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IGBT. MMG50HB120H6HN Datasheet

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IGBT. MMG50HB120H6HN Datasheet






MMG50HB120H6HN IGBT. Datasheet pdf. Equivalent




MMG50HB120H6HN IGBT. Datasheet pdf. Equivalent





Part

MMG50HB120H6HN

Description

IGBT



Feature


May 2015 MMG50HB120H6HN Version 01 12 00V 50A Four-Pack Module RoHS Compliant PRODUCT FEATURES □ High short circu it capability,self limiting short circu it current □ IGBT CHIP(T4 Fast Trench +Field Stop technology) □ VCE(sat) wi th positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low .
Manufacture

MacMic

Datasheet
Download MMG50HB120H6HN Datasheet


MacMic MMG50HB120H6HN

MMG50HB120H6HN; switching losses □ TJmax =175°C APPL ICATIONS □ High frequency switching a pplication □ Medical applications □ Motion/servo control □ UPS systems IGBT-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VC ES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Co llector Current TC=25℃ TC=95℃ .


MacMic MMG50HB120H6HN

ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGB T Diode-inverter ABSOLUTE MAXIMUM RAT INGS (T C =25°C unless otherwise speci fied) Symbol Parameter/Test Condition s VRRM Repetitive Reverse Voltage TJ =25℃ IF(AV) Average Forward Current TC=25℃ IFRM Repetitive Peak Forwa rd Current tp=1ms I2t TJ =125℃, t= 10ms, VR=0V Values 1200 .


MacMic MMG50HB120H6HN

±20 75 50 100 300 Unit V A W Values 1 200 50 100 680 Unit V A A2S MacMic Sc ience & Technology Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Chang zhou City, Jiangsu Province, P. R .of C hina Tel.:+86-519-85163708 Fax:+86- 519-85162291 Post Code:213022 Website :www.macmicst.com 1 MMG50HB120H6HN IGBT-inverter ELECTRICAL CHARACTERISTI CS (T C =25°C unless otherwis.

Part

MMG50HB120H6HN

Description

IGBT



Feature


May 2015 MMG50HB120H6HN Version 01 12 00V 50A Four-Pack Module RoHS Compliant PRODUCT FEATURES □ High short circu it capability,self limiting short circu it current □ IGBT CHIP(T4 Fast Trench +Field Stop technology) □ VCE(sat) wi th positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low .
Manufacture

MacMic

Datasheet
Download MMG50HB120H6HN Datasheet




 MMG50HB120H6HN
May 2015
MMG50HB120H6HN
Version 01
1200V 50A Four-Pack Module
RoHS Compliant
PRODUCT FEATURES
High short circuit capability,self limiting short circuit current
IGBT CHIP(T4 Fast Trench+Field Stop technology)
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
TJmax =175°C
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=95
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=25
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
1200
±20
75
50
100
300
Unit
V
A
W
Values
1200
50
100
680
Unit
V
A
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1




 MMG50HB120H6HN
MMG50HB120H6HN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th)
VCE(sat)
ICES
IGES
Rgint
Qg
Cies
Cres
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=2mA
IC=50A, VGE=15V, TJ=25
IC=50A, VGE=15V, TJ=125
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
VCE=600V, IC=50A , VGE=15V
VCE=25V, VGE=0V, f =1MHz
TJ=25
VCC=600V,IC=50A
RG =15,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
VCC=600V,IC=50A
RG =15,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
VCC=600V,IC=50A
RG =15,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
tpsc10µS , VGE=15V
TJ=125,VCC=600V
RthJC
Junction to Case Thermal Resistance Per IGBT
Min.
5.4
-400
Typ.
6.0
2.1
2.5
4
0.23
2.8
160
60
70
80
40
50
55
280
320
360
40
60
70
5
5.5
3
3.3
Max. Unit
6.5
2.5 V
1 mA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
200
A
0.5 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=50A , VGE=0V, TJ=25
IF=50A , VGE=0V, TJ=125
trr
IRRM
QRR
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=50A , VR=600V
dIF/dt=-1300A/μs
TJ =125
Erec
Reverse Recovery Energy
RthJCD
Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.65
1.65
330
55
8.5
3.2
Max. Unit
2.15
V
ns
A
µC
mJ
0.78 K /W
2




 MMG50HB120H6HN
MMG50HB120H6HN
NTC CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
R25
Resistance
TC =25
B25/50
R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Torque
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
to heatsink
to terminal
AC, 50Hz(R.M.S), t=1minute
RecommendedM6
RecommendedM5
Weight
Min. Typ. Max. Unit
5
K
3375
K
Values
175
-40~150
-40~125
3000
3~5
2.5~5
200
Unit
V
Nm
Nm
g
100
25
80
125
60
40
20
0
0.0
1.0
2.0
3.0
4.0
VCEV
Figure 1. Typical Output Characteristics
IGBT-inverter
100
80
60
40
Vge=17V
Vge=15V
Vge=13V
Vge=10V
Vge=8V
20
TJ=125
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics
IGBT-inverter
100
VCE=20V
80
60
25
125
40
20
0
6 7 8 9 10 11 12
VGEV
Figure 3. Typical Transfer Characteristics
IGBT-inverter
15
VCE=600V
12
IC=50A
VGE=±15V
TJ=125
9
6
3
Eon
Eoff
0
0 10 20 30 40 50
Rg
Figure 4. Switching Energy vs Gate Resistor
IGBT-inverter
3






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