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MMG40H120XB6TC Dataheets PDF



Part Number MMG40H120XB6TC
Manufacturers MacMic
Logo MacMic
Description IGBT
Datasheet MMG40H120XB6TC DatasheetMMG40H120XB6TC Datasheet (PDF)

August 2018 PRODUCT FEATURES □ High level of integration □ IGBT CHIP(Trench+Field Stop technology) □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Industry standard package with insulated copper base plate and soldering pins for PCB mounting □ Temperature sense included APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies MMG40H120XB6TC Version 01 .

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August 2018 PRODUCT FEATURES □ High level of integration □ IGBT CHIP(Trench+Field Stop technology) □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Industry standard package with insulated copper base plate and soldering pins for PCB mounting □ Temperature sense included APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies MMG40H120XB6TC Version 01 1200V 40A PIM Module RoHS Compliant Rectifier+Brake+Inverter IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES VGES Collector Emitter Voltage Gate Emitter Voltage TJ=25℃ IC DC Collector Current ICM Repetitive Peak Collector Current TC=25℃, TJmax=175℃ TC=85℃, TJmax=175℃ tp=1ms Ptot Power Dissipation Per IGBT TC=25℃, TJmax=175℃ Values Unit 1200 V ±20 55 40 A 80 208 W Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values Unit 1200 V 40 A 80 250 A2S MacMic Science & Technology Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website:www.macmicst.com 1 MMG40H120XB6TC IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=1.6mA VCE(sat) Collector Emitter Saturation Voltage IC=40A, VGE=15V, TJ=25℃ IC=40A, VGE=15V, TJ=125℃ IC=40A, VGE=15V, TJ=150℃ ICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25℃ VCE=1200V, VGE=0V, TJ=150℃ IGES Gate Leakage Current VCE=0V,VGE=±15V, TJ=25℃ Rgint Integrated Gate Resistor Qg Gate Charge VCE=600V, IC=40A , VGE=15V Cies Input Capacitance Cres Reverse Transfer Capacitance VCE=25V, VGE=0V, f =1MHz TJ=25℃ td(on) Turn on Delay Time tr Rise Time VCC=600V,IC=40A RG =20Ω, VGE=±15V, Inductive Load TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃ TJ=150℃ TJ=25℃ td(off) Turn off Delay Time tf Fall Time VCC=600V,IC=40A RG =20Ω, VGE=±15V, Inductive Load TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃ TJ=150℃ Eon Turn on Energy Eoff Turn off Energy VCC=600V,IC=40A RG =20Ω, VGE=±15V, Inductive Load TJ=125℃ TJ=150℃ TJ=125℃ TJ=150℃ ISC Short Circuit Current tpsc≤10µS , VGE=15V TJ=150℃,VCC=600V RthJC Junction to Case Thermal Resistance (Per IGBT) Diode-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions IF=40A , VGE=0V, TJ=25℃ VF Forward Voltage IF=40A , VGE=0V, TJ=125℃ IF=40A , VGE=0V, TJ=150℃ trr Reverse Recovery Time IRRM Max. Reverse Recovery Current QRR Reverse Recovery Charge Erec Reverse Recovery Energy IF=40A , VR=600V dIF/dt=-1000A/μs TJ =150℃ RthJCD Junction to Case Thermal Resistance ( Per Diode) Min. 5.0 -400 Typ. 5.8 1.95 2.3 2.4 0 0.22 2.8 110 20 25 30 40 45 45 180 220 240 170 200 220 5.4 5.8 3.35 3.55 145 Max. Unit 6.5 2.35 V 1 mA 10 400 nA Ω nC nF pF ns ns ns ns ns ns ns ns ns ns ns ns mJ mJ mJ mJ A 0.72 K /W Min. Typ. Max. Unit 1.85 2.3 1.65 V 1.60 350 ns 45 A 6.5 µC 2 mJ 1.05 K /W 2 MMG40H120XB6TC Diode-RECTIFIER ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current Per Diode IFRMS R.M.S. Forward Current Per Diode TC=80℃ IRMS R.M.S. Current at rectifier output Non Repetitive Surge IFSM Forward Current TJ=45℃, t=10ms, 50Hz TJ=45℃, t=8.3ms, 60Hz I2t TJ=45℃, t=10ms, 50Hz TJ=45℃, t=8.3ms, 60Hz Diode-RECTIFIER ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VF Forward Voltage IF=40A , TJ =25℃ IF=40A , TJ =150℃ IR Reverse Leakage Current VR=1600V, TJ=25℃ VR=1600V, TJ=150℃ RthJCD Junction to Case Thermal Resistance ( Per Diode) IGBT-Brake chopper ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃, TJmax=175℃ TC=100℃, TJmax=175℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT TC=25℃, TJmax=175℃ Values Unit 1600 V 50 75 80 A 480 527 1152 1152 A2S Min. Typ. Max. Unit 1.06 1.2 V 1.00 V 50 µA 1 mA 0.8 K /W Values Unit 1200 V ±20 39 25 A 50 166 W Diode-Brake chopper ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Revers.


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