MMG50S120B6UC

December 2018 PRODUCT FEATURES □ IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery MMG50S120B6UC Version 01 1200V 50A IGBT Module RoHS Compliant APPLICATIONS □ Welding Machine □ Power Supplies □ Others IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES VGES Collector Emitter Voltage Gate Emitter Voltage TJ=25℃ IC DC Collector Current ICM Repetitive Peak Collector Current TC=25℃,TJmax=175℃ TC=95℃,TJmax=175℃ tp=1ms Ptot Power Dissipation Per IGBT TC=25℃,TJmax=175℃ Values Unit 1200 V ±20 75 50 A 100 300 W Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values Unit 1200 V 50 A 100 250 A2S MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China 1 Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website ：www.macmicst.com MMG50S120B6UC IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=2mA VCE(sat) Collector Emit...