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Rectifier+Inverter. MMG35HD120XT6TC Datasheet

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Rectifier+Inverter. MMG35HD120XT6TC Datasheet






MMG35HD120XT6TC Rectifier+Inverter. Datasheet pdf. Equivalent




MMG35HD120XT6TC Rectifier+Inverter. Datasheet pdf. Equivalent





Part

MMG35HD120XT6TC

Description

Rectifier+Inverter



Feature


August 2018 MMG35HD120XT6TC 1200V 35A Rectifier+Inverter Module Preliminary RoHS Compliant PRODUCT FEATURES □ H igh level of integration □ IGBT CHIP( Trench+Field Stop technology) □ Low s aturation voltage and positive temperat ure coefficient □ Fast switching and short tail current □ Free wheeling di odes with fast and soft reverse recover y □ Industry standard packag.
Manufacture

MacMic

Datasheet
Download MMG35HD120XT6TC Datasheet


MacMic MMG35HD120XT6TC

MMG35HD120XT6TC; e with insulated copper base plate and s oldering pins for PCB mounting □ Temp erature sense included APPLICATIONS □ AC motor control □ Motion/servo cont rol □ Inverter and power supplies Re ctifier+Inverter IGBT-inverter ABSOLU TE MAXIMUM RATINGS(T C =25°C unless ot herwise specified) Symbol Parameter/T est Conditions VCES VGES Collector Em itter Voltage Gate Emitter .


MacMic MMG35HD120XT6TC

Voltage TJ=25℃ IC DC Collector Curr ent ICM Repetitive Peak Collector Cur rent TC=25℃, TJmax=175℃ TC=100℃, TJmax=175℃ tp=1ms Ptot Power Dissi pation Per IGBT TC=25℃, TJmax=175℃ Values Unit 1200 V ±20 54 35 A 70 208 W Diode-inverter ABSOLUTE M AXIMUM RATINGS (T C =25°C unless other wise specified) Symbol Parameter/Test Conditions VRRM Repetitive Rever.


MacMic MMG35HD120XT6TC

se Voltage TJ=25℃ IF(AV) Average Fo rward Current IFRM Repetitive Peak Fo rward Current tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values Unit 1200 V 35 A 70 250 A2S MacMic Science & Tec hnology Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China 1 T el.:+86-519-85163708 Fax:+86-519-85 162291 Post Code:213022 Webs.

Part

MMG35HD120XT6TC

Description

Rectifier+Inverter



Feature


August 2018 MMG35HD120XT6TC 1200V 35A Rectifier+Inverter Module Preliminary RoHS Compliant PRODUCT FEATURES □ H igh level of integration □ IGBT CHIP( Trench+Field Stop technology) □ Low s aturation voltage and positive temperat ure coefficient □ Fast switching and short tail current □ Free wheeling di odes with fast and soft reverse recover y □ Industry standard packag.
Manufacture

MacMic

Datasheet
Download MMG35HD120XT6TC Datasheet




 MMG35HD120XT6TC
August 2018
MMG35HD120XT6TC
1200V 35A Rectifier+Inverter Module
Preliminary
RoHS Compliant
PRODUCT FEATURES
High level of integration
IGBT CHIP(Trench+Field Stop technology)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Rectifier+Inverter
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25, TJmax=175
TC=100, TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1200
V
±20
54
35
A
70
208
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
1200
V
35
A
70
250
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




 MMG35HD120XT6TC
MMG35HD120XT6TC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=1.2mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=35A, VGE=15V, TJ=25
IC=35A, VGE=15V, TJ=125
IC=35A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=35A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=35A
RG =20,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=35A
RG =20,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=35A
RG =20,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=150,VCC=600V
RthJC Junction to Case Thermal Resistance (Per IGBT)
Min.
5.0
-400
Typ.
5.8
1.85
2.15
2.25
0
0.21
2.8
110
35
40
40
35
40
40
240
280
300
190
210
230
4.5
4.7
3.3
3.5
145
Max. Unit
6.5
2.25
V
1
mA
10
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.72 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=35A , VGE=0V, TJ =25
VF
Forward Voltage
IF=35A , VGE=0V, TJ =125
IF=35A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=35A , VR=600V
dIF/dt=-850A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
2
Min. Typ. Max. Unit
1.8
2.25
1.6
V
1.55
390
ns
40
A
6.1
µC
2
mJ
1.05 K /W




 MMG35HD120XT6TC
MMG35HD120XT6TC
Diode-RECTIFIER
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current Per Diode
IFRMS R.M.S. Forward Current Per Diode
TC=80
IRMS
R.M.S. Current at rectifier output
Non Repetitive Surge
IFSM
Forward Current
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
I2t
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
Values
Unit
1600
V
50
75
80
A
480
527
1152
1152
A2S
Diode-RECTIFIER
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=35A , TJ =25
IF=35A , TJ =150
IR
Reverse Leakage Current
VR=1600V, TJ=25
VR=1600V, TJ=150
RthJCD Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.05
0.98
Max.
1.2
50
1
0.8
Unit
V
V
µA
mA
K /W
3






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