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MMG50H120X6HN Dataheets PDF



Part Number MMG50H120X6HN
Manufacturers MacMic
Logo MacMic
Description IGBT
Datasheet MMG50H120X6HN DatasheetMMG50H120X6HN Datasheet (PDF)

June 2015 MMG50H120X6HN Version 01 1200V 50A Six-Pack Module RoHS Compliant PRODUCT FEATURES □ IGBT CHIP(T4 Fast Trench+Field Stop technology) □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Industry standard package with insulated copper base plate and soldering pins for PCB mounting □ Temperature sense included APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter.

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June 2015 MMG50H120X6HN Version 01 1200V 50A Six-Pack Module RoHS Compliant PRODUCT FEATURES □ IGBT CHIP(T4 Fast Trench+Field Stop technology) □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Industry standard package with insulated copper base plate and soldering pins for PCB mounting □ Temperature sense included APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃ TC=95℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current TC=25℃ IFRM Repetitive Peak Forward Current tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values 1200 ±20 75 50 100 300 Unit V A W Values 1200 50 100 680 Unit V A A2S MacMic Science & Technology Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website:www.macmicst.com 1 MMG50H120X6HN IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VGE(th) VCE(sat) ICES IGES Rgint Qg Cies Cres Gate Emitter Threshold Voltage Collector Emitter Saturation Voltage Collector Leakage Current Gate Leakage Current Integrated Gate Resistor Gate Charge Input Capacitance Reverse Transfer Capacitance td(on) Turn on Delay Time tr Rise Time td(off) Turn off Delay Time tf Fall Time Eon Turn on Energy Eoff Turn off Energy ISC Short Circuit Current VCE=VGE, IC=2mA IC=50A, VGE=15V, TJ=25℃ IC=50A, VGE=15V, TJ=125℃ VCE=1200V, VGE=0V, TJ=25℃ VCE=1200V, VGE=0V, TJ=125℃ VCE=0V,VGE=±15V, TJ=25℃ VCE=600V, IC=50A , VGE=15V VCE=25V, VGE=0V, f =1MHz TJ=25℃ VCC=600V,IC=50A RG =15Ω, VGE=±15V, Inductive Load TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃ TJ=150℃ TJ=25℃ VCC=600V,IC=50A RG =15Ω, VGE=±15V, Inductive Load TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃ TJ=150℃ VCC=600V,IC=50A RG =15Ω, VGE=±15V, Inductive Load TJ=125℃ TJ=150℃ TJ=125℃ TJ=150℃ tpsc≤10µS , VGE=15V TJ=125℃,VCC=600V RthJC Junction to Case Thermal Resistance ( Per IGBT) Min. 5.4 -400 Typ. 6.0 2.1 2.5 4 0.23 2.8 160 60 70 80 40 50 55 280 320 360 40 60 70 5 5.5 3 3.3 Max. Unit 6.5 2.5 V 1 mA 10 mA 400 nA Ω µC nF pF ns ns ns ns ns ns ns ns ns ns ns ns mJ mJ mJ mJ 200 A 0.5 K /W Diode-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VF Forward Voltage IF=50A , VGE=0V, TJ=25℃ IF=50A , VGE=0V, TJ=125℃ trr IRRM QRR Reverse Recovery Time Max. Reverse Recovery Current Reverse Recovery Charge IF=50A , VR=600V dIF/dt=-1300A/μs TJ =125℃ Erec Reverse Recovery Energy RthJCD Junction to Case Thermal Resistance ( Per Diode) Min. Typ. 1.65 1.65 330 55 8.5 3.2 Max. Unit 2.15 V ns A µC mJ 0.78 K /W 2 NTC CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions R25 Resistance TC =25℃ B25/50 R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))] MODULE CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions TJmax TJop Tstg Visol CTI Max. Junction Temperature Operating Temperature Storage Temperature Isolation Breakdown Voltage Comparative Tracking Index AC, 50Hz(R.M.S), t=1minute Md Mounting Torque Recommended(M5) Weight MMG50H120X6HN Min. Typ. Max. Unit 5 KΩ 3375 K Values 175 -40~150 -40~125 3000 >225 2.5~5 180 Unit ℃ V Nm g IC(A) 100 25℃ 80 125℃ 60 40 20 0 0 1 2 3 4 5 VCE(V) Figure 1. Typical Output Characteristics IGBT-inverter IC(A) 100 80 60 40 Vge=17V Vge=15V Vge=13V Vge=10V Vge=8V 20 TJ=125℃ 0 0 1 2 3 4 5 VCE(V) Figure 2. Typical Output Characteristics IGBT-inverter IC(A) 100 VCE=20V 80 60 40 20 25℃ 125℃ 0 6 7 8 9 10 11 12 13 VGE(V) Figure 3. Typical Transfer Characteristics IGBT-inverter Eon Eoff (mJ) 15 VCE=600V 12 IC=50A VGE=±15V TJ=125℃ 9 6 3 Eon Eoff 0 0 10 20 30 40 50 Rg(Ω) Figure 4. Switching Energy vs Gate Resistor IGBT-inverter 3 Eon Eoff (mJ) 16 VCE=600V Rg=15Ω 12 VGE=±15V TJ=125℃ 8 Eon Eoff 4 0 0 20 40 60 80 100 IC(A) Figure 5. Switching Energy vs Collector Current IGBT-inverter IC (A) MMG50H120X6HN 120 100 80 Rg=15Ω 60 VTJG=E1=2±51℃5V 40 20 0 0 200 400 600 800 1000 1200 1400 VCE(V) Figure 6. Reverse Biased Safe Operating Area IGBT-inverter IF(A) 100 25℃ 80 125℃ 60 40 20 0 0.0 0.5 1.0 1.5 2.0 .


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