MMG50S120B6HN

April 2015 MMG50S120B6HN 1200V 50A IGBT Module Version 01 RoHS Compliant PRODUCT FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP(T4 Fast Trench+Field Stop technology) □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses □ TJmax =175°C APPLICATIONS □ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems IGBT-inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES IC Gate Emitter Voltage DC Collector Current TC=25℃ TC=95℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT T C =25°C unless otherwise specified Values Unit 1200 V ±20 75 50 A 100 330 W Diode-inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions T C =25°C unless otherwise specified Values Unit VRRM Repetitive Reverse Voltage TJ=25℃ 1200 V IF(AV) IFRM Average Forward Current Repetitive Peak Forward Current TC=25℃ tp=1ms 50 A 100 I2t TJ =125℃, t=10ms, VR=0V 680 A2S MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China 1 Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com MMG50S120B6HN IGBT-inverter ELECTRICAL CHARACTERISTICS Symbol Parameter/Test Conditions T C =2...