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IGBT. MMG75H120X6TC Datasheet

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IGBT. MMG75H120X6TC Datasheet






MMG75H120X6TC IGBT. Datasheet pdf. Equivalent




MMG75H120X6TC IGBT. Datasheet pdf. Equivalent





Part

MMG75H120X6TC

Description

IGBT



Feature


May 2020 MMG75H120X6TC Preliminary 12 00V 75A Six-Pack Module RoHS Compliant PRODUCT FEATURES □ High level of int egration □ IGBT CHIP(Trench+Field Sto p technology) □ Low saturation voltag e and positive temperature coefficient □ Fast switching and short tail curre nt □ Free wheeling diodes with fast a nd soft reverse recovery □ Industry s tandard package with insulated.
Manufacture

MacMic

Datasheet
Download MMG75H120X6TC Datasheet


MacMic MMG75H120X6TC

MMG75H120X6TC; copper base plate and soldering pins fo r PCB mounting □ Temperature sense in cluded APPLICATIONS □ AC motor contr ol □ Motion/servo control □ Inverte r and power supplies IGBT-inverter AB SOLUTE MAXIMUM RATINGS(T C =25°C unles s otherwise specified) Symbol Paramet er/Test Conditions VCES VGES Collecto r Emitter Voltage Gate Emitter Voltage TJ=25℃ IC DC Collector C.


MacMic MMG75H120X6TC

urrent ICM Repetitive Peak Collector C urrent TC=25℃, TJmax=175℃ TC=95℃ , TJmax=175℃ tp=1ms Ptot Power Diss ipation Per IGBT TC=25℃, TJmax=175 Values Unit 1200 V ±20 110 75 A 150 385 W Diode-inverter ABSOLUT E MAXIMUM RATINGS (T C =25°C unless ot herwise specified) Symbol Parameter/T est Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Averag.


MacMic MMG75H120X6TC

e Forward Current IFRM Repetitive Peak Forward Current tp=1ms I2t TJ =125 , t=10ms, VR=0V Values Unit 1200 V 75 A 150 1250 A2S MacMic Science & Technology Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China 1 Tel.:+86-519-85163708 Fax:+86-5 19-85162291 Post Code:213022 Website :www.macmicst.com MMG75H120.

Part

MMG75H120X6TC

Description

IGBT



Feature


May 2020 MMG75H120X6TC Preliminary 12 00V 75A Six-Pack Module RoHS Compliant PRODUCT FEATURES □ High level of int egration □ IGBT CHIP(Trench+Field Sto p technology) □ Low saturation voltag e and positive temperature coefficient □ Fast switching and short tail curre nt □ Free wheeling diodes with fast a nd soft reverse recovery □ Industry s tandard package with insulated.
Manufacture

MacMic

Datasheet
Download MMG75H120X6TC Datasheet




 MMG75H120X6TC
May 2020
MMG75H120X6TC
Preliminary
1200V 75A Six-Pack Module
RoHS Compliant
PRODUCT FEATURES
High level of integration
IGBT CHIP(Trench+Field Stop technology)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25, TJmax=175
TC=95, TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1200
V
±20
110
75
A
150
385
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
1200
V
75
A
150
1250
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




 MMG75H120X6TC
MMG75H120X6TC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=3mA
VCE(sat)
Collector - Emitter
Saturation Voltage
IC=75A, VGE=15V, TJ=25
IC=75A, VGE=15V, TJ=125
IC=75A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=75A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=75A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=75A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=75A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125,VCC=800V
RthJC Junction to Case Thermal Resistance (Per IGBT)
Min.
5.0
-400
Typ.
5.8
1.8
2.1
2.15
5
0.4
5
220
110
130
135
44
48
48
320
370
380
100
170
200
12.6
13.9
6.2
6.8
310
Max. Unit
6.5
2.25
V
1
mA
10
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.39 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=75A , VGE=0V, TJ =25
VF
Forward Voltage
IF=75A , VGE=0V, TJ =125
IF=75A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=75A , VR=600V
dIF/dt=-1600A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
2
Min. Typ. Max. Unit
1.75 2.15
1.55
V
1.50
560
ns
98
A
23
µC
8.6
mJ
0.6 K /W




 MMG75H120X6TC
MMG75H120X6TC
NTC CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
R25
Resistance
TC =25
B25/50 R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
Min. Typ. Max. Unit
5
K
3375
K
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
Md
Mounting Torque
RecommendedM5
Weight
Values
Unit
175
-40~150
-40~125
3000
V
>200
2.5~5
Nm
180
g
150
25
125
150
100
75
50
25
VGE=15V
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT-inverter
3
150
Vge=17V
125
Vge=15V
Vge=13V
100
Vge=11V
75
Vge=9V
50
25
TJ=150
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT-inverter






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