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IGBT. MMG40W120XB6TN Datasheet

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IGBT. MMG40W120XB6TN Datasheet






MMG40W120XB6TN IGBT. Datasheet pdf. Equivalent




MMG40W120XB6TN IGBT. Datasheet pdf. Equivalent





Part

MMG40W120XB6TN

Description

IGBT



Feature


February 2017 PRODUCT FEATURES □ High level of integration □ IGBT3 CHIP(Tre nch+Field Stop technology) □ Low satu ration voltage and positive temperature coefficient □ Fast switching and sho rt tail current □ Free wheeling diode s with fast and soft reverse recovery Industry standard package with insul ated copper base plate and soldering pi ns for PCB mounting □ Temperat.
Manufacture

MacMic

Datasheet
Download MMG40W120XB6TN Datasheet


MacMic MMG40W120XB6TN

MMG40W120XB6TN; ure sense included APPLICATIONS □ AC m otor control □ Motion/servo control Inverter and power supplies MMG40W1 20XB6TN Version 1 1200V 40A PIM Modul e RoHS Compliant Rectifier+Brake+Inver ter IGBT-inverter ABSOLUTE MAXIMUM RA TINGS(T C =25°C unless otherwise speci fied) Symbol Parameter/Test Condition s VCES VGES Collector Emitter Voltage Gate Emitter Voltage TJ.


MacMic MMG40W120XB6TN

=25℃ IC DC Collector Current ICM R epetitive Peak Collector Current TC=25 ℃, TJmax=150℃ TC=80℃, TJmax=150 tp=1ms Ptot Power Dissipation Per I GBT TC=25℃, TJmax=150℃ Values Un it 1200 V ±20 55 40 A 80 195 W Diode-inverter ABSOLUTE MAXIMUM RATIN GS (T C =25°C unless otherwise specifi ed) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage .


MacMic MMG40W120XB6TN

TJ=25℃ IF(AV) Average Forward Curren t IFRM Repetitive Peak Forward Curren t tp=1ms I2t TJ =125℃, t=10ms, VR= 0V Values Unit 1200 V 40 A 80 300 A2S MacMic Science & Technology Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Prov ince, P. R .of China Tel.:+86-519-851 63708 Fax:+86-519-85162291 Post Code 213022 Website:www.macmicst..

Part

MMG40W120XB6TN

Description

IGBT



Feature


February 2017 PRODUCT FEATURES □ High level of integration □ IGBT3 CHIP(Tre nch+Field Stop technology) □ Low satu ration voltage and positive temperature coefficient □ Fast switching and sho rt tail current □ Free wheeling diode s with fast and soft reverse recovery Industry standard package with insul ated copper base plate and soldering pi ns for PCB mounting □ Temperat.
Manufacture

MacMic

Datasheet
Download MMG40W120XB6TN Datasheet




 MMG40W120XB6TN
February 2017
PRODUCT FEATURES
High level of integration
IGBT3 CHIP(Trench+Field Stop technology)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
MMG40W120XB6TN
Version 1
1200V 40A PIM Module
RoHS Compliant
Rectifier+Brake+Inverter
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25, TJmax=150
TC=80, TJmax=150
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=150
Values
Unit
1200
V
±20
55
40
A
80
195
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
1200
V
40
A
80
300
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
3




 MMG40W120XB6TN
MMG40W120XB6TN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=1.5mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=40A, VGE=15V, TJ=25
IC=40A, VGE=15V, TJ=125
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=40A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=40A
RG =27,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=40A
RG =27,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=40A
RG =27,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125,VCC=900V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-400
Typ.
5.8
1.8
2.05
6
0.33
2.5
0.11
90
90
30
50
420
520
70
90
4.1
5.8
3.6
4.2
160
Max. Unit
6.5
2.3
V
100 µA
10 mA
400 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.64 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=40A , VGE=0V, TJ=25
IF=40A , VGE=0V, TJ=125
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=40A , VR=600V
dIF/dt=-1000A/μs
TJ =125
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.75
2.3
V
1.75
360
ns
46
A
8.4
µC
3.1
mJ
1.0 K /W
4




 MMG40W120XB6TN
MMG40W120XB6TN
Diode-RECTIFIER
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current Per Diode
IFRMS R.M.S. Forward Current Per Diode
TC=80
IRMS
R.M.S. Current at rectifier output
Non Repetitive Surge
IFSM
Forward Current
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
I2t
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
Values
Unit
1600
V
50
75
80
A
480
527
1152
1152
A2S
Diode-RECTIFIER
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=40A , TJ =25
IF=40A , TJ =150
IR
Reverse Leakage Current
VR=1600V, TJ=25
VR=1600V, TJ=150
RthJCD Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.06
1.00
Max.
1.2
50
1
0.8
Unit
V
V
µA
mA
K /W
IGBT-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25, TJmax=150
TC=80, TJmax=150
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=150
Values
Unit
1200
V
±20
25
15
A
30
105
W
Diode-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ=125, t=10ms, VR=0V
Values
Unit
1200
V
15
A
30
60
A2S
5






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