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PIM. MMG50HD120XB6T4N Datasheet

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PIM. MMG50HD120XB6T4N Datasheet






MMG50HD120XB6T4N PIM. Datasheet pdf. Equivalent




MMG50HD120XB6T4N PIM. Datasheet pdf. Equivalent





Part

MMG50HD120XB6T4N

Description

PIM

Manufacture

MacMic

Datasheet
Download MMG50HD120XB6T4N Datasheet


MacMic MMG50HD120XB6T4N

MMG50HD120XB6T4N; January 2016 MMG50HD120XB6T4N Version 0 1200V 50A PIM Module RoHS Compliant PRODUCT FEATURES □ High level of int egration □ CHIP(Trench+Field Stop IGB T4 and EmCon4 diode) □ Low saturation voltage and positive temperature coeff icient □ Fast switching and short tai l current □ Free wheeling diodes with fast and soft reverse recovery □ Ind ustry standard package with in.


MacMic MMG50HD120XB6T4N

sulated copper base plate and soldering pins for PCB mounting □ Temperature s ense included APPLICATIONS □ AC motor control □ Motion/servo control □ I nverter and power supplies Rectifier+B rake+Inverter IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless other wise specified) Symbol Parameter/Test Conditions VCES VGES Collector Emitt er Voltage Gate Emitter Vol.


MacMic MMG50HD120XB6T4N

tage TJ=25℃ IC DC Collector Current TC=25℃ TC=95℃ ICM Repetitive Pe ak Collector Current Ptot Power Dissi pation Per IGBT tp=1ms Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Pa rameter/Test Conditions VRRM Repetiti ve Reverse Voltage TJ=25℃ IF(AV) IF RM I2t Average Forward Current Repetit ive Peak Forward Current T.



Part

MMG50HD120XB6T4N

Description

PIM

Manufacture

MacMic

Datasheet
Download MMG50HD120XB6T4N Datasheet




 MMG50HD120XB6T4N
January 2016
MMG50HD120XB6T4N
Version 0
1200V 50A PIM Module
RoHS Compliant
PRODUCT FEATURES
High level of integration
CHIP(Trench+Field Stop IGBT4 and EmCon4 diode)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Rectifier+Brake+Inverter
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
TC=25
TC=95
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
tp=1ms
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
IFRM
I2t
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
TJ =125, t=10ms, VR=0V
Values
1200
±20
73
50
100
280
Unit
V
A
W
Values
1200
50
100
560
Unit
V
A
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1





 MMG50HD120XB6T4N
MMG50HD120XB6T4N
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th)
VCE(sat)
Gate Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
ICES
IGES
Rgint
Qg
Cies
Cres
td(on)
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=1.7mA
IC=50A, VGE=15V, TJ=25
IC=50A, VGE=15V, TJ=125
IC=50A, VGE=15V, TJ=150
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
VCE=0V,VGE=±15V, TJ=25
VCE=600V, IC=50A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
TJ=25
VCC=600V,IC=50A
RG =15,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
VCC=600V,IC=50A
RG =15,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
VCC=600V,IC=50A
RG =15,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
tpsc10µS , VGE=15V
TJ=125,VCC=900V
RthJC
Junction to Case Thermal Resistance (Per IGBT)
Min.
5.2
-200
Typ.
5.8
1.85
2.15
2.25
4
0.38
2.8
100
160
170
170
30
40
40
330
430
450
80
150
170
7.7
8.4
4.3
4.8
Max. Unit
6.4
2.25 V
1 mA
10 mA
200 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
180
A
0.54 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=50A , VGE=0V, TJ =25
IF=50A , VGE=0V, TJ =125
IRRM
QRR
Erec
RthJCD
Max. Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Energy
IF=50A , VGE=0V, TJ=150
IF=50A , VR=600V
dIF/dt=-1400A/μs
TJ =150
Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.7
1.65
1.65
63
10
3.7
Max. Unit
2.15
V
A
µC
mJ
0.81 K /W
2





 MMG50HD120XB6T4N
MMG50HD120XB6T4N
Diode-RECTIFIER
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current Per Diode
IFRMS
R.M.S. Forward Current Per Diode
TC=80
IRMS
R.M.S. Current at rectifier output
Non Repetitive Surge
IFSM
Forward Current
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
I2t
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
Values
1600
50
75
80
480
527
1152
1152
Unit
V
A
A2S
Diode-RECTIFIER
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=50A , TJ =25
IF=50A , TJ =150
IR
RthJCD
Reverse Leakage Current
VR=1600V, TJ=25
VR=1600V, TJ=150
Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.1
1.05
Max. Unit
1.25 V
V
50 µA
1 mA
0.8 K /W
IGBT-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
TC=25
TC=100
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
tp=1ms
Diode-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
IF(AV)
Repetitive Reverse Voltage
Average Forward Current
TJ=25
TC=25
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ=125, t=10ms, VR=0V
Values
1200
±20
39
25
50
160
Unit
V
A
W
Values
1200
15
30
48
Unit
V
A
A2S
3



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