Document
June 2015
MMG50H120X6HN
Version 01
1200V 50A Six-Pack Module RoHS Compliant
PRODUCT FEATURES
□ IGBT CHIP(T4 Fast Trench+Field Stop technology) □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Industry standard package with insulated copper base plate and soldering pins for PCB mounting
□ Temperature sense included
APPLICATIONS
□ AC motor control □ Motion/servo control □ Inverter and power supplies
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25℃
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25℃ TC=95℃
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25℃
IF(AV)
Average Forward Current
TC=25℃
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125℃, t=10ms, VR=0V
Values
1200 ±20 75 50 100 300
Unit
V
A W
Values
1200 50 100 680
Unit
V
A A2S
MacMic Science & Technology Co., Ltd.
Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website:www.macmicst.com
1
MMG50H120X6HN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th)
VCE(sat)
ICES
IGES Rgint Qg Cies Cres
Gate Emitter Threshold Voltage Collector Emitter Saturation Voltage
Collector Leakage Current
Gate Leakage Current Integrated Gate Resistor Gate Charge Input Capacitance Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=2mA IC=50A, VGE=15V, TJ=25℃ IC=50A, VGE=15V, TJ=125℃ VCE=1200V, VGE=0V, TJ=25℃ VCE=1200V, VGE=0V, TJ=125℃ VCE=0V,VGE=±15V, TJ=25℃
VCE=600V, IC=50A , VGE=15V
VCE=25V, VGE=0V, f =1MHz
TJ=25℃
VCC=600V,IC=50A RG =15Ω, VGE=±15V, Inductive Load
TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃
TJ=150℃
TJ=25℃
VCC=600V,IC=50A RG =15Ω, VGE=±15V, Inductive Load
TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃
TJ=150℃
VCC=600V,IC=50A RG =15Ω, VGE=±15V, Inductive Load
TJ=125℃ TJ=150℃ TJ=125℃ TJ=150℃
tpsc≤10µS , VGE=15V TJ=125℃,VCC=600V
RthJC
Junction to Case Thermal Resistance ( Per IGBT)
Min.
5.4
-400
Typ.
6.0 2.1 2.5
4 0.23 2.8 160 60 70 80 40 50 55 280 320 360 40 60 70
5 5.5 3 3.3
Max. Unit
6.5 2.5 V
1 mA 10 mA 400 nA
Ω µC nF pF ns ns ns ns ns ns ns ns ns ns ns ns mJ mJ mJ mJ
200
A
0.5 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=50A , VGE=0V, TJ=25℃ IF=50A , VGE=0V, TJ=125℃
trr IRRM QRR
Reverse Recovery Time Max. Reverse Recovery Current Reverse Recovery Charge
IF=50A , VR=600V dIF/dt=-1300A/μs TJ =125℃
Erec
Reverse Recovery Energy
RthJCD
Junction to Case Thermal Resistance ( Per Diode)
Min.
Typ.
1.65 1.65 330 55 8.5 3.2
Max. Unit
2.15 V
ns A µC mJ 0.78 K /W
2
NTC CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
R25
Resistance
TC =25℃
B25/50
R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax TJop Tstg Visol CTI
Max. Junction Temperature Operating Temperature Storage Temperature Isolation Breakdown Voltage Comparative Tracking Index
AC, 50Hz(R.M.S), t=1minute
Md
Mounting Torque
Recommended(M5)
Weight
MMG50H120X6HN
Min. Typ. Max. Unit
5
KΩ
3375
K
Values
175 -40~150 -40~125
3000 >225 2.5~5 180
Unit
℃
V Nm
g
IC(A)
100 25℃
80
125℃
60
40
20
0
0
1
2
3
4
5
VCE(V)
Figure 1. Typical Output Characteristics IGBT-inverter
IC(A)
100 80 60 40
Vge=17V Vge=15V Vge=13V Vge=10V Vge=8V
20
TJ=125℃
0
0
1
2
3
4
5
VCE(V) Figure 2. Typical Output Characteristics
IGBT-inverter
IC(A)
100
VCE=20V 80
60
40
20
25℃
125℃
0
6 7 8 9 10 11 12 13
VGE(V)
Figure 3. Typical Transfer Characteristics IGBT-inverter
Eon Eoff (mJ)
15
VCE=600V
12
IC=50A VGE=±15V
TJ=125℃
9
6
3
Eon Eoff
0 0 10 20 30 40 50 Rg(Ω)
Figure 4. Switching Energy vs Gate Resistor IGBT-inverter
3
Eon Eoff (mJ)
16
VCE=600V
Rg=15Ω
12
VGE=±15V
TJ=125℃
8
Eon
Eoff
4
0 0 20 40 60 80 100 IC(A)
Figure 5. Switching Energy vs Collector Current IGBT-inverter
IC (A)
MMG50H120X6HN
120
100
80
Rg=15Ω
60
VTJG=E1=2±51℃5V
40
20
0 0 200 400 600 800 1000 1200 1400 VCE(V)
Figure 6. Reverse Biased Safe Operating Area IGBT-inverter
IF(A)
100 25℃
80
125℃
60
40
20
0 0.0 0.5 1.0 1.5 2.0 .