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IGBT. MMG50J120U Datasheet

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IGBT. MMG50J120U Datasheet






MMG50J120U IGBT. Datasheet pdf. Equivalent




MMG50J120U IGBT. Datasheet pdf. Equivalent





Part

MMG50J120U

Description

IGBT



Feature


April 2015 PRODUCT FEATURES □ High Sho rt Circuit Capability □ Free wheeling diodes with fast and soft reverse reco very □ VCE(sat) with positive tempera ture coefficient □ Ultra Low Loss,Hig h Ruggedness □ Popular SOT-227 Packag e Version 01 MMG50J120U 1200V 50A IGB T Module RoHS Compliant APPLICATIONS Invertor Convertor □ Welder SMPS a nd UPS □ Induction Heating IGBT.
Manufacture

MacMic

Datasheet
Download MMG50J120U Datasheet


MacMic MMG50J120U

MMG50J120U; -inverter ABSOLUTE MAXIMUM RATINGS Sym bol Parameter/Test Conditions VCES C ollector Emitter Voltage TJ=25℃ VGE S Gate Emitter Voltage IC DC Collect or Current TC=25℃ TC=80℃ ICM Rep etitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT T C =25°C unless otherwise specified Valu es Unit 1200 ±20 V 80 50 A 100 416 W Diode-inverter .


MacMic MMG50J120U

ABSOLUTE MAXIMUM RATINGS Symbol Parame ter/Test Conditions T C =25°C unless otherwise specified Values Unit VRRM Repetitive Reverse Voltage TJ=25℃ 1200 V IF(AV) IFRM I2t Average Forw ard Current Repetitive Peak Forward Cur rent TC=25℃ tp=1ms TJ =125℃, t=10m s, VR=0V 50 100 A 880 A2S MacMic Science & Technology Co., Ltd. Add:# 18, Hua Shan Zhong Lu, New .


MacMic MMG50J120U

District, Changzhou City, Jiangsu Provin ce, P. R .of China 1 Tel.:+86-519-8 5163708 Fax:+86-519-85162291 Post Cod e:213022 Website:www.macmicst.com MMG50J120U IGBT-inverter ELECTRICAL CH ARACTERISTICS Symbol Parameter/Test C onditions T C =25°C unless otherwise specified Min. Typ. Max. Unit VGE(th) VCE(sat) Gate Emitter Threshold Voltag e Collector Emitter Saturat.

Part

MMG50J120U

Description

IGBT



Feature


April 2015 PRODUCT FEATURES □ High Sho rt Circuit Capability □ Free wheeling diodes with fast and soft reverse reco very □ VCE(sat) with positive tempera ture coefficient □ Ultra Low Loss,Hig h Ruggedness □ Popular SOT-227 Packag e Version 01 MMG50J120U 1200V 50A IGB T Module RoHS Compliant APPLICATIONS Invertor Convertor □ Welder SMPS a nd UPS □ Induction Heating IGBT.
Manufacture

MacMic

Datasheet
Download MMG50J120U Datasheet




 MMG50J120U
April 2015
PRODUCT FEATURES
High Short Circuit Capability
Free wheeling diodes with fast and soft reverse recovery
VCE(sat) with positive temperature coefficient
Ultra Low Loss,High Ruggedness
Popular SOT-227 Package
Version 01
MMG50J120U
1200V 50A IGBT Module
RoHS Compliant
APPLICATIONS
Invertor Convertor
Welder SMPS and UPS
Induction Heating
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=80
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
1200
±20
V
80
50
A
100
416
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25
1200
V
IF(AV)
IFRM
I2t
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
TJ =125, t=10ms, VR=0V
50
100
A
880
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




 MMG50J120U
MMG50J120U
IGBT-inverter
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VGE(th)
VCE(sat)
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Qg
Cies
Cres
td(on)
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=2mA
IC=50A, VGE=15V, TJ=25
IC=50A, VGE=15V, TJ=125
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
VCE=600V, IC=50A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=50A
RG =15,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=50A
RG =15,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=50A
RG =15,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc10µS , VGE=15V
TJ=125,VCC=900V
5.0 6.2
1.8
2.0
-400
10
0.6
4.29
200
230
260
60
60
480
550
60
75
4.5
6
3.8
5.5
270
7.0
2.4 V
1 mA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.3 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VF
trr
IRRM
QRR
Erec
RthJCD
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=50A , VGE=0V, TJ=25
IF=50A , VGE=0V, TJ=125
IF=50A , VR=600V
dIF/dt=-1200A/μs
TJ =125
Reverse Recovery Energy
Junction to Case Thermal Resistance Per Diode
1.85 2.4
1.80
V
115
ns
68
A
7.6
µC
2.7
mJ
0.6 K /W
2




 MMG50J120U
MMG50J120U
MODULE CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
150
-40~125
-40~125
3000
V
Torque
to heatsink
to terminal
RecommendedM4
RecommendedM4
0.7~1.1
Nm
0.7~1.1
Nm
Weight
26.5
g
100
25
75
125
50
25
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VCEV
Figure 1. Typical Output Characteristics
IGBT-inverter
100
VCE=20V
75
50
25
25
125
0
7 8 9 10 11 12 13
VGEV
Figure 3. Typical Transfer characteristics
IGBT-inverter
100
75
50
25
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
TJ=125
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics
IGBT-inverter
15
VCE=600V
12
IC=50A
VGE=±15V
TJ=125
9
6
3
Eon
Eoff
0
0 10 20 30 40 50
Rg
Figure 4. Switching Energy vs Gate Resistor
IGBT-inverter
3






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