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PIM. MMG50H060XB6EN Datasheet

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PIM. MMG50H060XB6EN Datasheet






MMG50H060XB6EN PIM. Datasheet pdf. Equivalent




MMG50H060XB6EN PIM. Datasheet pdf. Equivalent





Part

MMG50H060XB6EN

Description

PIM

Manufacture

MacMic

Datasheet
Download MMG50H060XB6EN Datasheet


MacMic MMG50H060XB6EN

MMG50H060XB6EN; January 2017 MMG50H060XB6EN Preliminar y 600V 50A PIM Module RoHS Compliant PRODUCT FEATURES □ High level of inte gration □ 600V IGBT3 CHIP(Trench+Fiel d Stop technology) □ Low saturation v oltage and positive temperature coeffic ient □ Fast switching and short tail current □ Free wheeling diodes with f ast and soft reverse recovery □ Indus try standard package with insu.


MacMic MMG50H060XB6EN

lated copper base plate and soldering pi ns for PCB mounting □ Temperature sen se included APPLICATIONS □ AC motor c ontrol □ Motion/servo control □ Inv erter and power supplies Rectifier+Bra ke+Inverter IGBT-inverter ABSOLUTE MA XIMUM RATINGS(T C =25°C unless otherwi se specified) Symbol Parameter/Test C onditions VCES VGES Collector Emitter Voltage Gate Emitter Volta.


MacMic MMG50H060XB6EN

ge TJ=25℃ IC DC Collector Current ICM Repetitive Peak Collector Current TC=25℃, TJmax=175℃ TC=80℃, TJmax =175℃ tp=1ms Ptot Power Dissipation Per IGBT TC=25℃, TJmax=175℃ Valu es Unit 600 V ±20 60 50 A 100 1 90 W Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise s pecified) Symbol Parameter/Test Condi tions VRRM Repetitive Reverse Vol.



Part

MMG50H060XB6EN

Description

PIM

Manufacture

MacMic

Datasheet
Download MMG50H060XB6EN Datasheet




 MMG50H060XB6EN
January 2017
MMG50H060XB6EN
Preliminary
600V 50A PIM Module
RoHS Compliant
PRODUCT FEATURES
High level of integration
600V IGBT3 CHIP(Trench+Field Stop technology)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Rectifier+Brake+Inverter
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25, TJmax=175
TC=80, TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
600
V
±20
60
50
A
100
190
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
600
V
50
A
100
330
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com





 MMG50H060XB6EN
MMG50H060XB6EN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=0.8mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=50A, VGE=15V, TJ=25
IC=50A, VGE=15V, TJ=125
IC=50A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=600V, VGE=0V, TJ=25
VCE=600V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=300V, IC=50A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=300V,IC=50A
RG =43,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=300V,IC=50A
RG =43,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=300V,IC=50A
RG =43,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc6µS , VGE=15V
TJ=150,VCC=360V
RthJC Junction to Case Thermal Resistance (Per IGBT)
Min.
4.9
-200
Typ.
5.8
1.45
1.6
1.7
0
500
3.1
95
100
100
60
70
600
700
40
60
2.3
2.75
2.9
1.75
2.1
2.15
250
Max. Unit
6.5
1.9
V
1
mA
10 mA
200 nA
nC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
A
0.8 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=50A , VGE=0V, TJ=25
VF
Forward Voltage
IF=50A , VGE=0V, TJ=125
IF=50A , VGE=0V, TJ=150
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=50A , VR=300V
dIF/dt=-900A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.55 1.95
1.50
V
1.45
36
A
3.55
µC
0.6
mJ
1.2 K /W
2





 MMG50H060XB6EN
MMG50H060XB6EN
Diode-RECTIFIER
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current Per Diode
IFRMS R.M.S. Forward Current Per Diode
TC=80
IRMS
R.M.S. Current at rectifier output
Non Repetitive Surge
IFSM
Forward Current
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
I2t
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
Values
Unit
1600
V
50
75
80
A
480
527
1152
1152
A2S
Diode-RECTIFIER
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=50A , TJ =25
IF=50A , TJ =150
IR
Reverse Leakage Current
VR=1600V, TJ=25
VR=1600V, TJ=150
RthJCD Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.1
1.05
Max.
1.25
50
1
0.8
Unit
V
V
µA
mA
K /W
IGBT-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25, TJmax=175
TC=80, TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
600
V
±20
27
20
A
40
83
W
Diode-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ=125, t=10ms, VR=0V
Values
Unit
600
V
20
A
40
49
A2S
3



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