Document
August 2018
PRODUCT FEATURES
□ High level of integration □ IGBT CHIP(Trench+Field Stop technology) □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Industry standard package with insulated copper base plate and soldering pins for PCB mounting □ Temperature sense included
APPLICATIONS
□ AC motor control □ Motion/servo control □ Inverter and power supplies
MMG40H120XB6TC
Version 01
1200V 40A PIM Module RoHS Compliant
Rectifier+Brake+Inverter
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES VGES
Collector Emitter Voltage Gate Emitter Voltage
TJ=25℃
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25℃, TJmax=175℃ TC=85℃, TJmax=175℃ tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25℃, TJmax=175℃
Values
Unit
1200 V
±20
55
40
A
80
208
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25℃
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125℃, t=10ms, VR=0V
Values
Unit
1200
V
40 A
80
250
A2S
MacMic Science & Technology Co., Ltd.
Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website:www.macmicst.com
1
MMG40H120XB6TC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=1.6mA
VCE(sat)
Collector Emitter Saturation Voltage
IC=40A, VGE=15V, TJ=25℃ IC=40A, VGE=15V, TJ=125℃ IC=40A, VGE=15V, TJ=150℃
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25℃ VCE=1200V, VGE=0V, TJ=150℃
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25℃
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=40A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25℃
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=40A RG =20Ω, VGE=±15V, Inductive Load
TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃
TJ=150℃
TJ=25℃
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=40A RG =20Ω, VGE=±15V, Inductive Load
TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃
TJ=150℃
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=40A RG =20Ω, VGE=±15V, Inductive Load
TJ=125℃ TJ=150℃ TJ=125℃ TJ=150℃
ISC
Short Circuit Current
tpsc≤10µS , VGE=15V TJ=150℃,VCC=600V
RthJC
Junction to Case Thermal Resistance (Per IGBT)
Diode-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=40A , VGE=0V, TJ=25℃
VF
Forward Voltage
IF=40A , VGE=0V, TJ=125℃
IF=40A , VGE=0V, TJ=150℃
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=40A , VR=600V dIF/dt=-1000A/μs TJ =150℃
RthJCD Junction to Case Thermal Resistance ( Per Diode)
Min. 5.0
-400
Typ. 5.8 1.95 2.3 2.4
0 0.22 2.8 110 20 25 30 40 45 45 180 220 240 170 200 220 5.4 5.8 3.35 3.55
145
Max. Unit 6.5 2.35
V
1 mA
10 400 nA
Ω nC nF pF ns ns ns ns ns ns ns ns ns ns ns ns mJ mJ mJ mJ
A
0.72 K /W
Min.
Typ.
Max. Unit
1.85
2.3
1.65
V
1.60
350
ns
45
A
6.5
µC
2
mJ
1.05 K /W
2
MMG40H120XB6TC
Diode-RECTIFIER ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25℃
IF(AV)
Average Forward Current Per Diode
IFRMS R.M.S. Forward Current Per Diode
TC=80℃
IRMS
R.M.S. Current at rectifier output
Non Repetitive Surge
IFSM
Forward Current
TJ=45℃, t=10ms, 50Hz TJ=45℃, t=8.3ms, 60Hz
I2t
TJ=45℃, t=10ms, 50Hz TJ=45℃, t=8.3ms, 60Hz
Diode-RECTIFIER
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=40A , TJ =25℃ IF=40A , TJ =150℃
IR
Reverse Leakage Current
VR=1600V, TJ=25℃ VR=1600V, TJ=150℃
RthJCD Junction to Case Thermal Resistance ( Per Diode)
IGBT-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25℃
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25℃, TJmax=175℃ TC=100℃, TJmax=175℃
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25℃, TJmax=175℃
Values
Unit
1600
V
50
75
80
A
480
527
1152 1152
A2S
Min. Typ. Max. Unit
1.06
1.2
V
1.00
V
50
µA
1
mA
0.8 K /W
Values
Unit
1200 V
±20
39
25
A
50
166
W
Diode-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Revers.