MMG50S170B6EN

April 2015 PRODUCT FEATURES □ IGBT3 CHIP(1700V Trench+Field Stop technology) □ Low turn-off losses, short tail current □ VCE(sat) with positive temperature coefficient □ DIODE CHIP(1700V EMCON 3 technology) □ Free wheeling diodes with fast and soft reverse recovery MMG50S170B6EN Version 01 1700V 50A IGBT Module RoHS Compliant APPLICATIONS □ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems IGBT-inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃ TC=95℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT T C =25°C unless otherwise specified Values Unit 1700 V ±20 75 50 A 100 410 W Diode-inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions T C =25°C unless otherwise specified Values Unit VRRM Repetitive Reverse Voltage TJ=25℃ 1700 V IF(AV) IFRM Average Forward Current Repetitive Peak Forward Current TC=25℃ tp=1ms 50 A 100 I2t TJ =125℃, t=10ms, VR=0V 420 A2S MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P. R .of China 1 Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com MMG50S170B6EN IGBT-inverter ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min. Typ. Max. Unit VGE(th) Gat...