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IGBT. MMG50S120B6TN Datasheet

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IGBT. MMG50S120B6TN Datasheet






MMG50S120B6TN IGBT. Datasheet pdf. Equivalent




MMG50S120B6TN IGBT. Datasheet pdf. Equivalent





Part

MMG50S120B6TN

Description

IGBT



Feature


April 2015 MMG50S120B6TN 1200V 50A IGB T Module Version 01 RoHS Compliant P RODUCT FEATURES □ IGBT3 CHIP(Trench+F ield Stop technology) □ High short ci rcuit capability,self limiting short ci rcuit current □ VCE(sat) with positiv e temperature coefficient □ Fast swit ching and short tail current □ Free w heeling diodes with fast and soft rever se recovery □ Low switching .
Manufacture

MacMic

Datasheet
Download MMG50S120B6TN Datasheet


MacMic MMG50S120B6TN

MMG50S120B6TN; losses APPLICATIONS □ High frequency switching application □ Medical appli cations □ Motion/servo control □ UP S systems IGBT-inverter ABSOLUTE MAXI MUM RATINGS Symbol Parameter/Test Con ditions VCES Collector Emitter Voltag e TJ=25℃ VGES IC Gate Emitter Volt age DC Collector Current TC=25℃ TC=8 0℃ ICM Repetitive Peak Collector Cu rrent tp=1ms Ptot Power Dissi.


MacMic MMG50S120B6TN

pation Per IGBT T C =25°C unless other wise specified Values Unit 1200 V ± 20 75 50 A 100 260 W Diode-inver ter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions T C =25°C u nless otherwise specified Values Unit VRRM Repetitive Reverse Voltage TJ= 25℃ 1200 V IF(AV) IFRM Average Fo rward Current Repetitive Peak Forward C urrent TC=25℃ tp=1ms .


MacMic MMG50S120B6TN

50 A 100 I2t TJ =125℃, t=10ms, VR=0V 680 A2S MacMic Science & Technology Co., Ltd. Add:#18, Hua Shan Zhong L u, New District, Changzhou City, Jiangs u Province, P. R .of China 1 Tel.:+ 86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website:www.macmic st.com MMG50S120B6TN IGBT-inverter EL ECTRICAL CHARACTERISTICS T C =25°C un less otherwise specified Symbo.

Part

MMG50S120B6TN

Description

IGBT



Feature


April 2015 MMG50S120B6TN 1200V 50A IGB T Module Version 01 RoHS Compliant P RODUCT FEATURES □ IGBT3 CHIP(Trench+F ield Stop technology) □ High short ci rcuit capability,self limiting short ci rcuit current □ VCE(sat) with positiv e temperature coefficient □ Fast swit ching and short tail current □ Free w heeling diodes with fast and soft rever se recovery □ Low switching .
Manufacture

MacMic

Datasheet
Download MMG50S120B6TN Datasheet




 MMG50S120B6TN
April 2015
MMG50S120B6TN
1200V 50A IGBT Module
Version 01
RoHS Compliant
PRODUCT FEATURES
IGBT3 CHIP(Trench+Field Stop technology)
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
IC
Gate Emitter Voltage
DC Collector Current
TC=25
TC=80
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
1200
V
±20
75
50
A
100
260
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25
1200
V
IF(AV)
IFRM
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
50
A
100
I2t
TJ =125, t=10ms, VR=0V
680
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




 MMG50S120B6TN
MMG50S120B6TN
IGBT-inverter
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VGE(th)
Gate Emitter Threshold Voltage
VCE=VGE, IC=2mA
5.0 5.8 6.5
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
IC=50A, VGE=15V, TJ=25
1.7 2.15 V
IC=50A, VGE=15V, TJ=125
1.9
VCE=1200V, VGE=0V, TJ=25
1 mA
VCE=1200V, VGE=0V, TJ=125
10 mA
VCE=0V,VGE=±15V, TJ=25
-400
400 nA
4
Qg
Gate Charge
VCE=600V, IC=50A , VGE=±15V
0.47
µC
Cies
Cres
td(on)
tr
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=50A
RG =18,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
3.6
nF
160
pF
90
ns
90
ns
30
ns
50
ns
td(off)
tf
Eon
Eoff
ISC
Turn off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Short Circuit Current
VCC=600V,IC=50A
RG =18,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=50A
RG =18,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc10µS , VGE=15V
TJ=125,VCC=900V
420
ns
520
ns
70
ns
90
ns
4.9
mJ
6.6
mJ
4
mJ
4.9
mJ
200
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.48 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VF
Forward Voltage
IF=50A , VGE=0V, TJ=25
IF=50A , VGE=0V, TJ=125
1.65 2.15
V
1.65
trr
IRRM
QRR
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=50A , VR=600V
dIF/dt=-1200A/μs
TJ =125
360
ns
50
A
9.5
µC
Erec
Reverse Recovery Energy
4.4
mJ
RthJCD
Junction to Case Thermal Resistance Per Diode
0.78 K /W
2




 MMG50S120B6TN
MMG50S120B6TN
MODULE CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Values
Unit
TJmax
Max. Junction Temperature
150
TJop
Operating Temperature
-40~125
Tstg
Storage Temperature
-40~125
Visol
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
3000
V
CTI
Comparative Tracking Index
200
to heatsink
Torque
to terminal
RecommendedM6
RecommendedM5
3~5
Nm
2.5~5
Nm
Weight
160
g
100
25
80
125
60
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VCEV
Figure 1. Typical Output Characteristics
IGBT-inverter
100
VCE=20V
80
60
40
25
20
125
0
6 7 8 9 10 11 12
VGEV
Figure 3. Typical Transfer characteristics
IGBT-inverter
100
80
60
40
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
TJ=125
20
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics
IGBT-inverter
12
VCE=600V
10 IC=50A
VGE=±15V
8
TJ=125
6
4
2
Eon
Eoff
0
0
10
20
30
40
Rg
Figure 4. Switching Energy vs Gate Resistor
IGBT-inverter
3






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