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IGBT. MMG75H120H6HN Datasheet

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IGBT. MMG75H120H6HN Datasheet






MMG75H120H6HN IGBT. Datasheet pdf. Equivalent




MMG75H120H6HN IGBT. Datasheet pdf. Equivalent





Part

MMG75H120H6HN

Description

IGBT

Manufacture

MacMic

Datasheet
Download MMG75H120H6HN Datasheet


MacMic MMG75H120H6HN

MMG75H120H6HN; May 2015 MMG75H120H6HN Version 01 120 0V 75A Four-Pack Module RoHS Compliant PRODUCT FEATURES □ High short circui t capability,self limiting short circui t current □ IGBT CHIP(T4 Fast Trench+ Field Stop technology) □ VCE(sat) wit h positive temperature coefficient □ Fast switching and short tail current Free wheeling diodes with fast and s oft reverse recovery □ Low s.


MacMic MMG75H120H6HN

witching losses □ TJmax =175°C APPLI CATIONS □ High frequency switching ap plication □ Medical applications □ Motion/servo control □ UPS systems I GBT-inverter ABSOLUTE MAXIMUM RATINGS( T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCE S Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Col lector Current TC=25℃ TC=95℃ I.


MacMic MMG75H120H6HN

CM Repetitive Peak Collector Current t p=1ms Ptot Power Dissipation Per IGBT Diode-inverter ABSOLUTE MAXIMUM RATI NGS (T C =25°C unless otherwise specif ied) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ= 25℃ IF(AV) Average Forward Current TC=25℃ IFRM Repetitive Peak Forwar d Current I2t tp=1ms TJ =125℃, t=10 ms, VR=0V Values 1200 ±2.



Part

MMG75H120H6HN

Description

IGBT

Manufacture

MacMic

Datasheet
Download MMG75H120H6HN Datasheet




 MMG75H120H6HN
May 2015
MMG75H120H6HN
Version 01
1200V 75A Four-Pack Module
RoHS Compliant
PRODUCT FEATURES
High short circuit capability,self limiting short circuit current
IGBT CHIP(T4 Fast Trench+Field Stop technology)
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
TJmax =175°C
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=95
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=25
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ =125, t=10ms, VR=0V
Values
1200
±20
100
75
150
465
Unit
V
A
W
Values
1200
75
150
1150
Unit
V
A
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
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 MMG75H120H6HN
MMG75H120H6HN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th)
VCE(sat)
ICES
IGES
Rgint
Qg
Cies
Cres
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=3mA
IC=75A, VGE=15V, TJ=25
IC=75A, VGE=15V, TJ=125
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
VCE=600V, IC=75A , VGE=15V
VCE=25V, VGE=0V, f =1MHz
TJ=25
VCC=600V,IC=75A
RG =10,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
VCC=600V,IC=75A
RG =10,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
VCC=600V,IC=75A
RG =10,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
tpsc10µS , VGE=15V
TJ=125,VCC=600V
RthJC
Junction to Case Thermal Resistance Per IGBT
Min.
5.4
-400
Typ.
6.0
2.1
2.5
10
0.35
4.4
240
150
160
170
60
65
70
360
400
420
40
60
70
10
11
4.5
4.8
Max. Unit
6.5
2.5 V
1 mA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
300
A
0.32 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=75A , VGE=0V, TJ=25
IF=75A , VGE=0V, TJ=125
trr
IRRM
QRR
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=75A , VR=600V
dIF/dt=-1650A/μs
TJ =125
Erec
Reverse Recovery Energy
RthJCD
Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.65
1.65
450
65
13.5
5.1
Max. Unit
2.15
V
ns
A
µC
mJ
0.6 K /W
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 MMG75H120H6HN
NTC CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
R25
Resistance
TC =25
B25/50
R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
CTI
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
Comparative Tracking Index
AC, 50Hz(R.M.S), t=1minute
Md
Mounting Torque
RecommendedM5
Weight
MMG75H120H6HN
Min. Typ. Max. Unit
5
K
3375
K
Values
175
-40~150
-40~125
3000
>225
2.5~5
200
Unit
V
Nm
g
150
25
125
125
100
75
50
25
0
0.0
1.0
2.0
3.0
4.0
VCEV
Figure 1. Typical Output Characteristics
IGBT-inverter
150
125
100
75
Vge=17V
Vge=15V
Vge=13V
Vge=10V
Vge=8V
50
25
TJ=125
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics
IGBT-inverter
150
125
VCE=20V
100
25
75
125
50
25
0
6 7 8 9 10 11 12
VGEV
Figure 3. Typical Transfer Characteristics
IGBT-inverter
30
VCE=600V
25 IC=75A
VGE=±15V
20
TJ=125
15
Eon
10
Eoff
5
0
0 10 20 30 40 50
Rg
Figure 4. Switching Energy vs Gate Resistor
IGBT-inverter
3



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