliminary
1200V 25A PIM Module
RoHS Compliant
PRODUCT FEATURES
Substrate for Low Thermal Resistance
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Solder Contact Technology, Rugged mounting due to integrated
Mounting clamps
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Rectifier+Brake+Inverter
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25, TJmax=175
TC=100, TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1200
V
±20
39
25
A
50
157
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
1200
V
25
A
50
110
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




 MMG25H120XB6TC
MMG25H120XB6TC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=0.8mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=25A, VGE=15V, TJ=25
IC=25A, VGE=15V, TJ=125
IC=25A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=25A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=25A
RG =30,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=25A
RG =30,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=25A
RG =30,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125,VCC=800V
RthJC Junction to Case Thermal Resistance (Per IGBT)
Min.
5.0
-400
Typ.
5.8
1.85
2.15
2.2
0
0.16
1.9
85
35
40
40
40
45
45
220
270
280
160
210
230
3.3
3.5
2.2
2.3
110
Max. Unit
6.5
2.3
V
1
mA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.95 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=25A , VGE=0V, TJ =25
VF
Forward Voltage
IF=25A , VGE=0V, TJ =125
IF=25A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=25A , VR=600V
dIF/dt=-450A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
2
Min. Typ. Max. Unit
1.75
2.3
1.52
V
1.45
590
ns
23
A
5.9
µC
2
mJ
1.4 K /W




 MMG25H120XB6TC
MMG25H120XB6TC
Diode-RECTIFIER
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current Per Diode
IFRMS R.M.S. Forward Current Per Diode
TC=80
IRMS
R.M.S. Current at rectifier output
Non Repetitive Surge
IFSM
Forward Current
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
I2t
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
Values
Unit
1600
V
50
70
80
A
480
527
1152
1152
A2S
Diode-RECTIFIER
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=25A , TJ =25
IF=25A , TJ =150
IR
Reverse Leakage Current
VR=1600V, TJ=25
VR=1600V, TJ=150
RthJCD Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1
0.91
Max.
1.15
50
1
0.8
Unit
V
V
µA
mA
K /W
IGBT-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25, TJmax=175
TC=105, TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1200
V
±20
25
15
A
30
107
W
Diode-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ=125, t=10ms, VR=0V
Values
Unit
1200
V
10
A
20
25
A2S
3






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